2SK3875-01
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
200407
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching, Low on-resistance
Low driving power, Avalanche-proof
No secondary breakdown
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Non-Repetitive
Maximum Avalanche current
Repetitive
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AS
I
AR
E
AS
E
AR
dV
DS
/dt
dV/dt
P
D
T
ch
T
stg
Ratings
900
900
13
±52
±30
13
6.5
1006
35.5
40
5
355
2.50
+150
-55 to +150
Unit
V
V
A
A
V
A
A
mJ
mJ
Remarks
V
GS
=-30V
Equivalent circuit schematic
Drain(D)
Note *1
Gate(G)
Source(S)
Note *2
Note *3
Note *1:Tch
<
150°C
=
Note *2:StartingTch=25°C,I
AS
=5.2A,L=67.5mH,
V
CC
=100V,R
G
=50Ω
E
AS
limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:I
F
< -I
D
, -di/dt=50A/µs,V
CC
< BV
DSS
, Tch< 150°C
=
=
=
kV/µs V
DS
< 900V
=
kV/µs Note *4
Tc=25°C
W
Ta=25°C
°C
°C
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
I
D
= 250µA
V
GS
=0V
µA
I
D
= 250
V
DS
=V
GS
V
DS
=900V V
GS
=0V
T
ch
=25°C
T
ch
=125°C
V
DS
=720V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=6.5A V
GS
=10V
I
D
=6.5A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=600V I
D
=6.5A
V
GS
=10V
R
GS
=10
Ω
V
CC
=450V
I
D
=13A
V
GS
=10V
I
F
=13A V
GS
=0V T
ch
=25°C
I
F
=13A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Test Conditions
channel to case
channel to ambient
Min.
900
3.0
Typ.
Max. Units
5.0
25
250
100
1.00
V
V
µA
nA
Ω
S
pF
0.79
6.0
12
1750
2625
220
330
13
19.5
20
30
12
18
60
90
15
22.5
46
69
14
21
17
26
1.10
1.50
4.5
25
ns
nC
V
µs
µC
Thermal characteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Min.
Typ.
Max.
0.352
50.0
Units
°C/W
°C/W
1
2SK3875-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
FUJI POWER MOSFET
400
20
Typical Output Characteristics
ID=f(VDS):80
µ
s pulse test,Tch=25
°
C
20V
350
16
300
6.5V
250
12
PD [W]
200
ID [A]
8
4
VGS=5.5V
0
0
25
50
75
100
125
150
0
4
8
12
16
20
150
100
50
0
Tc [
°
C]
VDS [V]
100
Typical Transfer Characteristic
ID=f(VGS):80
µ
s pulse test,VDS=25V,Tch=25
°
C
100
Typical Transconductance
gfs=f(ID):80
µ
s pulse test,VDS=25V,Tch=25
°
C
10
10
ID[A]
1
1
0.1
0.1
0.1
0
1
2
3
4
5
6
7
8
9
10
gfs [S]
1
10
100
VGS[V]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
µ
s pulse test,Tch=25
°
C
VGS=5.5V
1.4
6.0V
3.00
2.75
2.50
2.25
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6.5A,VGS=10V
1.2
RDS(on) [
Ω
]
2.00
RDS(on) [
Ω
]
6.5V
1.0
8.0V
10V
20V
1.75
1.50
1.25
1.00
max.
0.8
0.75
0.50
0.6
0.25
0.00
0
5
10
15
20
-50
-25
0
25
50
typ.
75
100
125
150
ID [A]
Tch [
°
C]
2
2SK3875-01
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
µ
A
FUJI POWER MOSFET
7.0
6.5
6.0
5.5
5.0
14
Typical Gate Charge Characteristics
VGS=f(Qg):ID=13A,Tch=25
°
C
12
Vcc= 180V
450V
720V
max.
10
VGS(th) [V]
4.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
min.
VGS [V]
4.0
8
6
4
2
0
0
10
20
30
40
50
60
70
Tch [
°
C]
Qg [nC]
10
4
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
100
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
µ
s pulse test,Tch=25
°
C
Ciss
10
3
10
C [pF]
10
2
Coss
IF [A]
1
3
10
1
Crss
10
0
10
-1
10
0
10
1
10
2
10
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
Ω
1200
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=100V
I
AS
=5.2A
1000
tf
10
2
td(off)
800
I
AS
=7.8A
600
td(on)
10
1
EAV [mJ]
t [ns]
400
tr
200
I
AS
=13A
10
0
0
-1
10
10
0
10
1
10
2
0
25
50
75
100
125
150
ID [A]
starting Tch [
°
C]
3
2SK3875-01
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch):Vcc=100V
FUJI POWER MOSFET
16
14
12
Non-Repetitive
(Single Pulse)
10
I
AV
[A]
8
Repetitive
6
4
2
0
0
25
50
75
100
125
150
175
200
starting Tch [
°
C]
10
2
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
°
C,Vcc=100V
Avalanche Current I
AV
[A]
Single Pulse
1
10
10
0
10
-1
10
-8
10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
(Maximum Transient Thermal Impedance)
(Zth(ch-c)=f(t):D=0)
10
1
10
0
(Zth(ch-c) [°C/W])
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/fdt/scd/
4
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