Si4888DY

Vishay Siliconix

N-Channel Reduced Q

g

, Fast Switching MOSFET

PRODUCT SUMMARY

V

DS

(V)

30

R

DS(on)

(Ω)

0.007 at V

GS

= 10 V

0.010 at V

GS

= 4.5 V

I

D

(A)

16

13

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

®

Power MOSFET

• High-Efficiency PWM Optimized

• 100 % R

g

Tested

SO-8

S

G

1

2

3

4

Top View

8

7

6

5

D

G

D

S

Ordering Information:

Si4888DY-T1-E3 (Lead (Pb)-free)

Si4888DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

T

A

= 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

J

= 150 °C)

a

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

a

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

T

A

= 25 °C

T

A

= 70 °C

T

A

= 25 °C

T

A

= 70 °C

Symbol

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

J

, T

stg

3.0

3.5

2.2

- 55 to 150

16

13

± 50

1.40

1.6

1.0

W

°C

10 s

30

± 20

11

8

A

Steady State

Unit

V

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient (MOSFET)

a

Maximum Junction-to-Foot (Drain)

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

t

≤

10 s

Steady State

Symbol

R

thJA

R

thJF

Typical

29

65

15

Maximum

35

80

18

°C/W

Unit

Document Number: 71336

S09-0221-Rev. F, 09-Feb-09

www.vishay.com

1

Si4888DY

Vishay Siliconix

SPECIFICATIONS

T

J

= 25 °C, unless otherwise noted

Parameter

Static

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

a

Forward Transconductance

a

Diode Forward Voltage

a

Dynamic

b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

rr

I

F

= 3 A, dI/dt = 100 A/µs

V

DD

= 15 V, R

L

= 15

Ω

I

D

≅

1 A, V

GEN

= 10 V, R

g

= 6

Ω

0.5

V

DS

= 15 V, V

GS

= 5.0 V, I

D

= 16 A

16.3

4

5.9

1.5

14

10

44

20

40

2.6

20

15

70

30

70

ns

Ω

24

nC

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

fs

V

SD

V

DS

= V

GS

, I

D

= 250 µA

V

DS

= 0 V, V

GS

= ± 20 V

V

DS

= 30 V, V

GS

= 0 V

V

DS

= 30 V, V

GS

= 0 V, T

J

= 70 °C

V

DS

≥

5 V, V

GS

= 10 V

V

GS

= 10 V, I

D

= 16 A

V

GS

= 4.5 V, I

D

= 13 A

V

DS

= 15 V, I

D

= 16 A

I

S

= 3 A, V

GS

= 0 V

40

0.0058

0.008

38

0.74

1.1

0.007

0.010

0.80

1.6

± 100

1

5

V

nA

µA

A

Ω

S

V

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Notes:

a. Pulse test; pulse width

≤

300 µs, duty cycle

≤

2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

50

V

GS

= 10 V thru 3 V

40

I

D

- Drain Current (A)

I

D

- Drain Current (A)

40

50

30

20

T

C

= 125 °C

10

25 °C

10

2V

1V

0

2

4

6

8

10

- 55 °C

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0

V

DS

- Drain-to-Source Voltage (V)

V

GS

- Gate-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

www.vishay.com

2

Document Number: 71336

S09-0221-Rev. F, 09-Feb-09

Si4888DY

Vishay Siliconix

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

0.020

2500

R

DS(on)

- On-Resistance (Ω)

0.016

C - Capacitance (pF)

2000

C

iss

1500

0.012

V

GS

= 4.5 V

0.008

V

GS

= 10 V

0.004

1000

C

oss

500

C

rss

0.000

0

10

20

30

40

50

0

5

10

15

20

25

30

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

10

V

DS

= 15 V

I

D

= 16 A

8

R

DS(on)

- On-Resistance

(Normalized)

1.8

V

GS

= 10 V

I

D

= 16 A

Capacitance

V

GS

- Gate-to-Source Voltage (V)

1.6

1.4

6

1.2

4

1.0

2

0.8

0

7

14

21

28

35

0.6

- 50

- 25

0

25

50

75

100

125

150

Q

g

- Total Gate Charge (nC)

T

J

- Junction Temperature (°C)

Gate Charge

50

0.05

On-Resistance vs. Junction Temperature

T

J

= 150 °C

10

R

DS(on)

- On-Resistance (Ω)

0.04

I

S

- Source Current (A)

0.03

0.02

I

D

= 16 A

0.01

T

J

= 25 °C

1

0

0.2

0.4

0.6

0.8

1.0

1.2

0.00

0

2

4

6

8

10

V

SD

- Source-to-Drain Voltage (V)

V

GS

- Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Document Number: 71336

S09-0221-Rev. F, 09-Feb-09

www.vishay.com

3

Si4888DY

Vishay Siliconix

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

0.4

I

D

= 250

µA

0.2

V

GS(th)

Variance (V)

80

100

0.0

Power (W)

60

- 0.2

40

- 0.4

20

- 0.6

- 0.8

- 50

0

- 25

0

25

50

75

100

125

150

0.001

0.01

0.1

Time (s)

1

10

T

J

- Temperature (°C)

Threshold Voltage

2

1

Normalized Effective Transient

Thermal Impedance

Duty Cycle = 0.5

Single Pulse Power

0.2

Notes:

0.1

0.05

P

DM

t

1

t

2

1. Duty Cycle, D =

t

1

t

2

0.02

Single Pulse

0.01

10

- 4

10

- 3

10

- 2

10

- 1

1

Square Wave Pulse Duration (s)

2. Per Unit Base = R

thJA

= 68 °C/W

3. T

JM

-

T

A

= P

DM

Z

thJA(t)

4. Surface Mounted

10

100

600

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1

Normalized Effective Transient

Thermal Impedance

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

0.01

10

-4

10

-3

10

-2

10

-1

Square Wave Pulse Duration (s)

1

10

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?71336.

www.vishay.com

4

Document Number: 71336

S09-0221-Rev. F, 09-Feb-09

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of

typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding

statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a

particular product with the properties described in the product specification is suitable for use in a particular application.

Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over

time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.

Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for

such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document

or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 08-Feb-17

1

Document Number: 91000

参数名称	属性值
是否无铅	含铅
厂商名称	Vishay(威世)
零件包装代码	SOT
包装说明	SMALL OUTLINE, R-PDSO-G8
针数	8
Reach Compliance Code	unknown
ECCN代码	EAR99
Is Samacsys	N
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	30 V
最大漏极电流 (Abs) (ID)	11 A
最大漏极电流 (ID)	11 A
最大漏源导通电阻	0.007 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PDSO-G8
JESD-609代码	e0
元件数量	1
端子数量	8
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	240
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	3.5 W
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	30
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

	SI4888DY-T1	SI4888DY-E3	SI4888DY-T1-E3
描述	MOSFET 30V 16A 3.5W	MOSFET 30V 16A 3.5W	MOSFET 30V 16A 3.5W
厂商名称	Vishay(威世)	Vishay(威世)	Vishay(威世)
包装说明	SMALL OUTLINE, R-PDSO-G8	,	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	unknown	compliant	unknown
配置	SINGLE WITH BUILT-IN DIODE	Single	SINGLE WITH BUILT-IN DIODE
最大漏极电流 (Abs) (ID)	11 A	11 A	11 A
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609代码	e0	e3	e3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	3.5 W	3.5 W	3.5 W
表面贴装	YES	YES	YES
端子面层	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)
是否无铅	含铅	-	不含铅
零件包装代码	SOT	-	SOT
针数	8	-	8
ECCN代码	EAR99	-	EAR99
Is Samacsys	N	-	N
最小漏源击穿电压	30 V	-	30 V
最大漏极电流 (ID)	11 A	-	11 A
最大漏源导通电阻	0.007 Ω	-	0.007 Ω
JESD-30 代码	R-PDSO-G8	-	R-PDSO-G8
元件数量	1	-	1
端子数量	8	-	8
封装主体材料	PLASTIC/EPOXY	-	PLASTIC/EPOXY
封装形状	RECTANGULAR	-	RECTANGULAR
封装形式	SMALL OUTLINE	-	SMALL OUTLINE
峰值回流温度（摄氏度）	240	-	260
认证状态	Not Qualified	-	Not Qualified
端子形式	GULL WING	-	GULL WING
端子位置	DUAL	-	DUAL
处于峰值回流温度下的最长时间	30	-	20
晶体管应用	SWITCHING	-	SWITCHING
晶体管元件材料	SILICON	-	SILICON
Base Number Matches	1	-	1
是否Rohs认证	-	符合	符合
湿度敏感等级	-	1	1

SI4888DY-T1

SI4888DY-T1在线购买

SI4888DY-T1概述

SI4888DY-T1规格参数

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