d. Maximum under steady state conditions is 85 °C/W.
S13-2179-Rev. A, 14-Oct-13
Document Number: 62915
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4010DY
www.vishay.com
Vishay Siliconix
Symbol
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= 5 A,
0.73
36
24
16
20
T
C
= 25 °C
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 1.5 V, R
g
= 1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
0.5
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Test Conditions
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= + 20 V, - 16 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, I
D
= 15 A
40
0.0028
0.0035
105
3595
1040
79
51
22.5
8.6
4
30.5
1.25
24
17
25
12
12
10
30
9
2
48
34
50
24
24
20
60
18
5.4
100
1.1
70
48
ns
77
34
nC
pF
0.0034
0.0044
1
Min.
30
14
- 5.5
2.3
± 100
1
10
Typ.
Max.
Unit
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-2179-Rev. A, 14-Oct-13
Document Number: 62915
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4010DY
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 4 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
80
100
Vishay Siliconix
60
V
GS
= 3 V
60
T
C
= 25
°C
40
40
20
V
GS
= 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
20
T
C
= 125
°C
T
C
= - 55
°C
0
0.0
1.0
2.0
3.0
4.0
V
GS
-
Gate-to-Source
Voltage (V)
5.0
Output Characteristics
Transfer Characteristics
0.0045
4000
C
iss
3200
C - Capacitance (pF)
V
GS
= 4.5 V
R
DS(on)
- On-Resistance (Ω)
0.0040
0.0035
2400
C
oss
1600
0.0030
V
GS
= 10 V
0.0025
800
0.0020
0
16
32
48
I
D
- Drain Current (A)
64
80
0
0
C
rss
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
On-Resistance vs. Drain Current
Capacitance
10
I
D
= 10 A
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 15 V
6
V
DS
= 10 V
V
DS
= 20 V
4
R
DS(on)
- On-Resistance
(Normalized)
1.7
I
D
= 15 A
1.5
V
GS
= 10 V
1.3
1.1
V
GS
= 4.5 V
2
0.9
0
0
11
22
33
44
Q
g
- Total
Gate
Charge (nC)
55
0.7
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S13-2179-Rev. A, 14-Oct-13
On-Resistance vs. Junction Temperature
Document Number: 62915
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4010DY
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.015
Vishay Siliconix
I
S
-
Source
Current (A)
T
J
= 150
°C
T
J
= 25 °C
1
R
DS(on)
- On-Resistance (Ω)
10
0.012
I
D
= 15 A
0.009
0.1
0.006
T
J
= 125
°C
0.01
0.003
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0.000
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
200
0.2
160
V
GS(th)
Variance (V)
0
I
D
= 5 mA
- 0.2
Power (W)
150
120
80
- 0.4
I
D
= 250 μA
- 0.6
40
- 0.8
- 50
- 25
0
25
50
75
T
J
- Temperature (°C)
100
125
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
I
DM
Limited
I
D
Limited
1 ms
I
D
- Drain Current (A)
10
Limited by R
DS(on)
*
1
10 ms
100 ms
1
s
10
s
DC
0.1
T
A
= 25 °C
Single
Pulse
0.01
0.01
BVDSS Limited
100
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S13-2179-Rev. A, 14-Oct-13
Document Number: 62915
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4010DY
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
35
Vishay Siliconix
28
I
D
- Drain Current (A)
21
14
7
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
8.0
2.0
6.4
1.6
Power (W)
Power (W)
4.8
1.2
3.2
0.8
1.6
0.4
0.0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
0.0
0
25
50
75
100
T
A
- Ambient Temperature (°C)
125
150
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-2179-Rev. A, 14-Oct-13
Document Number: 62915
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
