RUF015N02
Nch 20V 1.5A Middle Power MOSFET
Datasheet
l
Outline
V
DSS
R
DS(on)
(Max.)
I
D
P
D
20V
180mΩ
±1.5A
0.8W
SOT-323T
TUMT3
l
Inner circuit
l
Features
1) Low on - resistance.
2) Space saving small surface mount package
(TUMT3).
3) Low voltage drive(1.8V drive)
l
Packaging specifications
Packing
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Operating junction and storage temperature range
Symbol
V
DSS
I
D
I
DP*1
V
GSS
P
D*2
P
D*3
T
j
T
stg
Value
20
±1.5
±3.0
±10
0.8
0.75
150
-55 to +150
l
Application
Type
Embossed
Tape
180
8
3000
TL
PS
Unit
V
A
A
V
W
W
℃
℃
Switching
l
Absolute maximum ratings
(T
a
= 25°C ,unless otherwise specified)
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20160112 - Rev.001
RUF015N02
l
Thermal resistance
Datasheet
Parameter
Symbol
R
thJA*2
R
thJA*3
Values
Min.
-
-
Typ.
-
-
Max.
156
167
Unit
℃
/W
℃
/W
Thermal resistance, junction - ambient
l
Electrical characteristics (T
a
= 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Gate resistance
Forward Transfer
Admittance
Symbol
Conditions
Values
Min.
20
-
-
-
0.3
-
-
-
-
-
1.6
Typ.
-
29.0
-
-
-
-1.6
130
170
220
17
-
Max.
-
-
1
10
1.0
-
180
240
310
-
-
Unit
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
Δ
V
(BR)DSS
I
D
= 1mA
ΔT
j
referenced to 25
℃
V
mV/
℃
μA
μA
V
mV/
℃
I
DSS
I
GSS
V
GS(th)
V
DS
= 20V, V
GS
= 0V
V
GS
= 10V, V
DS
= 0V
V
DS
= 10V, I
D
= 1mA
Δ
V
GS(th)
I
D
= 1mA
ΔT
j
referenced to 25
℃
V
GS
= 4.5V, I
D
= 1.5A
R
DS(on)*4
V
GS
= 2.5V, I
D
= 1.5A
V
GS
= 1.8V, I
D
= 0.8A
R
G
|Y
fs
|
*4
f = 1MHz, open drain
V
DS
= 10V, I
D
= 1.5A
mΩ
Ω
S
*1 Pw
≦
10μs , Duty cycle
≦
1%
*2 Mounted on a ceramic board (30x30x0.8mm)
*3 Mounted on a FR4 (25x25x0.8mm)
*4 Pulsed
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
20160112 - Rev.001
RUF015N02
Datasheet
l
Electrical characteristics
(T
a
= 25°C)
Values
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*4
t
r*4
t
d(off)*4
t
f*4
Conditions
Min.
V
GS
= 0V
V
DS
= 10V
f = 1MHz
V
DD
⋍
10V,V
GS
= 4.5V
Unit
Typ.
110
18
15
5
5
20
3
Max.
-
-
-
-
-
ns
-
-
-
-
pF
-
-
-
-
-
I
D
= 1.0A
R
L
⋍
10Ω
R
G
= 10Ω
l
Gate charge characteristics
(T
a
= 25°C)
Values
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
Symbol
Q
g*4
Q
gs*4
Q
gd*4
Conditions
Min.
V
DD
⋍
10V,
I
D
= 1.5A,
V
GS
= 4.5V
-
-
-
Typ.
1.8
0.3
0.3
Max.
2.5
-
-
nC
Unit
l
Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
Values
Parameter
Continuous forward current
Pulse forward current
Forward voltage
Symbol
I
S
I
SP*1
V
SD*4
Conditions
Min.
T
a
= 25
℃
V
GS
= 0V, I
S
= 0.6A
-
-
-
Typ.
-
-
-
Max.
0.6
2.4
1.2
A
A
V
Unit
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
3/11
20160112 - Rev.001
RUF015N02
Datasheet
l
Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
4/11
20160112 - Rev.001
RUF015N02
Datasheet
l
Electrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
Junction Temperature
Fig.8 Typical Transfer Characteristics
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/11
20160112 - Rev.001
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
