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IS42VM16800G-75BLI

产品描述DRAM 128M (8Mx16) 133MHz 1.8V Mobile SDR
产品类别存储   
文件大小274KB,共33页
制造商ISSI(芯成半导体)
官网地址http://www.issi.com/
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IS42VM16800G-75BLI概述

DRAM 128M (8Mx16) 133MHz 1.8V Mobile SDR

IS42VM16800G-75BLI规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
ISSI(芯成半导体)
产品种类
Product Category
DRAM
RoHSDetails
类型
Type
SDRAM Mobile
Data Bus Width16 bit
Organization8 M x 16
封装 / 箱体
Package / Case
BGA-54
Memory Size128 Mbit
Maximum Clock Frequency133 MHz
Access Time6 ns
电源电压-最大
Supply Voltage - Max
1.95 V
电源电压-最小
Supply Voltage - Min
1.7 V
Supply Current - Max45 mA
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 85 C
系列
Packaging
Tray
安装风格
Mounting Style
SMD/SMT
Moisture SensitiveYes
工作电源电压
Operating Supply Voltage
1.8 V
工厂包装数量
Factory Pack Quantity
348
单位重量
Unit Weight
0.003517 oz

文档预览

下载PDF文档
IS42/45SM/RM/VM16800G
2M
x
16Bits
x
4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM16800G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16
bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input
and output voltage levels are compatible with LVCMOS.
Features
JEDEC standard 3.3V, 2.5V, 1.8V power supply
• Auto refresh and self refresh
• All pins are compatible with LVCMOS interface
• 4K refresh cycle / 64ms
• Programmable Burst Length and Burst Type
1, 2, 4, 8 or Full Page for Sequential Burst
4 or 8 for Interleave Burst
• Programmable CAS Latency : 2,3 clocks
• All inputs and outputs referenced to the positive edge of the
system clock
• Data mask function by DQM
• Internal 4 banks operation
• Burst Read Single Write operation
• Special Function Support
PASR(Partial Array Self Refresh)
Auto TCSR(Temperature Compensated Self Refresh)
Programmable Driver Strength Control
Full Strength or 1/2, 1/4, 1/8 of Full Strength
Deep Power Down Mode
• Automatic precharge, includes CONCURRENT Auto Precharge
Mode and controlled Precharge
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information
and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or
malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or
effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to
its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Rev. A | Apr. 2012
www.issi.com
- DRAM@issi.com
1

IS42VM16800G-75BLI相似产品对比

IS42VM16800G-75BLI IS42SM16800G-6BLI IS42RM16800G IS42SM16800G-75BLI-TR IS42SM16800G IS42VM16800G-6BLI
描述 DRAM 128M (8Mx16) 133MHz 1.8V Mobile SDR DRAM 128M 8Mx16 166Mhz 3.3V Mobile SDR DRAM 128M, 2.5v, Mobile SDRAM, 8Mx16 DRAM 128M (8Mx16) 133MHz Mobile SDRAM 3.3v DRAM 128M, 3.3v, Mobile SDRAM, 8Mx16 DRAM 128M (8Mx16) 166MHz 1.8V Mobile SDR
Product Attribute Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value
制造商
Manufacturer
ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体)
产品种类
Product Category
DRAM DRAM DRAM DRAM DRAM DRAM
类型
Type
SDRAM Mobile SDRAM Mobile SDRAM Mobile SDRAM Mobile SDRAM Mobile SDRAM Mobile
Data Bus Width 16 bit 16 bit 16 bit 16 bit 16 bit 16 bit
Organization 8 M x 16 8 M x 16 8 M x 16 8 M x 16 8 M x 16 8 M x 16
Memory Size 128 Mbit 128 Mbit 128 Mbit 128 Mbit 128 Mbit 128 Mbit
电源电压-最大
Supply Voltage - Max
1.95 V 3.6 V 3 V 3.6 V 3.6 V 1.95 V
电源电压-最小
Supply Voltage - Min
1.7 V 2.7 V 2.3 V 2.7 V 2.7 V 1.7 V
系列
Packaging
Tray Tray - Reel - Tray
工作电源电压
Operating Supply Voltage
1.8 V 3.3 V 2.5 V 3.3 V 3.3 V 1.8 V
RoHS Details Details - Details - Details
封装 / 箱体
Package / Case
BGA-54 BGA-54 - BGA-54 - BGA-54
Maximum Clock Frequency 133 MHz 166 MHz - 133 MHz - 166 MHz
Access Time 6 ns 5.5 ns - 6 ns - 5.5 ns
Supply Current - Max 45 mA 50 mA - 45 mA - 50 mA
最小工作温度
Minimum Operating Temperature
- 40 C - 40 C 0 C - 40 C - - 40 C
最大工作温度
Maximum Operating Temperature
+ 85 C + 85 C + 70 C + 85 C - + 85 C
安装风格
Mounting Style
SMD/SMT SMD/SMT - SMD/SMT - SMD/SMT
工厂包装数量
Factory Pack Quantity
348 348 - 2500 - 348
单位重量
Unit Weight
0.003517 oz 0.003517 oz - 0.003517 oz - 0.003517 oz

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