BFP410
Low Noise Silicon Bipolar RF Transistor
•
Low current device suitable e.g. for handhelds
•
For high frequency oscillators e.g. DRO for LNB
•
For ISM band applications like
Automatic Meter Reading, Sensors etc.
•
Transit frequency
f
T
= 25 GHz
•
Pb-free (RoHS compliant) and halogen-free package
with visible leads
•
Qualification report according to AEC-Q101 available
3
4
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFP410
Marking
AKs
1=B
Pin Configuration
2=E
3=C
4=E
-
-
Package
SOT343
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
CEO
Value
Unit
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
4.5
4.1
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
100 °C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
13
13
1.5
40
6
150
150
-55 ... 150
mW
°C
mA
Junction temperature
Storage temperature
1
T
S
is
measured on the emitter lead at the soldering point to the pcb
1
2013-08-16
BFP410
Thermal Resistance
Parameter
Symbol
R
thJS
Value
Unit
Junction - soldering point
1)
335
K/W
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 2 V,
V
BE
= 0
V
CE
= 5 V,
V
BE
= 0 ,
T
A
= 85 °C
(verified by random sampling)
Collector-base cutoff current
V
CB
= 2 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 13 mA,
V
CE
= 2 V, pulse measured
1
For
Symbol
min.
V
(BR)CEO
I
CES
-
-
I
CBO
I
EBO
h
FE
-
-
60
4.5
Values
typ.
5
max.
-
Unit
V
nA
1
2
1
0.001
95
30
50
30
0.6
130
µA
-
the definition of
R
thJS
please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2013-08-16
BFP410
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 20 mA,
V
CE
= 2 V,
f
= 2 GHz
Collector-base capacitance
V
CB
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
I
C
= 2 mA,
V
CE
= 2 V,
f
= 2 GHz,
Z
S
=
Z
Sopt
Power gain, maximum stable
1)
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 2 GHz
Insertion power gain
V
CE
= 2 V,
I
C
= 20 mA,
f
= 2 GHz,
Z
S
=
Z
L
= 50
Ω
Third order intercept point at output
2)
V
CE
= 2 V,
I
C
= 20 mA,
f
= 2 GHz,
Z
S
=
Z
L
= 50
Ω
1dB compression point at output
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 2 GHz
ms = |
S
21 /
S
12 |
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Ω
from 0.1 MHz to 6 GHz
1
G
Unit
max.
-
0.17
GHz
pF
typ.
25
0.09
f
T
C
cb
18
-
C
ce
-
0.35
-
C
eb
-
0.45
-
NF
min
G
ms
-
-
1.2
21.5
-
-
dB
dB
|S
21
|
2
-
18.5
-
IP3
-
23.5
-
dBm
P
-1dB
-
10.5
-
3
2013-08-16
BFP410
Total power dissipation
P
tot
=
ƒ
(T
S
)
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
f
= 1MHz
0.3
180
mW
pF
140
P
tot
100
0.15
80
60
40
0.05
20
0
0
0
0
0.1
C
CB
120
0.2
20
40
60
80
100
120
°C
T
S
160
0.5
1
1.5
2
2.5
3
V
4
V
CB
Transition frequency
f
T
=
ƒ
(I
C
)
f
= 2 GHz
V
CE
= parameter in V
26
GHz
3 to 4V
2V
1V
Power gain
G
ma
,
G
ms
, |S
21
|
2
=
ƒ
(f)
V
CE
= 2 V,
I
C
= 13 mA
45
dB
22
20
18
35
30
f
T
16
14
12
10
8
6
4
2
0
4
8
12
16
20
24
mA
0.5V
G
25
20
15
Gms
|S21|²
Gma
10
5
0
0
32
2
4
6
GHz
10
I
C
f
4
2013-08-16
BFP410
Power gain
G
ma
,
G
ms
=
ƒ
(I
C
)
V
CE
= 2V
f
= parameter in GHz
40
dB
0.15GHz
Power gain
G
ma
,
G
ms
=
ƒ
(V
CE
)
I
C
= 13 mA
f
= parameter in GHz
40
dB
0.15GHz
32
28
24
20
16
12
8
4
0
0
0.45GHz
0.9GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
10GHz
32
28
24
20
16
12
8
4
0
0
0.45GHz
0.9GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
10GHz
G
4
8
12
16
20
24
28
mA
G
36
1
2
3
4
V
6
I
C
V
CE
Noise figure
F
=
ƒ
(I
C
)
V
CE
= 2 V,
Z
S
= Z
Sopt
4.5
dB
Noise figure
F
=
ƒ
(I
C
)
V
CE
= 2 V,
f
= 2 GHz
4
dB
3.5
3
F
min
3
2.5
2
2
1.5
1.5
1
0.5
0
0
f= 10.0 GHz
f= 5.5 GHz
f= 2.4 GHz
f= 1.8 GHz
f= 0.9 GHz
f= 0.45 GHz
4
8
12
16
20
24
mA
30
F
2.5
1
ZS=50Ohm
ZS=ZSopt
0.5
0
0
4
8
12
16
mA
24
I
C
I
C
5
2013-08-16
FPGA/CPLD
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