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UH2B-E3-52T

产品描述Rectifiers 2.0A 100 Volt 25ns 50 Amp IFSM
产品类别半导体    分立半导体   
文件大小85KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
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UH2B-E3-52T概述

Rectifiers 2.0A 100 Volt 25ns 50 Amp IFSM

UH2B-E3-52T规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Vishay(威世)
产品种类
Product Category
Rectifiers
RoHSDetails
封装 / 箱体
Package / Case
SMB
类型
Type
Standard Recovery Rectifiers
系列
Packaging
Cut Tape
系列
Packaging
MouseReel
系列
Packaging
Reel
产品
Product
Rectifiers
NumOfPackaging3
工厂包装数量
Factory Pack Quantity
750
单位重量
Unit Weight
0.006349 oz

文档预览

下载PDF文档
UH2B-E3/HE3, UH2C-E3/HE3
www.vishay.com
Vishay General Semiconductor
Surface Mount Ultrafast Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Oxide planar chip junction
• Ultrafast recovery times for high frequency
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
DO-214AA (SMB)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
at I
F
= 2.0 A
T
J
max.
Package
Diode variations
2.0 A
100 V, 150 V
50 A
25 ns
0.69 V
175 °C
DO-214AA (SMB)
Single die
For use in secondary rectification and freewheeling for
ultrafast switching speeds of AC/AC and DC/DC converters
in high temperature conditions for both consumer and
automotive applications.
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
(1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
Note
(1)
Free air, mounted on recommended copper pad area
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
UH2B
HB
100
2.0
50
-55 to +175
UH2C
HC
150
V
A
A
°C
UNIT
Revision: 01-Jul-15
Document Number: 89108
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
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