Datasheet> 器件分类 > 半导体> 分立半导体> BFR-181-E6327

BFR-181-E6327: 产品描述RF Bipolar Transistors NPN Silicon RF TRANSISTOR; 产品类别半导体分立半导体; 文件大小608KB，共6页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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BFR-181-E6327概述

RF Bipolar Transistors NPN Silicon RF TRANSISTOR

BFR-181-E6327规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Infineon(英飞凌)
产品种类 Product Category	RF Bipolar Transistors
RoHS	Details
Transistor Type	Bipolar
技术 Technology	Si
Transistor Polarity	NPN
最小工作温度 Minimum Operating Temperature	- 65 C
最大工作温度 Maximum Operating Temperature	+ 150 C
Configuration	Single
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	SOT-23
资格 Qualification	AEC-Q100
系列 Packaging	Cut Tape
系列 Packaging	MouseReel
系列 Packaging	Reel
高度 Height	1 mm
长度 Length	2.9 mm
类型 Type	RF Bipolar Small Signal
宽度 Width	1.3 mm
NumOfPackaging	3
Pd-功率耗散 Pd - Power Dissipation	175 mW
工厂包装数量 Factory Pack Quantity	3000
单位重量 Unit Weight	0.000282 oz

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BFR181

Low Noise Silicon Bipolar RF Transistor

•

For low noise, high-gain broadband amplifiers at

collector currents from 0.5 mA to 12 mA

•

= 8 GHz,

min

= 0.9 dB at 900 MHz

•

Pb-free (RoHS compliant) package

•

Qualification report according to AEC-Q101 available

ESD

(Electrostatic

discharge)

sensitive device, observe handling precaution!

Type

BFR181

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

≤

91 °C

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Parameter

Junction - soldering point

Marking

RFs

Pin Configuration

1=B

2=E

Symbol

CEO

CES

CBO

EBO

tot

Stg

Symbol

thJS

3=C

Value

175

150

-65 ... 150

Value

335

Package

SOT23

Unit

Maximum Ratings

= 25 °C, unless otherwise specified

°C

Unit

K/W

S is measured on the collector lead at the soldering point of the pcb

For the definition of

thJS

please refer to Application Note AN077 (Thermal Resistance Calculation)

2014-04-03

BFR-181-E6327相似产品对比

	BFR-181-E6327	BFR 181 E6780
描述	RF Bipolar Transistors NPN Silicon RF TRANSISTOR	RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Product Attribute	Attribute Value	Attribute Value
制造商 Manufacturer	Infineon(英飞凌)	Infineon(英飞凌)
产品种类 Product Category	RF Bipolar Transistors	RF Bipolar Transistors
RoHS	Details	Details
Transistor Type	Bipolar	Bipolar
技术 Technology	Si	Si
Transistor Polarity	NPN	NPN
最小工作温度 Minimum Operating Temperature	- 65 C	- 65 C
最大工作温度 Maximum Operating Temperature	+ 150 C	+ 150 C
Configuration	Single	Single
安装风格 Mounting Style	SMD/SMT	SMD/SMT
封装 / 箱体 Package / Case	SOT-23	SOT-23
高度 Height	1 mm	0.95 mm
长度 Length	2.9 mm	2.9 mm
类型 Type	RF Bipolar Small Signal	RF Bipolar Small Signal
宽度 Width	1.3 mm	1.3 mm
Pd-功率耗散 Pd - Power Dissipation	175 mW	175 mW
工厂包装数量 Factory Pack Quantity	3000	3000
单位重量 Unit Weight	0.000282 oz	0.000282 oz
系列 Packaging	Reel	Reel

BFR-181-E6327

BFR-181-E6327在线购买

BFR-181-E6327概述

BFR-181-E6327规格参数

文档预览

BFR-181-E6327相似产品对比

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