Si4812DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
9
7.3
r
DS(on)
(W)
0.018 @ V
GS
= 10 V
0.028 @ V
GS
= 4.5 V
D
LITTLE FOOTr
Plus
Power MOSFET
D
100% R
g
Tested
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
30
V
SD
(V)
Diode Forward Voltage
0.50 V @ 1.0 A
I
F
(A)
1.4
D
SO-8
S
S
S
G
1
2
3
4
Top View
8
7
6
5
D
D
D
D
Ordering Information:
Si4812DY
Si4812DY-T1 (with Tape and Reel)
Si4812DY—E3 (Lead (Pb)-Free)
Si4812DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
Schottky Diode
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limit
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
J
= 150_C) (MOSFET)
a, b
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
a, b
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
a,
Maximum Power Dissipation (MOSFET)
a b
Symbol
V
DS
V
GS
T
A
= 25_C
T
A
= 70_C
I
D
I
DM
I
S
I
F
I
FM
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
T
J
, T
stg
P
D
10 sec
30
30
"20
9
7.5
50
2.1
1.4
30
2.5
1.6
2.0
1.3
Steady State
Unit
V
6.9
5.6
1.2
0.8
1.4
0.9
1.2
0.8
−55
to 150
_C
W
A
a,
Maximum Power Dissipation (Schottky)
a b
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient (t
v
10 sec)
a
ti t A bi t
)
Device
MOSFET
Schottky
MOSFET
Schottky
Symbol
Typical
40
50
72
85
Maximum
50
60
90
100
Unit
R
thJA
_C/W
Maximum Junction to Ambient (t = steady state)
a
Junction-to-Ambient
Notes
a. Surface Mounted on FR4 Board.
b. t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71775
S-41426—Rev. G, 26-Jul-04
www.vishay.com
1
Si4812DY
Vishay Siliconix
MOSFET + SCHOTTKY SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
(MOSFET + Schottky)
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Schottky Diode Forward Voltage
a
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100_C
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 9 A
V
GS
= 4.5 V, I
D
= 7.3 A
V
DS
= 15 V, I
D
= 9 A
I
S
= 1.0 A, V
GS
= 0 V
I
S
= 1.0 A, V
GS
= 0 V, T
J
= 125_C
20
0.012
0.019
23
0.45
0.33
0.50
0.42
0.018
0.028
W
S
V
0.004
0.7
3.0
1
3
"100
0.100
10
20
A
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.0 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
g
= 6
W
0.2
16
10
35
13
35
V
DS
= 15 V, V
GS
= 5 V, I
D
= 9 A
13
4
5.7
2.4
25
20
50
20
70
ns
W
24
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 71775
S-41426—Rev. G, 26-Jul-04
Si4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
50
Output Characteristics
V
GS
= 10 thru 5 V
50
Transfer Characteristics
40
I
D
−
Drain Current (A)
4V
I
D
−
Drain Current (A)
40
30
30
20
20
T
C
= 125_C
10
10
3V
0
0
1
2
3
4
5
V
DS
−
Drain-to-Source Voltage (V)
25_C
0
0
1
2
3
−55_C
4
5
V
GS
−
Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.10
1800
1500
C
−
Capacitance (pF)
Capacitance
r
DS(on)
−
On-Resistance (
W
)
0.08
C
iss
1200
900
600
C
rss
300
0
C
oss
0.06
0.04
V
GS
= 4.5 V
0.02
V
GS
= 10 V
0.00
0
10
20
30
40
50
I
D
−
Drain Current (A)
0
5
10
15
20
25
30
V
DS
−
Drain-to-Source Voltage (V)
10
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 9 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 9 A
8
1.4
r
DS(on)
−
On-Resiistance
(Normalized)
6
1.2
4
1.0
2
0.8
0
0
5
10
15
20
25
Q
g
−
Total Gate Charge (nC)
0.6
−50
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature (_C)
Document Number: 71775
S-41426—Rev. G, 26-Jul-04
www.vishay.com
3
Si4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
50
Source-Drain Diode Forward Voltage
0.10
On-Resistance vs. Gate-to-Source Voltage
I
S
−
Source Current (A)
10
r
DS(on)
−
On-Resistance (
W
)
T
J
= 150_C
0.08
0.06
I
D
= 9.0 A
1
T
J
= 25_C
0.04
0.02
0.1
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
Reverse Current (Schottky)
20
10
I
R
−
Reverse Current (mA)
40
1
Power (W)
30 V
0.1
0.01
10 V
30
50
Single Pulse Power (MOSFET)
20
0.001
20 V
10
0.0001
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
100
600
T
J
−
Junction Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
Single Pulse
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 72_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
0.01
10
−4
10
−3
10
−2
10
−1
1
10
Square Wave Pulse Duration (sec)
100
600
www.vishay.com
4
Document Number: 71775
S-41426—Rev. G, 26-Jul-04
Si4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85_C/W
t
1
t
2
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
30
Square Wave Pulse Duration (sec)
Document Number: 71775
S-41426—Rev. G, 26-Jul-04
www.vishay.com
5
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