BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
G
Designed for Complementary Use with
BDW84, BDW84A, BDW84B, BDW84C and
BDW84D
125 W at 25°C Case Temperature
15 A Continuous Collector Current
C
B
SOT-93 PACKAGE
(TOP VIEW)
1
G
G
G
2
Minimum h
FE
of 750 at 3 V, 6 A
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BDW83
BDW83A
Collector-base voltage (I
E
= 0)
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
Collector-emitter voltage (I
B
= 0) (see Note 1)
BDW83B
BDW83C
BDW83D
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
B
P
tot
P
tot
½LI
C
T
j
T
stg
T
A
2
SYMBOL
VALUE
45
60
UNIT
V
CBO
80
100
120
45
60
V
V
CEO
80
100
120
5
15
0.5
125
3.5
100
-65 to +150
-65 to +150
-65 to +150
V
V
A
A
W
W
mJ
°C
°C
°C
These values apply when the base-emitter diode is open circuited.
Derate linearly to 150°C case temperature at the rate of 1 W/°C.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 5 mA, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
PRODUCT
INFORMATION
1
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
BDW83
V
(BR)CEO
Collector-emitter
breakdown voltage
BDW83A
I
C
= 30 mA
I
B
= 0
(see Note 5)
BDW83B
BDW83C
BDW83D
V
CE
= 30 V
I
CEO
Collector-emitter
cut-off current
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
V
CE
= 60 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
I
CBO
Collector cut-off
current
V
CB
= 120 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
I
EBO
h
FE
V
BE(on)
V
CE(sat)
V
EC
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
5V
3V
3V
3V
12 mA
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
= 6 A
I
C
= 15 A
I
C
= 6 A
I
C
= 6 A
I
C
= 15 A
I
B
= 0
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
750
100
2.5
2.5
4
3.5
V
V
V
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
MIN
45
60
80
100
120
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
5
5
5
5
5
2
20000
mA
mA
mA
V
TYP
MAX
UNIT
I
B
= 150 mA
I
E
=
15 A
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1
35.7
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
†
I
C
= 10 A
V
BE(off)
= -4.2 V
I
B(on)
= 40 mA
R
L
= 3
Ω
I
B(off)
= -40 mA
t
p
= 20
µs,
dc
≤
2%
MIN
TYP
0.9
7
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
2
INFORMATION
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
70000
TCS140AG
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
2·0
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
1·5
TCS140AH
h
FE
- Typical DC Current Gain
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
10000
1·0
1000
0·5
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
0
0·5
1·0
I
C
- Collector Current - A
10
20
V
CE
= 3 V
t
p
= 300 µs, duty cycle < 2%
100
0·5
1·0
I
C
- Collector Current - A
10
20
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
3·0
V
BE(sat)
- Base-Emitter Saturation Voltage - V
T
C
= -40°C
T
C
= 25°C
2·5 T
C
= 100°C
TCS140AI
2·0
1·5
1·0
0·5
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
1·0
I
C
- Collector Current - A
10
20
0
0·5
Figure 3.
PRODUCT
INFORMATION
3
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
I
C
- Collector Current - A
10
1
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
0.1
1
10
100
1000
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
Figure 5.
PRODUCT
4
INFORMATION
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
ø
4,1
4,0
15,2
14,7
1,37
1,17
3,95
4,15
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
1,30
1,10
2
3
0,78
0,50
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
MDXXAW
PRODUCT
5
INFORMATION
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.
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