Bipolar Transistors - Pre-Biased SS SC88 BR XSTR DUAL 50V
| 参数名称 | 属性值 |
| Brand Name | ON Semiconductor |
| 是否无铅 | 不含铅 |
| 厂商名称 | ON Semiconductor(安森美) |
| 包装说明 | SMALL OUTLINE, R-PDSO-G6 |
| 制造商包装代码 | 419B-02 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| Factory Lead Time | 8 weeks |
| Is Samacsys | N |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO 4.7 |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 80 |
| JESD-30 代码 | R-PDSO-G6 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 2 |
| 端子数量 | 6 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | NPN AND PNP |
| 最大功率耗散 (Abs) | 0.385 W |
| 参考标准 | AEC-Q101 |
| 表面贴装 | YES |
| 端子面层 | Tin (Sn) |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| NSVMUN5314DW1T3G | NSBC114YPDP6T5G | MUN5314DW1T1G | |
|---|---|---|---|
| 描述 | Bipolar Transistors - Pre-Biased SS SC88 BR XSTR DUAL 50V | Bipolar Transistors - Pre-Biased COMP NBRT/PBRT TR SOT-963 | Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP |
| Brand Name | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| 是否无铅 | 不含铅 | 不含铅 | 不含铅 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G6 | SMALL OUTLINE, R-PDSO-F6 | SMALL OUTLINE, R-PDSO-G6 |
| 制造商包装代码 | 419B-02 | 527AD | 419B-02 |
| Reach Compliance Code | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| Factory Lead Time | 8 weeks | 1 week | 1 week |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO 4.7 | BUILT IN BIAS RESISTOR RATIO IS 4.7 | BUILT-IN BIAS RESISTOR RATIO 4.7 |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | 50 V | 50 V |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 80 | 80 | 80 |
| JESD-30 代码 | R-PDSO-G6 | R-PDSO-F6 | R-PDSO-G6 |
| JESD-609代码 | e3 | e3 | e3 |
| 湿度敏感等级 | 1 | 1 | 1 |
| 元件数量 | 2 | 2 | 2 |
| 端子数量 | 6 | 6 | 6 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | 260 |
| 极性/信道类型 | NPN AND PNP | NPN AND PNP | NPN AND PNP |
| 最大功率耗散 (Abs) | 0.385 W | 0.408 W | 0.15 W |
| 表面贴装 | YES | YES | YES |
| 端子面层 | Tin (Sn) | Tin (Sn) | Tin (Sn) |
| 端子形式 | GULL WING | FLAT | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | 40 |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 |
| 厂商名称 | ON Semiconductor(安森美) | - | ON Semiconductor(安森美) |
| Is Samacsys | N | - | N |
| 针数 | - | 6 | 6 |
| 最高工作温度 | - | 150 °C | 150 °C |
| 认证状态 | - | Not Qualified | Not Qualified |
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