This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse) Note1
Pch
Note2
Tch
Tstg
Ratings
17
±10
0.4
1
3
150
–45 to +150
Unit
V
V
A
A
W
°C
°C
Rev.3.00, Feb.14.2005, page 1 of 4
2SK2596
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Input capacitance
Output capacitance
Output Power
Drain Efficiency
Symbol
I
DSS
I
GSS
V
GS(off)
Ciss
Coss
Pout
ηD
Min.
—
—
0.4
—
—
30.2
45
Typ
—
—
—
22
10.5
31.46
55
Max.
10
±5.0
1.1
—
—
—
—
Unit
µA
µA
V
pF
pF
dBm
%
Test Conditions
V
DS
= 12 V, V
GS
= 0
V
GS
= ±10 V, V
DS
= 0
I
D
= 2 mA, V
DS
= 12 V
V
GS
= 5 V, V
DS
= 0, f = 1 MHz
V
DS
= 12 V, V
GS
= 0, f = 1 MHz
V
DS
= 12 V, f = 836.5 MHz
Pin = 18 dBm
V
DS
= 12 V, Pout = 30.2 dBm
f = 836.5 MHz, Pin = 18 dBm
Main Characteristics
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
3.0
Pulse test
2.5
3
Pch (W)
4
10
V
8V
(A)
Channel Power Dissipation
2.0
6V
5V
4V
3V
1
Drain Current
2
I
D
1.5
1.0
0.5
V
GS
= 2 V
0
50
100
150
Tc (°C)
200
0
2
4
6
8
(V)
10
Case Temperature
Drain to Source Voltage V
DS
Forward Transfer Admittance
vs. Drain Current
Typical Transfer Characteristics
1.0
1.0
Forward Transfer Admittance |yfs| (S)
(A)
0.8
Tc = -25°C
25°C
75°C
0.5
Tc = -25°C
25°C
I
D
0.2
0.1
75°C
0.6
Drain Current
0.4
0.05
0.2
V
DS
= 12 V
Pulse Test
1
2
3
4
V
GS
(V)
5
0.02
V
DS
= 12 V
Pulse Test
0.05
0.1
0.2
0.5
1
0
0.01
0.01 0.02
Gate to Source Voltage
Drain Current I
D
(A)
Rev.3.00, Feb.14.2005, page 2 of 4
2SK2596
Drain to Source Saturation Voltage
vs. Drain Current
Drain to Source Saturation Voltage
V
DS(sat)
(V)
Gate to Source Cutoff Voltage vs.
Ambient Temperature
1.2
Gate to Source Cutoff Voltage
V
GS(off)
(V)
10
5
2
1
0.5
0.2
0.1
V
DS
= 12 V
Pulse Test
0.05
0.1
0.2
0.5
1
75°C
Tc = -25°C
25°C
1.0
0.8
0.6
0.4
0.2
V
DS
= 12 V
0
-25
0
25
50
75
100
125
10 mA
1 mA
I
D
=
0.1 m
A
0.05
0.02
0.01
0.01 0.02
Drain Current I
D
(A)
Input Capacitance vs.
Gate to Source Voltage
24
Output Capacitance Coss (pF)
Input Capacitance Ciss (pF)
Ambient Temperature Ta (°C)
Output Capacitance vs.
Drain to Source Voltage
100
50
20
10
5
V
GS
= 0
f = 1 MHz
20
22
20
18
16
14
-10
V
DS
= 0
f = 1 MHz
-6
-2
2
6
10
Gate to Source Voltage V
GS
(V)
2
1
0.5 1
2
5 10
0.1 0.2
Drain to Source V
DS
(V)
Reverse Transfer Capacitance Crss (pF)
Reverse Transfer Capacitance vs.
Gate to Source Voltage
100
50
Output Power Po (W)
Output Power, Drain Efficiency
vs. Input Power
2.5
V
DS
= 12 V
I
DO
= 100 mA
2.0 f = 836.5 MHz
1.5
Po
η
D
1.0
40
100
(%)
Drain Efficiency
η
D
80
20
10
5
V
GS
= 0
f = 1 MHz
0.5
1
2
5
10
20
60
2
0.5
20
0
1
0.1 0.2
0
20
40
60
80
100
Gate to Source Voltage V
GS
(V)
Input power Pin (W)
Rev.3.00, Feb.14.2005, page 3 of 4
2SK2596
Package Dimensions
JEITA Package Code
SC-62
RENESAS Code
PLZZ0004CA-A
Previous Code
UPAK / UPAKV
MASS[Typ.]
0.050g
Unit: mm
4.5 ± 0.1
1.5 1.5
3.0
Ordering Information
Part Name
2SK2596BX
1000
Quantity
φ178
taping
Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00, Feb.14.2005, page 4 of 4
0.8 Min
0.44 Max
(0.4)
0.53 Max
0.48 Max
(2.5)
φ
1
2.5 ± 0.1
4.25 Max
0.4
1.8 Max
1.5 ± 0.1
0.44 Max
(1.5)
(0.2)
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
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