MJE200G (NPN),
MJE210G (PNP)
Complementary Silicon
Power Plastic Transistors
These devices are designed for low voltage, low−power, high−gain
audio amplifier applications.
Features
http://onsemi.com
•
•
•
•
•
High DC Current Gain
Low Collector−Emitter Saturation Voltage
High Current−Gain − Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb−Free and are RoHS Compliant*
5.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
25 VOLTS, 15 WATTS
PNP
NPN
COLLECTOR 2, 4
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
I
CM
I
B
P
D
15
0.12
P
D
1.5
0.012
T
J
, T
stg
–65 to +150
W
mW/_C
_C
W
mW/_C
Value
40
25
8.0
5.0
10
1.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
COLLECTOR 2, 4
3
BASE
EMITTER 1
3
BASE
EMITTER 1
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
8.34
83.4
Unit
_C/W
_C/W
YWW
JE2x0G
Y
= Year
WW
= Work Week
JE2x0 = Device Code
x = 0 or 1
G
= Pb−Free Package
ORDERING INFORMATION
Device
MJE200G
MJE210G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units / Box
500 Units / Box
500 Units / Box
MJE210TG
1
December, 2013 − Rev. 15
Publication Order Number:
MJE200/D
MJE200G (NPN), MJE210G (PNP)
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 10 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 40 Vdc, I
E
= 0)
(V
CB
= 40 Vdc, I
E
= 0, T
J
= 125_C)
Emitter Cutoff Current
(V
BE
= 8.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 1)
(I
C
= 500 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 1.0 Vdc)
(I
C
= 5.0 Adc, V
CE
= 2.0 Vdc)
Collector−Emitter Saturation Voltage (Note 1)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 2.0 Adc, I
B
= 200 mAdc)
(I
C
= 5.0 Adc, I
B
= 1.0 Adc)
Base−Emitter Saturation Voltage (Note 1)
(I
C
= 5.0 Adc, I
B
= 1.0 Adc)
Base−Emitter On Voltage (Note 1)
(I
C
= 2.0 Adc, V
CE
= 1.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(I
C
= 100 mAdc, V
CE
= 10 Vdc, f
test
= 10 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
MJE200G
MJE210G
f
T
65
C
ob
−
−
80
120
−
pF
MHz
h
FE
70
45
10
V
CE(sat)
−
−
−
V
BE(sat)
−
V
BE(on)
−
1.6
2.5
Vdc
0.3
0.75
1.8
Vdc
−
180
−
Vdc
−
V
CEO(sus)
25
I
CBO
−
−
I
EBO
−
100
100
100
nAdc
mAdc
nAdc
−
Vdc
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
[
2.0%.
2. f
T
=
⎪h
fe
⎪•
f
test
.
16
TC
PD, POWER DISSIPATION (WATTS)
1.6
TA
PD, POWER DISSIPATION (WATTS)
12
1.2
8.0
0.8
4.0
0.4
0
20
40
60
80
100
120
140
0
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
http://onsemi.com
2
MJE200G (NPN), MJE210G (PNP)
V
CC
+ 30 V
R
C
R
B
D
1
-4 V
SCOPE
t, TIME (ns)
1K
500
300
200
100
50
30
20
10
5
3
2
MJE200
MJE210
3
5
10
t
r
t
d
25
ms
+11 V
0
- 9.0 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
51
V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25°C
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
1
1
2
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
I
C
, COLLECTOR CURRENT (AMPS)
Figure 2. Switching Time Test Circuit
Figure 3. Turn−On Time
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.02
D = 0.5
0.2
0.1
0.05
0.02
0.01
0 (SINGLE PULSE)
q
JC
(t) = r(t)
q
JC
q
JC
= 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.05
0.1
0.2
0.5
1.0
2.0
t, TIME (ms)
5.0
10
20
50
100
200
Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMP)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
1.0 ms
500
ms
100
ms
dc
5.0 ms
T
J
= 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
2.0
3.0
5.0 7.0
10
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
30
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
≤
150_C. T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 5. Active Region Safe Operating Area
http://onsemi.com
3
MJE200G (NPN), MJE210G (PNP)
10K
5K
3K
2K
1K
t, TIME (ns)
500
300
200
100
50
30
20
10
0.01
t
f
MJE200
MJE210
0.2 0.3 0.5
1
2 3
0.02 0.03 0.05 0.1
I
C
, COLLECTOR CURRENT (AMPS)
5
10
t
s
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
200
T
J
= 25°C
C, CAPACITANCE (pF)
100
70
50
C
ob
30
20
0.4 0.6
MJE200 (NPN)
MJE210 (PNP)
1.0
2.0
4.0 6.0
10
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
C
ib
Figure 6. Turn−Off Time
Figure 7. Capacitance
NPN
MJE200
400
T
J
= 150°C
25°C
hFE , DC CURRENT GAIN
400
PNP
MJE210
hFE , DC CURRENT GAIN
200
200
T
J
= 150°C
25°C
- 55°C
100
80
60
40
V
CE
= 1.0 V
V
CE
= 2.0 V
0.2 0.3
0.5 0.7 1.0
2.0
I
C
, COLLECTOR CURRENT (AMP)
3.0
5.0
100
80
60
40
- 55°C
V
CE
= 1.0 V
V
CE
= 2.0 V
20
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
I
C
, COLLECTOR CURRENT (AMP)
3.0
5.0
20
0.05 0.07 0.1
Figure 8. DC Current Gain
2.0
T
J
= 25°C
1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.0
T
J
= 25°C
1.6
1.2
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 1.0 V
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0 3.0
5.0
1.2
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 1.0 V
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0 3.0
5.0
0.8
0.8
Figure 9. “On” Voltage
http://onsemi.com
4
MJE200G (NPN), MJE210G (PNP)
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
q
VB
for V
BE
- 55°C to 25°C
0.2
0.3
0.5 0.7
1.0
2.0 3.0
5.0
25°C to 150°C
q
VC
for V
CE(sat)
25°C to 150°C
- 55°C to 25°C
*APPLIES FOR I
C
/I
B
≤
h
FE/3
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1.0
2.0 3.0
5.0
q
VB
for V
BE
25°C to 150°C
- 55°C to 25°C
*q
VC
for V
CE(sat)
- 55°C to 25°C
25°C to 150°C
*APPLIES FOR I
C
/I
B
≤
h
FE/3
- 2.5
0.05 0.07 0.1
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients
http://onsemi.com
5
求职招聘
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
