Freescale Semiconductor
Technical Data
Document Number: MRF5S21090H
Rev. 3, 10/2008
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
•
Typical 2--carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
= 850 mA,
P
out
= 19 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --40.5 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Lower Thermal Resistance Package
•
Low Gold Plating Thickness on Leads, 40
μ″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S21090HR3
MRF5S21090HSR3
2110-
-2170 MHz, 19 W AVG., 28 V
2 x W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
CASE 465-
-06, STYLE 1
NI-
-780
MRF5S21090HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF5S21090HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
--0.5, +65
--0.5, +15
269
1.5
-- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 90 W CW
Case Temperature 76°C, 19 W CW
Symbol
R
θJC
Value
(1,2)
0.65
0.69
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
MRF5S21090HR3 MRF5S21090HSR3
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
On Characteristics (DC)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 850 mAdc)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.7
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
—
2.9
3.9
0.25
5
3.5
—
—
—
Vdc
Vdc
Vdc
S
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 850 mA, P
out
= 19 W Avg., f = 2112.5 MHz,
2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset. IM3
measured in 3.84 MHz Bandwidth @
±10
MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
G
ps
η
D
IM3
ACPR
IRL
12.5
24
—
—
—
14.5
26
--37.5
--40.5
--15
—
—
--35
--38
--9
dB
%
dBc
dBc
dB
MRF5S21090HR3 MRF5S21090HSR3
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
C3
V
BIAS
R1
R2
C4
C5
C9
C6
Z4
RF
INPUT
Z1
Z2
C14
C1
Z5
Z3
Z6
Z7
Z14
Z8
DUT
Z9
Z10
Z11 Z12
C10
R3
C7
C8
R4
+
C13
V
SUPPLY
W1
C11
C12
Z13
Z15
C2
Z16
Z17
C15
Z18
Z19
Z20
Z21
RF
OUTPUT
ARCHIVE INFORMATION
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
1.0856″ x 0.080″ Microstrip
0.130″ x 0.080″ Microstrip
0.230″ x 0.080″ Microstrip
0.347″ x 0.208″ Microstrip
0.090″ x 0.208″ Microstrip
0.650″ x 0.176″ Taper
0.623″ x 0.610″ Microstrip
0.044″ x 0.881″ Microstrip
0.044″ x 0.869″ Microstrip
1.076″ x 0.446″ Microstrip
0.320″ x 0.393″ Microstrip
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
PCB
0.609″ x 0.220″ Microstrip
0.290″ x 0.106″ Microstrip
0.290″ x 0.106″ Microstrip
0.080″ x 0.025″ Microstrip
1.080″ x 0.160″ Microstrip
0.180″ x 0.080″ Microstrip
0.260″ x 0.147″ Microstrip
0.500″ x 0.080″ Microstrip
0.199″ x 0.147″ Microstrip
0.365″ x 0.080″ Microstrip
Arlon GX0300--55--22, 0.03″,
ε
r
= 2.55
Figure 1. MRF5S21090HR3(HSR3) Test Circuit Schematic
Table 5. MRF5S21090HR3(HSR3) Test Circuit Component Designations and Values
Part
C1
C2
C3
C4, C12
C5
C6
C7
C8
C9, C10
C11
C13
C14, C15
R1
R2
R3, R4
W1
Description
9.1 pF Chip Capacitor
8.2 pF Chip Capacitor
2.0 pF Chip Capacitor
0.1
μF
Chip Capacitors
5.6 pF Chip Capacitor
5.1 pF Chip Capacitor
7.5 pF Chip Capacitor
1.2 pF Chip Capacitor
0.56
μF
Chip Capacitors
1000 pF Chip Capacitor
470
μF,
35 V Electrolytic Capacitor
0.4 – 2.5 Variable Capacitors, Gigatrim
1 kΩ, 1/4 W Chip Resistor
560 kΩ, 1/4 W Chip Resistor
12
Ω,
1/4 W Chip Resistors
Wire Strap
Part Number
ATC100B9R1CT500XT
ATC100B8R2CT500XT
ATC100B2R0BT500XT
CDR33BX104AKYS
ATC100B5R6CT500XT
ATC100B5R1CT500XT
ATC100B7R5JT500XT
ATC100B1R2BT500XT
700A561MT150XT
ATC100B102JT500XT
EKME630ELL471MK25S
27281SL
CRCW12061001FKEA
CRCW12065600FKEA
CRCW120612R0FKEA
Manufacturer
ATC
ATC
ATC
Kemet
ATC
ATC
ATC
ATC
ATC
ATC
Nippon Chemi--Con
Johanson
Vishay
Vishay
Vishay
MRF5S21090HR3 MRF5S21090HSR3
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
C3 C5
V
GG
R2
R1
R3
C4
C6
C9
C10
C7 C8
C13
C11
C12
R4
W1
V
DD
C1
CUT OUT AREA
C2
C15
C14
ARCHIVE INFORMATION
MRF5S21090
Rev 5
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/-
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 2. MRF5S21090HR3(HSR3) Test Circuit Component Layout
MRF5S21090HR3 MRF5S21090HSR3
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS
15
14
13
G ps , POWER GAIN (dB)
12
11
10
9
8
7
6
IM3
ACPR
2100
2120
2140
2160
2180
f, FREQUENCY (MHz)
IRL
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
--10
--15
--20
--25
--30
--35
G
ps
η
D
V
DD
= 28 Vdc, P
out
= 19 W (Avg.), I
DQ
= 850 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
40
35
30
25
20
--20
--25
--30
--35
--40
--45
2200
ARCHIVE INFORMATION
Figure 3. 2-
-Carrier W-
-CDMA Broadband Performance
17
IMD,THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 1200 mA
1000 mA
15
14
13
12
850 mA
650 mA
V
DD
= 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurement, 10 MHz Tone Spacing
--15
--20
--25
--30
--35
--40
--45
--50
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
16
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurement, 10 MHz Tone Spacing
I
DQ
= 450 mA
1200 mA
450 mA
1000 mA
650 mA
1
10
P
out
, OUTPUT POWER (WATTS) PEP
850 mA
100
Figure 4. Two-
-Tone Power Gain versus
Output Power
Figure 5. 3rd Order Intermodulation Distortion
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
--20
--25
--30
--35
--40
--45
--50
--55
--60
0.1
5th Order
Pout , OUTPUT POWER (dBm)
3rd Order
57
55
53
51 P1dB = 50.47 dBm (111.4 W)
49
47
45
30
32
34
V
DD
= 28 Vdc, I
DQ
= 850 mA
Pulsed CW, 8
μsec(on),
1 msec(off)
f = 2140 MHz
36
38
40
42
Ideal
P3dB = 51.17 dBm (130.9 W)
Actual
7th Order
V
DD
= 28 Vdc, P
out
= 90 W (PEP), I
DQ
= 850 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
1
TWO--TONE SPACING (MHz)
10
P
in
, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MRF5S21090HR3 MRF5S21090HSR3
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
5
2080
G ps , POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
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