The Si9987 is an integrated, buffered H-bridge with TTL
compatible inputs and the capability of delivering a
continuous 1 A at V
DD
= 5 V (room temperature) at switching
rates up to 500 kHz. Internal logic prevents the upper and
lower outputs of either half-bridge from being turned on
simultaneously. Unique input codes allow both outputs to be
forced low (for braking) or forced to a high impedance level.
The Si9987 is available in an 8-pin SOIC package,
specified to operate over a voltage range of 3.8 V to 13.2 V,
and the commercial temperature range of 0 °C to 70 °C
(C suffix) and - 40 °C to 85 °C (D suffix). The Si9987 is
available in lead free.
FEATURES
•
•
•
•
•
•
1 A H-bridge
500 kHz switching rate
Shoot-through limited
TTL compatible inputs
3.8 V to 13.2 V operating range
Surface mount packaging1 A H-bridge
APPLICATIONS
•
•
•
•
•
•
•
VCM driver
Brushed motor driver
Stepper motor driver
Power converter
Optical disk drives
Power supplies
High performance servo
FUNCTIONAL BLOCK DIAGRAM, PIN CONFIGURATION AND TRUTH TABLE
SO-8
S
A
GND
V
DD
S
B
1
2
3
4
Top View
(6)
8
OUT
A
IN
A
IN
B
OUT
B
(7)
IN
A
Shoot-Through
Protection Logic
IN
B
(3)
V
DD
Si9987
7
6
5
TRUTH TABLE
IN
A
1
0
0
1
IN
B
0
1
0
1
OUT
A
1
0
0
HiZ
OUT
B
0
1
0
HiZ
(2)
GND
(1)
S
A
(8)
(5)
OUTPUT
A
B
(4)
S
B
ORDERING INFORMATION
Part Number
Si9987CY-T1
Si9987DY-T1
Si9987CY-T1-E3
Si9987DY-T1-E3
Si9987CY
Si9987DY
Temperature Range
0 °C to 70 °C
- 40 °C to 85 °C
0 °C to 70 °C
- 40 °C to 85 °C
0 °C to 70 °C
- 40 °C to 85 °C
Package
Tape and reel
Lead free Tape and reel
Bulk (tubes)
Document Number: 70864
S11-0800-Rev. E, 25-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si9987
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
a
Parameter
Voltage on any Pin with Respect to Ground
Voltage on Pins 5, 8 with Respect to Ground
Voltage on Pins 1, 4
Maximum V
DD
Peak Output Current
Storage Temperature
Maximum Junction Temperature (T
J
)
Power Dissipation
b
θ
JA
Continuous I
OUT
Current (T
J
= 135 °C)
Operating Temperature Range
Notes:
a. Device mounted with all leads soldered or welded to PC board.
b. Derate 10 mW/°C above 25 °C.
c. T
J
= T
A
+ (P
D
x
θ
JA
), P
D
= power dissipation.
c
T
A
= 25 °C
T
A
= 70 °C
T
A
= 85 °C
Si9987CY
Si9987DY
Limit
- 0.3 V to V
DD
+ 0.3 V
- 1 V to V
DD
+ 1 V
- 0.3 V to GND + 1 V
15
1.5
- 65 to 150
150
1
100
± 1.02
± 0.75
± 0.65
0 to 70
- 45 to 85
Unit
V
V
A
°C
W
°C/W
A
°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
V
DD
Maximum Junction Temperature (T
J
)
Limit
3.8 to 13.2
135
Unit
V
°C
SPECIFICATIONS
Parameter
Input
Input Voltage High
Input Voltage Low
Input Current with Input Voltage High
Input Current with Input Voltage Low
Output
Symbol
Test Conditions Unless Specified
V
DD
= 3.8 V to 13.2 V
S
A
at GND, S
B
at GND
Limits
Min
2
V
IN
= 2 V
V
IN
= 0 V
V
DD
= 10.8 V
V
DD
= 4.5 V
V
DD
= 10.8 V
I
OUT
= - 500 mA
V
DD
= 4.5 V
I
OUT
= - 300 mA, V
DD
= 3.8 V
V
DD
= 10.8 V
I
OUT
= 1 mA
V
DD
= 4.5 V
V
DD
= 10.8 V
I
OUT
= 500 mA
V
DD
= 4.5 V
I
OUT
= 300 mA, V
DD
= 3.8 V
IN
A
= IN
B
≥
2 V, V
OUT
= V
DD
= 13.2 V
V
OUT
= 0, V
DD
= 13.2 V
I
OUT
= 100 mA
IN
A
= IN
B
≥
2 V
I
OUT
= - 100 mA
I
OUT
= - 1 mA
IN = 100 kHz, V
DD
= 5.5 V
IN
A
= IN
B
= 4.5 V, V
DD
= 5.5 V
V
DD
= 5 V
1
1
-1
10.40
4.00
10.60
4.25
3.63
10.56
4.20
10.68
4.35
3.70
0.24
0.40
0.30
0.50
0.12
0.20
0.15
0.25
0.10
0.17
0
10
0
V
DD
+ 0.7 V
DD
+ 0.9
- 0.7
1.8
75
300
100
2.5
125
a
Typ
b
Max
a
Unit
V
INH
V
INL
I
INH
I
INL
V
µA
Output Voltage High
c
V
OUTH
V
Output Voltage Low
c
V
OUTL
Output Leakage Current Low
Output Leakage Current High
Output V Clamp High
Output V Clamp Low
Supply
V
DD
Supply Current
Dynamic
Propagation Delay Time
I
OLL
I
OLH
V
CLH
V
CLL
I
DD
T
PLH
T
PHL
- 10
- 0.9
µA
V
mA
µA
nS
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Maximum value measured at T
J
= 135 °C. Typical value measured at T
J
= T
A
= 25 °C (pulse width
≤
300 µsec, duty cycle
≤
2 %).
www.vishay.com
2
Document Number: 70864
S11-0800-Rev. E, 25-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si9987
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C unless otherwise noted)
12
V
DD
= 10.8 V
500
400
9
VOUTL (mV)
VOUTH (V)
300
V
DD
= 3.8 V
4.5 V
6
4.5 V
10.8 V
200
3
3.8 V
100
0
0.50
0.75
1.00
Output Current (A)
1.25
1.50
0
0.50
0.75
1.00
Output Current (A)
1.25
1.50
Output High Voltage vs. Output Current
200
6
Output Low Voltage vs. Output Current
f = 100 kHz
5
160
I DD - Standby ( µ A)
4
120
I DD (mA)
3
2
80
1
40
4
6
8
10
12
14
0
4
6
8
10
12
14
V
DD
- Supply Voltage (V)
V
DD
-
Supply Voltage (V)
Supply Current vs. Supply Voltage
200
180
160
I DD - Standby (µ A)
140
120
100
5.5 V
80
60
- 35
0
- 35
I DD (mA)
V
DD
= 13.2 V
6
8
Supply Current vs. Supply Voltage
f = 100 kHz
V
DD
= 13.2 V
4
5.5 V
2
- 20
-5
10
25
40
55
70
85
- 20
-5
10
25
40
55
70
85
Temperature (°C)
Temperature (°C)
Supply Current vs. Temperature
Supply Current vs. Temperature
Document Number: 70864
S11-0800-Rev. E, 25-Apr-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si9987
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C unless otherwise noted)
600
15
500
12
V
DD
= 13.2 V
I DD (mA)
9
Delay Time (ns)
400
300
T
PLH
6
200
T
PHL
100
3
5.5 V
3.8 V
0
3
6
9
V
DD
- Supply Voltage (V)
12
15
0
0
50
100
f - Frequency (kHz)
150
200
Propagation Time vs. Supply Voltage
35
f = 500 kHz
28
0.50
0.46
0.42
0.38
R OUT (Ω)
I DD (mA)
21
0.34
0.30
0.26
0.22
7
0.18
0.14
0
4
6
8
10
12
14
0.10
2
Supply Current vs. Frequency
T
A
= 135 °C
85 °C
14
25 °C
- 40 °C
4
6
8
V
DD
10
12
14
V
DD
- Supply Voltage (v)
Supply Current vs. Supply Voltage
0.5
1.5
1.4
V
DD
= 3.8 V
R OUT Normalized (Ω)
0.4
R OUT (Ω)
1.3
4.5 V
10.8 V
5.5 V
0.3
13.2 V
1.2
1.1
1.0
0.9
0.8
0.7
0.1
- 50
0.6
- 50
R
OUT
vs. V
DD
V
DD
= 10.8 V
V
DD
= 4.5 V
0.2
0
50
Temperature (° C)
100
150
- 25
0
25
50
75
100
125
150
Temperature (° C)
R
OUT
vs. Junction Temperature (T
J
)
R
OUT
Normalized vs. Junction Temperature (T
J
)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
www.vishay.com/ppg?70864.
www.vishay.com
4
Document Number: 70864
S11-0800-Rev. E, 25-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
许多MEMS器件，像加速度计、机械共振器件等，都需要在真空环境下才能实现设计功能。然而检验封装腔体是否达到了所要求的真空程度一直一来都是个棘手的问题。密歇根大学Khalil Najafi教授研究小组的研究人员最近开发出一种用微机械制造方法实现，可以在封装的封帽上完成皮拉尼真空测量的方案。使用这种方法可以完成封装的氦气检漏测试，该成果已发表在IEEE Transactions on Advan...[详细]
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