Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD128
PUMZ1
NPN/PNP general purpose
transistors
Product data sheet
Supersedes data of 2002 May 6
2004 Oct 15
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 40 V)
•
Reduces number of components and boardspace.
APPLICATIONS
•
General purpose switching and amplification.
handbook, halfpage
PUMZ1
PINNING
PIN
1, 4
2, 5
3, 6
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR2; TR1
6
5
4
5
4
DESCRIPTION
Two independently operating NPN/PNP transistors in an
SC-88; SOT363 plastic package.
6
TR2
TR1
1
2
3
1
Top view
MAM341
MARKING
TYPE NUMBER
PUMZ1
Note
1. * = -: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION
MARKING CODE
(1)
F*Z
2
3
Fig.1 Simplified outline (SC-88) and symbol.
PACKAGE
TYPE NUMBER
NAME
PUMZ1
−
DESCRIPTION
plastic surface mounted package; 6 leads
VERSION
SOT363
2004 Oct 15
2
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
−
−
−
−
−
−
T
amb
≤
25
°C
−
−65
−
−65
T
amb
≤
25
°C;
note 1
−
MIN.
MAX.
PUMZ1
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Device mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Per device
R
th(j-a)
Note
1. Device mounted on an FR4 printed-circuit board.
thermal resistance from junction to ambient
note 1
416
K/W
PARAMETER
CONDITIONS
VALUE
UNIT
total power dissipation
300
mW
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
50
40
5
100
200
200
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
2004 Oct 15
3
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
−
−
−
120
−
−
−
I
C
= 2 mA; V
CE
= 12 V; f = 100 MHz 100
MIN.
PUMZ1
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
EBO
h
FE
V
CEsat
C
c
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
collector capacitance
TR1
TR2
f
T
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
transition frequency
I
E
= 0 A; V
CB
= 30 V
I
E
= 0 A; V
CB
= 30 V; T
j
= 150
°C
I
C
= 0 A; V
EB
= 4 V
I
C
= 1 mA; V
CE
= 6 V
I
C
= 50 mA; I
B
= 5 mA; note 1
I
E
= i
e
= 0 A; V
CB
= 12 V; f = 1 MHz
1.5
2.2
−
pF
pF
MHz
100
10
100
−
200
mV
nA
μA
nA
2004 Oct 15
4
PCB设计
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