PD - 97353A
IRF1324SPbF
IRF1324LPbF
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
D
HEXFET
®
Power MOSFET
G
S
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
I
D
(Package Limited)
24V
1.3mΩ
1.65mΩ
340A
195A
c
G
D
S
S
D
G
TO-262
IRF1324LPbF
D
2
Pak
IRF1324SPbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Max.
340
240
195
1420
300
2.0
± 20
0.46
-55 to + 175
300
Units
A
d
f
W
W/°C
V
V/ns
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
°C
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Ãd
e
Thermal Resistance
Symbol
R
θJC
R
θJA
g
jk
270
See Fig. 14, 15, 22a, 22b
mJ
A
mJ
Junction-to-Case
Junction-to-Ambient (PCB Mounted, steady-state)
k
Parameter
Typ.
–––
–––
Max.
0.50
40
Units
°C/W
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1
09/24/09
IRF1324S/LPbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min. Typ. Max. Units
24
–––
–––
2.0
–––
–––
–––
–––
–––
–––
22
1.3
–––
–––
–––
–––
–––
2.3
Conditions
–––
V V
GS
= 0V, I
D
= 250µA
––– mV/°C Reference to 25°C, I
D
= 5.0mA
1.65 mΩ V
GS
= 10V, I
D
= 195A
4.0
V V
DS
= V
GS
, I
D
= 250µA
20
µA V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
250
200
nA V
GS
= 20V
V
GS
= -20V
-200
–––
Ω
g
d
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Min. Typ. Max. Units
–––
160
84
49
76
17
190
83
120
7590
3440
1960
4700
4490
–––
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
V
DS
= 10V, I
D
= 195A
I
D
= 195A
V
DS
= 12V
V
GS
= 10V
I
D
= 195A, V
DS
=0V, V
GS
= 10V
V
DD
= 16V
I
D
= 195A
R
G
= 2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 24V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 19V , See Fig. 11
V
GS
= 0V, V
DS
= 0V to 19V
180
–––
–––
–––
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related) –––
Effective Output Capacitance (Time Related)
–––
g
ns
pF
g
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
i
h
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
––– 350
–––
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 195A, V
GS
= 0V
T
J
= 25°C
V
R
= 20V,
I
F
= 195A
T
J
= 125°C
T
J
= 25°C
di/dt = 100A/µs
T
J
= 125°C
T
J
= 25°C
D
A
A
Ãd
1420
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
––– –––
1.3
V
–––
46
–––
ns
–––
71
–––
––– 160 –––
nC
––– 430 –––
–––
7.7
–––
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
S
g
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140).
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.014mH
R
G
= 25Ω, I
AS
= 195A, V
GS
=10V. Part not recommended for use
above this value.
I
SD
≤
195A, di/dt
≤
450A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
2
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IRF1324S/LPbF
10000
≤
60µs PULSE WIDTH
Tj = 25°C
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
10000
≤
60µs PULSE WIDTH
Tj = 175°C
ID, Drain-to-Source Current (A)
TOP
ID, Drain-to-Source Current (A)
1000
100
1000
BOTTOM
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
10
100
1
4.0V
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
4.0V
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.0
ID = 195A
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
10
T J = 25°C
1.5
1.0
1
VDS = 15V
≤60µs
PULSE WIDTH
0.1
2
3
4
5
6
7
8
9
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 195A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 19V
VDS= 12V
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
1
10
VDS, Drain-to-Source Voltage (V)
100
0
50
100
150
200
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRF1324S/LPbF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100µsec
1msec
100
Limited by
package
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.0
0.5
1.0
1.5
1
10
VDS, Drain-to-Source Voltage (V)
100
VSD, Source-to-Drain Voltage (V)
100
TJ = 175°C
10
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
VGS = 0V
1.0
DC
350
300
ID, Drain Current (A)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
32
Id = 5mA
Limited By Package
250
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
30
28
26
24
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
2.0
1.8
1.6
1.4
Fig 10.
Drain-to-Source Breakdown Voltage
1200
EAS , Single Pulse Avalanche Energy (mJ)
1000
800
600
400
200
0
ID
TOP
44A
83A
BOTTOM 195A
Energy (µJ)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-5
0
5
10
15
20
25
30
25
50
75
100
125
150
175
Fig 11.
Typical C
OSS
Stored Energy
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
4
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IRF1324S/LPbF
1
Thermal Response ( Z thJC ) °C/W
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
1
τ
2
τ
3
τ
4
τ
4
Ri (°C/W)
0.0125
0.0822
0.2019
0.2036
τi
(sec)
0.000008
0.000078
0.001110
0.007197
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Tj
= 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
100
0.05
0.10
0.01
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τ
j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs.Pulsewidth
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