SSM01N60P
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Dynamic dv/dt rating
Repetitive-avalanche rated
Fast switching
Simple drive requirement
G
D
S
BV
DSS
R
DS(ON)
I
D
TO-220
600V
8Ω
1.6A
Description
D
The TO-220 package is widely preferred for commercial and
industrial applications. The SSM01N60P is well suited for DC/DC and
AC/DC converters in the telecom, industrial and consumer environment.
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
=25°C
I
D
@ T
C
=100°C
I
DM
P
D
@ T
C
=25°C
E
AS
I
AR
E
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
±
30
1.6
1
6
39
0.31
13
1.6
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/ °C
mJ
A
mJ
°C
°C
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.2
62
Unit
°C/W
°C/W
Rev.2.02 4/06/2004
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SSM01N60P
Electrical Characteristics @ T
j
=25
o
C (unless otherwise specified)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
600
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
7.2
-
0.8
-
-
-
7.7
1.5
2.6
8
5
14
7
286
25
5
Max. Units
-
-
8
4
-
10
100
±100
-
-
-
-
-
-
-
-
-
-
V
V/°C
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
∆
BV
DSS
/
∆
T
j
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Breakdown Voltage Temperature Coefficient
Reference to 25°C, I
D
=1mA
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
GS
=10V, I
D
=0.8A
V
DS
=V
GS
, I
D
=250uA
V
DS
=50V, I
D
=0.8A
V
DS
=600V, V
GS
=0V
V
DS
=480V
,
V
GS
=0V
V
GS
=
±
30V
I
D
=1.6A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=1.6A
R
G
=10Ω
,V
GS
=10V
R
D
=187.5Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.5V
T
j
=25°C, I
S
=1.6A, V
GS
=0V
Min.
-
-
-
Typ.
-
-
-
Max. Units
1.6
6
1.5
A
A
V
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
3
Notes:
1.Pulse width limited by safe operating area.
2.Starting T
j
=25
o
C , V
DD
=50V , L=10mH , R
G
=25Ω , I
AS
=1.6A.
3.Pulse width <300us , duty cycle <2%.
Rev.2.02 4/06/2004
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SSM01N60P
1.5
T
C
=25
o
C
V
G
=10V
V
G
=6.0V
V
G
=5.5V
I
D
, Drain Current (A)
0.8
T
C
=150
o
C
V
G
=10V
V
G
=6.0V
V
G
=5.5V
I
D
, Drain Current (A)
1
0.6
V
G
=5.0V
0.4
0.5
V
G
=5.0V
V
G
=4.5V
0.2
V
G
=4.5V
0
0
5
10
15
20
0
5
10
15
20
0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
I
D
=0.8A
2.4
V
G
=10V
1.1
2
Normalized BV
DSS
(V)
Normalized R
DS(ON)
1.6
1
1.2
0.8
0.9
0.4
0.8
-50
0
50
100
150
0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
T
j
, Junction Temperature (
o
C )
Fig 3. Normalized BV
DSS
vs. Junction
Temperature
Fig 4. Normalized On-Resistance
vs. Junction Temperature
Rev.2.02 4/06/2004
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SSM01N60P
2
50
1.6
40
I
D
, Drain Current (A)
1.2
30
P
D
(W)
0.8
20
0.4
10
0
25
50
75
100
125
150
0
0
50
100
150
T
c
, Case Temperature (
o
C )
T
c ,
Case Temperature (
o
C )
Fig 5. Maximum Drain Current vs.
Case Temperature
Fig 6. Typical Power Dissipation
10
1
DUTY=0.5
10us
1
Normalized Thermal Response (R
thjc
)
100us
1ms
0.2
I
D
(A)
0.1
0.1
0.05
10ms
0.1
P
DM
0.02
SINGLE PULSE
t
T
100ms
T
c
=25
o
C
Single Pulse
0.01
1
10
100
1000
10000
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Rev.2.02 4/06/2004
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SSM01N60P
f=1.0MHz
16
1000
I
D
=1.6A
14
V
DS
=480V
Ciss
V
GS
, Gate to Source Voltage (V)
12
100
10
8
C (pF)
Coss
10
6
4
Crss
2
0
0
1
2
3
4
5
6
7
8
9
10
1
1
9
17
25
Q
G
, Total Gate Charge (nC)
V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
5
4
10
3
I
S
(A)
T
j
= 150 C
o
VGS(th)
2
1
0
T
j
= 25
o
C
1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
(V)
-50
0
50
100
150
V
SD
(V)
T
j
, Junction Temperature (
o
C )
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
Rev.2.02 4/06/2004
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