IRF9620S, SiHF9620S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 200
V
GS
= - 10 V
22
12
10
Single
S
FEATURES
1.5
•
Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
D
2
PAK
(TO-263)
G
G D
S
D
P-Channel MOSFET
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The D
2
PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D
2
PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
D
2
PAK (TO-263)
SiHF9620STRL-GE3
a
IRF9620STRLPbF
a
SiHF9620STL-E3
a
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHF9620S-GE3
IRF9620SPbF
SiHF9620S-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
- 200
± 20
- 3.5
- 2.0
- 14
0.32
0.025
- 14
40
3.0
- 5.0
- 55 to + 150
300
d
UNIT
V
A
I
DM
Pulsed Drain
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Inductive Current, Clamp
I
LM
Maximum Power Dissipation
T
C
= 25 °C
P
D
e
Maximum Power Dissipation (PCB Mount)
T
A
= 25 °C
dV/dt
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Not Applicable
c. I
SD
- 3.5 A, dI/dt
95 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91083
S11-1051-Rev. C, 30-May-11
W/°C
A
W
V/ns
°C
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620S, SiHF9620S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJA
R
thJC
MIN.
-
-
-
TYP.
-
-
-
MAX.
62
40
3.1
°C/W
UNIT
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0, I
D
= - 250 μA
Reference to 25 °C, I
D
= - 1 mA
V
DS
= V
GS
, I
D
= - 250 μA
V
GS
= ± 20 V
V
DS
= - 200 V, V
GS
= 0 V
V
DS
= - 160 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= - 10 V
I
D
= - 1.5 A
b
V
DS
= - 50 V, I
D
= - 1.5 A
- 200
-
- 2.0
-
-
-
-
1.0
-
- 0.22
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
1.5
-
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 10
-
-
-
-
350
100
30
-
-
-
15
25
20
15
4.5
7.5
-
-
-
22
12
10
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= - 10 V
I
D
= - 4.0 A, V
DS
= - 160 V,
see fig. 11 and 18
b
-
-
-
V
DD
= - 100 V, I
D
= - 1.5 A,
R
G
= 50
,
R
D
= 67
,
see fig. 17
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
G
-
S
-
-
-
-
-
-
-
-
300
1.9
- 3.5
A
- 14
- 7.0
450
2.9
V
ns
nC
G
S
T
J
= 25 °C, I
S
= - 3.5 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= - 3.5 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Pulse width
300 μs; duty cycle
2 %.
www.vishay.com
2
Document Number: 91083
S11-1051-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620S, SiHF9620S
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
-5
V
GS
= - 10, - 9, - 8, - 7 V
-5
80 µs Pulse Test
V
GS
= - 10, - 9, - 8, - 7 V
I
D
, Drain Current (A)
-3
-6V
I
D
, Drain Current (A)
-4
-4
-3
-6V
-2
-5V
-1
80 µs Pulse Test
-4V
0
0
- 10
- 20
- 30
- 40
- 50
-2
-5V
-1
-4V
0
0
-1
-2
-3
-4
-5
91083_01
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
91083_03
V
DS
, Drain-to-Source Voltage (V)
Fig. 3 - Typical Saturation Characteristics
-5
T
J
= - 55
°
C
T
J
= 25
°
C
T
J
= 125
°
C
10
2
I
D
, Drain Current (A)
-4
Negative I
D
, Drain Current (A)
5
Operation in this area limited
by R
DS(on)
2
10
100
µs
5
-3
-2
2
1
ms
10
ms
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
1
2
5
1
5
-1
80 µs Pulse Test
V
DS
> I
D(on)
x R
DS(on) max.
0
91083_02
2
0
-2
-4
0.1
-6
-8
- 10
91083_04
10
2
5
10
2
2
5
10
3
V
GS
, Gate-to-Source Voltage (V)
Fig. 2 - Typical Transfer Characteristics
Negative V
DS
, Drain-to-Source Voltage (V)
Fig. 4 - Maximum Safe Operating Area
Z
thJC
(t)/R
thJC
, Normalized Effective Transient
Thermal Impedence (Per Unit)
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
10
-5
2
5
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse (Transient
Thermal Impedence)
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Per Unit Base = R
thJC
= 3.12 °C/W
3. T
JM
- T
C
= P
DM
Z
thJC
(t)
5
10
-4
2
5
10
-3
2
10
-2
2
5
0.1
2
5
1.0
2
5
10
91083_05
t
1
, Square Wave Pulse Duration (s)
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Document Number: 91083
S11-1051-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620S, SiHF9620S
Vishay Siliconix
4.0
80 µs Pulse Test
V
DS
> I
D(on)
x R
DS(on)
max.
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
2.5
I
D
= - 1.0 A
V
GS
= - 10 V
g
fs
,Transconductance (S)
3.2
T
J
= - 55
°
C
2.4
T
J
= 25
°
C
T
J
= 125
°
C
2.0
1.5
1.6
1.0
0.8
0.5
0.0
0
91083_06
-1
-2
-3
-4
-5
91083_09
0.0
- 40
0
40
80
120
160
I
D,
Drain Current (A)
T
J
, Junction Temperature (°C)
Fig. 6 - Typical Transconductance vs. Drain Current
Fig. 9 - Normalized On-Resistance vs. Temperature
- 20
500
C
iss
I
DR
, Reverse Drain Current (A)
- 10
400
-5
-2
- 1.0
- 0.5
- 0.2
- 0.1
- 2.0
0
- 3.2
- 4.4
- 5.6
- 6.8
- 8.0
91083_10
C, Capacitance (pF)
300
C
oss
200
C
rss
100
T
J
= 150
°
C
T
J
= 25
°
C
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C ,C
C
oss
= C
ds
+
gs gd
C
gs
+ C
gd
≈
C
gs
+ C
gd
0
- 10
- 20
- 30
- 40
- 50
91083_07
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage
BV
DSS
, Drain-to-Source Breakdown
Voltage (Normalized)
1.25
Negative V
GS
, Gate-to-Source Voltage (V)
20
I
D
= - 3.5 A
V
DS
= - 100 V
V
DS
= - 60 V
V
DS
= - 40 V
1.15
16
1.05
12
0.95
8
0.85
4
For test circuit
see figure 18
0.75
- 40
91083_08
0
0
4
8
12
0
40
80
120
160
16
20
T
J
, Junction Temperature (°C)
Fig. 8 - Breakdown Voltage vs. Temperature
91083_11
Q
G
, Total Gate Charge (nC)
Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Document Number: 91083
S11-1051-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620S, SiHF9620S
Vishay Siliconix
5
R
DS(on)
, Drain-to-Source
On Resistance (Ω)
4
R
DS(on)
measured with current
pulse of 2.0 µs duration. Initial
T
J
=
25 °C. (Heating effect of
2.0 µs pulse is minimal.)
V
GS
= - 10 V
V
GS
= - 10 V
L
Vary t
p
to obtain
required I
L
D.U.T.
V
DS
V
DD
E
C
0.05
Ω
-
+
3
t
p
I
L
2
V
GS
= - 20 V
1
V
DD
= 0.5 V
DS
E
C
= 0.75 V
DS
Fig. 15 - Clamped Inductive Test Circuit
0
0
91083_12
-4
-8
- 12
- 16
- 20
V
DD
I
D
, Drain Current (A)
Fig. 12 - Typical On-Resistance vs. Drain Current
I
L
t
p
V
DS
E
C
3.5
Negative I
D
, Drain Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
Fig. 16 - Clamped Inductive Waveforms
R
D
V
DS
V
GS
R
G
D.U.T.
+
-
- 10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
V
DD
91083_13
T
C
, Case Temperature (°C)
Fig. 17a - Switching Time Test Circuit
Fig. 13 - Maximum Drain Current vs. Case Temperature
t
d(on)
40
V
GS
10 %
35
30
25
20
15
10
5
0
0
91083_14
t
r
t
d(off)
t
f
P
D
, Power Dissipation (W)
90 %
V
DS
Fig. 17b - Switching Time Waveforms
20
40
60
80
100
120
140
T
C
, Case Temperature (°C)
Fig. 14 - Power vs. Temperature Derating Curve
Document Number: 91083
S11-1051-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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