Freescale Semiconductor
Technical Data
Document Number: MRF8P20100H
Rev. 0, 4/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1880 to
2025 MHz and GSM EDGE base station applications with frequencies from
1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular
base station modulation formats.
•
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQA
= 400 mA, V
GSB
= 1.3 Vdc, P
out
= 20 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
2025 MHz
G
ps
(dB)
16.0
η
D
(%)
44.3
Output PAR
(dB)
7.8
ACPR
(dBc)
--33.5
MRF8P20100HR3
MRF8P20100HSR3
1805-
-2025 MHz, 20 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
1880 MHz
•
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQA
= 400 mA, V
GSB
= 1.3 Vdc, P
out
= 20 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
1880 MHz
1900 MHz
1920 MHz
G
ps
(dB)
16.2
16.1
15.8
η
D
(%)
43.5
43.4
42.9
Output PAR
(dB)
7.6
7.6
7.6
ACPR
(dBc)
--30.8
--32.6
--34.6
CASE 465M-
-01, STYLE 1
NI-
-780-
-4
MRF8P20100HR3
GSM EDGE
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQA
= I
DQB
= 330 mA,
P
out
= 42 Watts Avg.
G
ps
(dB)
17.1
17.3
17.1
η
D
(%)
43.8
42.4
41.7
SR1
@ 400 kHz
(dBc)
--58.4
--60.0
--60.5
SR2
@ 600 kHz
(dBc)
--74.4
--75.5
--75.3
EVM
(% rms)
3.0
2.6
2.4
CASE 465H-
-02, STYLE 1
NI-
-780S-
-4
MRF8P20100HSR3
Frequency
1805 MHz
1840 MHz
1880 MHz
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
Features
•
Production Tested in a Symmetrical Doherty Configuration
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
•
Designed for Digital Predistortion Error Correction Systems
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
(Top View)
Figure 1. Pin Connections
©
Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8P20100HR3 MRF8P20100HSR3
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
EDGE Operation @ T
C
= 25°C
(1)
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
EDGE
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
120
0.6
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W (PEP)
W (PEP)/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 74°C, 20 W CW, 2025 MHz
28 Vdc, I
DQA
= 400 mA
28 Vdc, V
GSB
= 1.3 Vdc
Case Temperature 80°C, 42 W CW, 1805 MHz
28 Vdc, I
DQA
= I
DQB
= 330 mA
Symbol
R
θJC
0.88
0.88
0.59
Value
(2,3)
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
(4)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 75
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DA
= 400 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.2
2.0
0.1
1.9
2.7
0.2
2.7
3.5
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
MRF8P20100HR3 MRF8P20100HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(1,2)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 400 mA, V
GSB
= 1.3 Vdc, P
out
= 20 W Avg.,
f = 2025 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
G
ps
η
D
PAR
ACPR
15.0
42.0
7.2
—
16.0
44.3
7.8
--33.5
18.0
—
—
--31.0
dB
%
dB
dBc
Typical Performance
(2)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 400 mA, V
GSB
= 1.3 Vdc,
2010--2025 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
P
out
@ 3 dB Compression Point, CW
IMD Symmetry @ 20 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 15 MHz Bandwidth @ P
out
= 20 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
P1dB
P3dB
IMD
sym
—
—
—
78
126
46
—
—
—
W
W
MHz
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
53
0.1
0.013
0.004
—
—
—
—
MHz
dB
dB/°C
dBm/°C
Typical Broadband Performance — 1880 MHz
(2)
(In Freescale 1880 MHz Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
=
400 mA, V
GSB
= 1.3 Vdc, P
out
= 20 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
1880 MHz
1900 MHz
1920 MHz
G
ps
(dB)
16.2
16.1
15.8
η
D
(%)
43.5
43.4
42.9
Output PAR
(dB)
7.6
7.6
7.6
ACPR
(dBc)
--30.8
--32.6
--34.6
Typical GSM EDGE Performance
(3)
(In Freescale Class AB Test Fixture, 50 ohm system) V
DD
= 28 Volts, I
DQA
= I
DQB
= 330 mA,
P
out
= 42 Watts Avg., 1805--1880 MHz EDGE Modulation
G
ps
(dB)
17.1
17.3
17.1
η
D
(%)
43.8
42.4
41.7
SR1
@ 400 kHz
(dBc)
--58.4
--60.0
--60.5
SR2
@ 600 kHz
(dBc)
--74.4
--75.5
--75.3
EVM
(% rms)
3.0
2.6
2.4
Frequency
1805 MHz
1840 MHz
1880 MHz
1. Part internally matched both on input and output.
2. Measurement made with device in a Symmetrical Doherty configuration.
3. Measurement made with device in quadrature combined configuration.
MRF8P20100HR3 MRF8P20100HSR3
RF Device Data
Freescale Semiconductor
3
V
GSA
R2
B1
C19
V
DSA
MRF8P20100
Rev. 1
C15
C5
C13
C17
C3
R4
C1
Z1
C7
C
C9
C11
C12
C10
R1
C2
C4
R5
C14
C16
CUT OUT AREA
C8
P
C18
C6
V
GSB
R3
B2
C20
V
DSB
Figure 2. MRF8P20100HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8P20100HR3(HSR3) Test Circuit Component Designations and Values
Part
B1, B2
C1, C2, C3, C4, C5, C6
C7, C8
C9, C10
C11, C12
C13, C14
C15, C16
C17, C18
C19, C20
R1
R2, R3
R4, R5
Z1
PCB
RF Ferrite Beads
15 pF Chip Capacitors
0.3 pF Chip Capacitors
1.2 pF Chip Capacitors
10 pF Chip Capacitors
4.7
μF,
50 V Chip Capacitors
10
μF,
50 V Chip Capacitors
22
μF,
50 V Chip Capacitors
220
μF,
63 V Electrolytic Capacitors
50
Ω,
4 W Chip Resistor
10 KΩ, 1/4 W Chip Resistors
12
Ω,
1/4 W Chip Resistors
1900 MHz Band 90°, 3 dB Chip Hybrid Coupler
0.020″,
ε
r
= 3.5
Description
Part Number
MPZ2012S300AT000
ATC600F150JT250XT
ATC600F0R3BT250XT
ATC600F1R2BT250XT
ATC600F100JT250XT
C4532X5R1H475MT
C5750X7R1H106KT
C5750KF1H226ZT
MCGPR63V227M10X21
ATCCW12010T0050GBK
CRCW120612R0FKEA
CRCW120612R0FKEA
1P503S
RO4350B
Manufacturer
TDK
ATC
ATC
ATC
ATC
TDK
TDK
TDK
Multicomp
ATC
Vishay
Vishay
Anaren
Rogers
MRF8P20100HR3 MRF8P20100HSR3
4
RF Device Data
Freescale Semiconductor
Single--ended
λ
λ
4
4
Quadrature combined
λ
4
Doherty
λ
2
λ
2
Push--pull
Figure 3.
Possible Circuit Topologies
MRF8P20100HR3 MRF8P20100HSR3
RF Device Data
Freescale Semiconductor
5
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