Transistor
| 参数名称 | 属性值 |
| 厂商名称 | General Diode Corp |
| 包装说明 | , |
| Reach Compliance Code | unknown |
| Base Number Matches | 1 |
| 2N486813 | 2N2984 | 2N2983 | 2N5218 | 2N3896 | 2N486513 | 2N5008 | 2N5006 | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Transistor | Small Signal Bipolar Transistor, 3A I(C), NPN | Small Signal Bipolar Transistor, 3A I(C), NPN | Small Signal Bipolar Transistor, 10A I(C), NPN | Silicon Controlled Rectifier | Transistor | Small Signal Bipolar Transistor, 10A I(C), NPN | Small Signal Bipolar Transistor, 10A I(C), NPN |
| 厂商名称 | General Diode Corp | General Diode Corp | General Diode Corp | General Diode Corp | General Diode Corp | General Diode Corp | General Diode Corp | General Diode Corp |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - |
| 最大集电极电流 (IC) | - | 3 A | 3 A | 10 A | - | - | 10 A | 10 A |
| 配置 | - | Single | Single | Single | - | - | Single | Single |
| 最小直流电流增益 (hFE) | - | 20 | 20 | 15 | - | - | 70 | 30 |
| 最高工作温度 | - | 175 °C | 175 °C | 175 °C | - | - | 175 °C | 175 °C |
| 极性/信道类型 | - | NPN | NPN | NPN | - | - | NPN | NPN |
| 最大功率耗散 (Abs) | - | 1 W | 1 W | 50 W | - | - | 100 W | 100 W |
| 表面贴装 | - | NO | NO | NO | - | - | NO | NO |
| 标称过渡频率 (fT) | - | 18 MHz | 18 MHz | 40 MHz | - | - | 40 MHz | 30 MHz |
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