HLMP-EJ37-R0PDD
T-1 ¾ (5mm) Precision Optical Performance
AlInGaP LED Lamp
Data Sheet
Description
This Precision Optical Performance AlInGaP LED
provide superior light output for excellent readability
in sunlight and are extremely reliable. AlInGaP LED
technology provides extremely stable light output over
long periods of time. Precision Optical Performance
lamps utilize the Aluminium Indium Gallium Phosphide
(AlInGaP) technology.
This LED lamp is orange tinted, nondiffused, T-1 ¾
package incorporating second generation optics
producing well defined spatial radiation at specific
viewing cone angle. This lamp is made with an
advanced optical grade epoxy, offering superior high
temperature and high moisture resistance performance
in outdoor signal and sign applications.
The high maximum LED junction temperature limit of
+130°C enables high temperature operation in bright
sunlight conditions. The package epoxy contains both
uv-a and uv-b inhibitors to reduce the effects of long
term exposure to direct sunlight.
Features
•
Well defined Spatial radiation Patterns
•
High Luminous Output
•
AlInGaP Orange
•
High Operating Temperature: T
JLED
= +130°C
•
Superior Resistance to moisture
Applications
•
Comercial Outdoor Advertising:
- Signs
- Marquees
•
Variable Message Sign
Benefits
•
Superior Light Output performance In Outdoor
Environments
•
Suitable for Auto-insertion into PC Boards
Package Dimensions
5.00
±
0.20
(0.197 ± 0.008)
Device Selection Guide
Dominant
Wavelength
Range (nm)
605.5 -612.5
Luminous
Intensity, Min
(mcd at 20mA)
1500
8.71 ± 0.20
(0.343 ±0.008)
d
Part Number
HLMP-EJ37-R0PDD
Tolerance for luminous intensity is ±15%.
Tolerance for color bin limit is ± 0.5 nm
Notes:
1. The luminous intensity is measured on the mechanical axis of
the lamp package.
3. The optical axis is closely aligned with the package mechanical
axis.
4. The dominant wavelength, ld, is derived from the CIE
Chromaticity Diagram and represents the color of the lamp.
5.
θ1/2
is the off axis angle where the luminous intensity is one
half the on-axis intensity.
1.14 ± 0.20
(0.045 ± 0.008)
31.60
MIN.
(1.244)
1.50 ± 0.15
(0.059 ± 0.006)
0.70 (0.028)
MAX.
CATHODE
LEAD
Absolute Maximum Rating (T
A
=25°C)
Parameters
DC forward current
[1]
Peak pulsed forward current
[2]
Average forward current
Reverse voltage (Ir = 100 mA)
LED junction temperature
Power Dissipation
Operating temperature
Storage temperature
Through the wave soldering
temperature
Value
50 mA
100 mA
30 mA
5V
130
o
C
120mW
-40
o
C to +100
o
C
-40
o
C to +120
o
C
250
o
C for 3 seconds
1.00 MIN.
(0.039)
0.50 ± 0.10
SQ. TYP.
(0.020 ± 0.004)
5.80 ± 0.20
(0.228 ± 0.008)
CATHODE
FLAT
2.54 ± 0.38
(0.100 ± 0.015)
Notes :
1. All dimensions are in milimetres (inches).
2. Leads are mild steel, solder dipped.
3. Tapers shown at top of leads (bottom of lamp package) indicate
an epoxy meniscus that may extend about 1mm (0.040in.) down
the leads.
4. Recommended PC board hole diameters = 0.965/0.889 (0.038/
0.035)
5. For dome heights above lead standoff seating plane, d = 11.96
± 0.25 (0.471 ± 0.010).
Note:
1. Derate linearly as shown in fugure 4.
2. For long terms performance with minimum light output
degration, drive currents between 10mA and 30 mA are
recommended. For more information on recommended drive
condition, please refer to Application Brief I-024.
3. Operating at current below 1mA is not recommended. Please
contact your local representative for further information.
2
Electrical and Optical Characteristics (T
A
=25°C)
Parameters
Forward voltage
Reverse voltage
Peak Wavelength
Spectral Halfwidth
Speed of Response
Capacitance
Thermal Resistance
Min
5
Typ
1.98
20
609
17
20
40
240
Max
2.40
Unit
V
V
nm
nm
ns
pF
o
C/W
Test Condition
I
F
= 20 mA
I
R
= 100 µA
Peak wavelength of spectrral distribution at I
F
= 20 mA
Wavelength width at spectral distribution ½ power
point at I
F
= 20 mA
Exponential time constant
V
F
=0, f=1 MHz
LED Junction to cathode
Notes:
1. The radiant intensity, Ie in watts per steradian, may be found from the equation Ie = Iv/hV where Iv is the luminous intensity in candelas
and hV is the luminous efficacy in lumens/watt.
1.0
RELATIVE LUMINOUS INTENSITY
(NORMALIZED AT 20 mA)
3.0
2.5
2.0
1.5
1.0
0.5
0
0.8
Relative Intensity
0.6
0.4
0.2
0
550
600
Wavelength (nm)
Figure 1. Relative Intensity vs. Peak Wavelength
0
20
40
60
I
F
- DC FORWARD CURRENT - mA
650
700
Figure 3. Relative Luminous Intensity vs.
Forward Current
50
I
F
- FORWARD CURRENT - mA
45
40
50
40
30
R
JA
= 780 C/W
20
10
0
Forward Current - If
35
30
25
20
15
10
5
0
0
0.5
1
1.5
Forward Voltage - Vf(V)
2
2.5
3
R
JA
= 585 C/W
0
20
40
60
80
100
T
A
- AMBIENT TEMPERATURE - C
Figure 4. Maximum Forward Current vs.
Ambient Temperature.
Figure 2.
Voltage
Forward Current vs. Forward
3
1
Intensity Bin Limits
(mcd at 20 mA)
Bin Name
R
S
T
U
V
Min.
1500
1900
2500
3200
4200
Max.
1900
2500
3200
4200
5500
Relative Intensity
0.5
Tolerance for each bin limits is ±15%
0
-50
- 40
-30
- 20
-10
0
Angle (deg)
Figure 5. Spatial Radiation pattern
10
20
30
40
50
Color Bin Limits
(nm at 20 mA)
Bin Name
CA
CB
Min.
605.5
609
Max.
609
612.5
Tolerance for each bin limits is ±0.5nm
Note:
1. Bin categories are established for
classification of products. Product may
not be available in all bin categories.
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved.
5989-1391EN - May 29, 2006
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