Photodiodes High Speed Si APD 2520um Active Area
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | First Sensor |
产品种类 Product Category | Photodiodes |
RoHS | Details |
产品 Product | Avalanche Photodiodes |
封装 / 箱体 Package / Case | TO-5i |
安装风格 Mounting Style | Through Hole |
Peak Wavelength | 800 nm |
Dark Current | 20 nA |
Vr - Reverse Voltage | 120 V |
Rise Time | 1.5 ns |
最小工作温度 Minimum Operating Temperature | - 40 C |
最大工作温度 Maximum Operating Temperature | + 100 C |
高度 Height | 4.2 mm |
长度 Length | 9.2 mm |
系列 Packaging | Bulk |
类型 Type | NIR Enhanced Response Avalanche Photodiode |
宽度 Width | 9.2 mm |
Noise Equivalent Power - NEP | 30E-14 W/sqrt Hz |
NumOfPackaging | 1 |
Pd-功率耗散 Pd - Power Dissipation | 100 mW |
Photocurrent | 1 uA |
Responsivity | 50 A/W |
工厂包装数量 Factory Pack Quantity | 10 |
AD2500-8-TO5I | AD800-8-S1 | |
---|---|---|
描述 | Photodiodes High Speed Si APD 2520um Active Area | Photodiodes High Speed Si APD 800um Active Area |
Product Attribute | Attribute Value | Attribute Value |
制造商 Manufacturer |
First Sensor | First Sensor |
产品种类 Product Category |
Photodiodes | Photodiodes |
RoHS | Details | Details |
产品 Product |
Avalanche Photodiodes | Avalanche Photodiodes |
封装 / 箱体 Package / Case |
TO-5i | TO-52-S1 |
安装风格 Mounting Style |
Through Hole | Through Hole |
Peak Wavelength | 800 nm | 410 nm |
Dark Current | 20 nA | 1 nA |
Vr - Reverse Voltage | 120 V | 100 V |
Rise Time | 1.5 ns | 0.28 ns |
最小工作温度 Minimum Operating Temperature |
- 40 C | - 40 C |
最大工作温度 Maximum Operating Temperature |
+ 100 C | + 85 C |
高度 Height |
4.2 mm | 5.2 mm |
长度 Length |
9.2 mm | 5.4 mm |
系列 Packaging |
Bulk | Bulk |
类型 Type |
NIR Enhanced Response Avalanche Photodiode | Silicon Avalanche Photodiode |
宽度 Width |
9.2 mm | 5.4 mm |
Noise Equivalent Power - NEP | 30E-14 W/sqrt Hz | 1E-14 W/sqrt Hz |
NumOfPackaging | 1 | 1 |
Pd-功率耗散 Pd - Power Dissipation |
100 mW | 100 mW |
Photocurrent | 1 uA | 2 uA |
Responsivity | 50 A/W | 25 A/W |
工厂包装数量 Factory Pack Quantity |
10 | 10 |
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