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THN6301S

产品描述NPN SiGe RF TRANSISTOR
文件大小205KB,共11页
制造商TACHYONICS
官网地址http://www.tachyonics.co.kr/
下载文档 选型对比 全文预览

THN6301S概述

NPN SiGe RF TRANSISTOR

THN6301S文档预览

THN6301 Series
SOT 523
Unit in mm
NPN SiGe RF TRANSISTOR
Application
LNA and wide band amplifier up to GHz range
Features
o Low Noise Figure
NF = 1.1 dB Typ. @ f = 1 GHz, V
CE
= 8 V, I
C
= 5 mA
o High Power Gain
MAG =18 dB Typ. @ f = 1 GHz, V
CE
= 8 V, I
C
=15 mA
o High Transition Frequency
f
T
= 10 GHz Typ. @ V
CE
= 8 V, I
C
= 15 mA
Pin Configuration
Pin No
1
2
3
Symbol
B
E
C
Description
Base
Emitter
Collector
Unit : mm
Dimension
2.9ⅹ1.3, 1.2t
2.0ⅹ1.25, 1.0t
2.0ⅹ1.25, 1.0t
1.6ⅹ0.8, 0.8t
1.4ⅹ0.8, 0.6t
Unit
V
V
V
mA
mW
Available Package
Product
Package
SOT23
SOT323
SOT343
SOT523
SOT623F
h
FE
Classification
Marking
h
FE
AA1
AA2
125 to 300 80 to 160
THN6301S
THN6301U
THN6301Z
THN6301E
THN6301KF
Ratings
25
12
2.5
65
150
-65 ~ 150
150
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Caution : ESD sensitive device
www.tachyonics.co.kr
- 1/11 -
Aug.-2005
Rev 2.0
THN6301 Series
Electrical Characteristics
( T
A
= 25
)
Value
Symbol
I
CBO
Collector Cut-off Current
I
CEO
I
EBO
h
FE
f
T
C
CB
|S
21
|
2
Parameter
Test Condition
V
CB
= 19 V, I
E
= 0 mA
V
CE
= 12 V, I
B
= 0 mA
Min.
-
-
-
80
-
-
10
12
15
16
-
-
-
-
-
Typ.
-
-
-
150
10
0.55
12.5
14.5
16.5
18
1.1
0.09
14.5
15.5
27
Max.
0.5
5
0.5
300
-
-
-
Unit
uA
uA
uA
Emitter Cut-off Current
DC Current Gain
Transition Frequency
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 8 V, I
C
= 15 mA
V
CE
= 8 V, I
C
= 15 mA
GHz
pF
dB
Collector to Base Capacitance V
CB
= 10 V, f = 1 MHz
Insertion Power Gain
V
CE
= 8 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 15 mA, f = 1 GHz
Maximum Available Gain
Minimum Noise Figure
Noise Resistance
Associated Gain
Output 3rd Order Intercept
V
CE
= 8 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 15 mA, f = 1 GHz
-
-
dB
-
-
-
-
dB
-
-
dBm
dB
MAG
NFmin
rn
G
A
OIP
3
V
CE
= 8 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 15 mA, f = 1 GHz
V
CE
= 8 V, I
C
= 15 mA, f = 1 GHz
www.tachyonics.co.kr
- 2/11 -
Aug.-2005
Rev 2.0
THN6301 Series
Total Power Dissipation, P
T
vs. T
A
I
C
vs. V
CE
250
50
200
40
P
T
[mW]
I
C
[mA]
150
30
I
B
= 200 uA
100
20
I
B
= 150 uA
I
B
= 100 uA
I
B
= 50 uA
10
50
0
0
0
0
1
2
3
4
5
6
7
8
9
10
Ambient
25
50
Temperature, T
125
A
[℃]
150
75
100
V
CE
[V]
I
C
vs. V
BE
h
FE
vs. I
C
20
300
V
CE
= 8 V
15
250
200
V
CE
= 8 V
I
I
C
[mA]
[mA]
C
h
FE
0.2
0.4
0.6
0.8
1.0
10
150
100
5
50
0
0.0
0
0.1
1
10
100
V
[V]
V
BE
BE
[V]
I
C
[mA]
www.tachyonics.co.kr
- 3/11 -
Aug.-2005
Rev 2.0
THN6301 Series
Maximum Available Gain, MAG vs. Frequency
Insertion Power Gain, |S
21
|
2
vs. Frequency
26
24
d (T R 1 0 E s t5 3 8 1 m _ 2 8 6 (2 ))
B A F 5 3 _ o 2 _ v 5 A 0 0 1 ..S ,1
2
(S
|S
dB (2,1))
21
| [dB]
T R 1 0 E s t5 3 8 1 m _ 2 8 6 a G in
A F 5 3 _ o 2 _ v 5 A 0 0 1 ..M x a 1
Mx a 1
G in
MAG
a
[dB]
24
22
20
18
16
14
12
10
8
6
4
22
20
18
16
V
CE
= 8 V
I
C
= 15 mA
V
CE
= 3 V
I
C
= 15 mA
V
CE
= 8 V
I
C
= 15 mA
14
12
V
CE
= 3 V
I
C
= 15 mA
10
8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
freq, GHz
Frequency [GHz]
freq, GHz
Frequency
[GHz]
Transition Frequency, f
T
vs. I
C
14
Maximum Available Gain, MAG vs. I
C
20
12
V
CE
= 8 V
19
18
f = 1 GHz
V
CE
= 8 V
10
V
CE
= 3 V
17
V
CE
= 3 V
MAG [dB]
f
T
[GHz]
8
16
15
14
13
6
4
2
V
CE
= 2 V
12
11
V
CE
= 2 V
0
0
5
10
15
20
25
30
35
40
45
10
0
5
10
15
20
25
30
35
40
45
I
C
[mA]
I
C
[mA]
www.tachyonics.co.kr
- 4/11 -
Aug.-2005
Rev 2.0
THN6301 Series
Output 3rd Order Intercept Point, OIP
3
vs. I
C
(Z
S
= Z
L
= 50
Ω)
35
1
C
CB
vs. V
CB
30
f = 1 GHz
V
CE
= 8 V
0.9
f = 1 MHz
25
0.8
OIP
3
[dBm]
V
CE
= 6 V
C
CB
[pF]
V
CE
= 3 V
20
0.7
15
0.6
10
0.5
5
0.4
0
0
5
10
15
20
25
30
35
0.3
0
5
10
15
20
I
C
[mA]
NF vs. I
C
V
CE
= 8 V, I
C
= parameter, Z
S
= Z
Sopt
V
CB
[V]
Noise Figure Contours & Constant Gain
f = 1 GHz, V
CE
= 8 V, I
C
= 5 mA
2.6
f = 1 GHz
Output Stable
Input Stable
NF [dB]
2.1
G
A
=17dB
=16dB
=15dB
=14dB
=13dB
5 contour
Γ
OPT
=0.322∠104
NF =1.0dB
=1.1dB
=1.2dB
=1.3dB
4 contour
1.6
1.1
0.6
0
5
10
15
20
25
I
C
[mA]
www.tachyonics.co.kr
- 5/11 -
Aug.-2005
Rev 2.0

THN6301S相似产品对比

THN6301S THN6301U
描述 NPN SiGe RF TRANSISTOR NPN SiGe RF TRANSISTOR

 
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