Datasheet> 器件分类 > 分立半导体> 二极管> CMPD7006S

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CMPD7006S: 产品描述SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE; 产品类别分立半导体二极管; 文件大小109KB，共2页; 制造商Central Semiconductor

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CMPD7006S概述

SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE

CMPD7006S规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Central Semiconductor
包装说明	R-PDSO-G3
针数	3
Reach Compliance Code	_compli
ECCN代码	EAR99
配置	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JESD-30 代码	R-PDSO-G3
JESD-609代码	e0
元件数量	2
端子数量	3
最高工作温度	150 °C
最低工作温度	-65 °C
最大输出电流	0.1 A
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
最大功率耗散	0.35 W
认证状态	Not Qualified
最大重复峰值反向电压	600 V
最大反向恢复时间	0.5 µs
表面贴装	YES
端子面层	TIN LEAD
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED

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LIM

CMPD7006

CMPD7006A

CMPD7006C

CMPD7006S

Central

Semiconductor Corp.

SURFACE MOUNT

VERY HIGH VOLTAGE

SILICON SWITCHING DIODE

DESCRIPTION:

The Central Semiconductor CMPD7006,

CMPD7006A, CMPD7006C and CMPD7006S

are silicon switching diodes with various diode

configurations, manufactured by the epitaxial

planar process and packaged in an epoxy

molded SOT-23 surface mount case. These

devices are designed for applications requiring

high voltage switching diodes.

SOT-23 CASE

The following configurations are available:

CMPD7006

CMPD7006A

CMPD7006C

CMPD7006S

SINGLE

DUAL, COMMON ANODE

DUAL, COMMON CATHODE

DUAL, IN SERIES

MARKING

CODE:

C7006

C706A

C706C

C706S

MAXIMUM RATINGS PER DIODE:

(TA=25°C)

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Continous Forward Current

Peak Repetitive Forward Current

Forward Surge Current, tp=1.0 µs

Forward Surge Current, tp=1.0 s

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

VRRM

IFRM

IFSM

TJ, Tstg

IFSM

SYMBOL

600

100

300

4.0

1.0

350

-65 to +150

357

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

VR=480V

7.0

VR=480V, TA=150°C

BVR

trr

IR=1.0µA

IF=10mA

IF=50mA

IF=100mA

VR=0V, f=1.0 MHz

IR=IF=10mA, RL=100Ω, Rec. to 1.0mA

600

675

0.88

1.04

1.16

MAX

100

1.0

1.2

1.4

5.0

500

UNITS

µA

R0 (8-December 2003)

CMPD7006S相似产品对比

	CMPD7006S	CMPD7006	CMPD7006A	CMPD7006C
描述	SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE	SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE	SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE	SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE
是否无铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合
厂商名称	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
包装说明	R-PDSO-G3	R-PDSO-G3	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3
针数	3	3	3	3
Reach Compliance Code	_compli	_compli	_compli	not_compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99
配置	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SINGLE	COMMON ANODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
二极管元件材料	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609代码	e0	e0	e0	e0
元件数量	2	1	2	2
端子数量	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C
最低工作温度	-65 °C	-65 °C	-65 °C	-65 °C
最大输出电流	0.1 A	0.1 A	0.1 A	0.1 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
最大功率耗散	0.35 W	0.35 W	0.35 W	0.35 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大重复峰值反向电压	600 V	600 V	600 V	600 V
最大反向恢复时间	0.5 µs	0.5 µs	0.5 µs	0.5 µs
表面贴装	YES	YES	YES	YES
端子面层	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
端子形式	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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