2SB1386
Epitaxial Planar Transistor
PNP Silicon
1
BASE
COLLECTOR
3
1
2
EMITTER
3
2
SOT-23
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
-20
-30
-6.0
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction Ambient
Junction and Storage, Temperature
Symbol
PD
R
θJA
T
J,Tstg
Value
150
0.5
833
-55 to +150
Unit
mW
mW/ C
C/W
C
Device Marking
2SB1386=
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage(I C =-1 mAdc, IB =0)
Collector-Base Breakdown Voltage(I C =-50 uAdc, I E =0)
Emitter-Base Breakdown Voltage(IE =-50 uAdc, I C =0)
Collector Cufoff Current(V CB =-20Vdc, I E =0)
Emitter Cufoff Current(VEB =-5Vdc, IC =0)
1. FR-5=1.0
I
I
0.75
I
I
0.062 in
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Min
-20
-30
-6.0
-
-
Max
-
-
-
-0.5
-0.5
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
WEITRON
http://www.weitron.com.tw
2SB1386
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
TYP
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = -0.5 Adc, VCE = -2.0 Vdc)
Transition Frequency
(I E = 50 mAdc, VCE = -6.0 Vdc, f=30MHz)
Output Capacitance
(I E = 0 Adc, VCB = -20 Vdc, f=1MHz)
hFE
fT
Cob
82
-
-
390
-
-
120
60
Vdc
PF
-
-
Classification of hFE
Rank
Range
Marking
P
82-180
Y
120-270
G
180-390
WEITRON
2SB1386
-2
-1
-500m
-200m
-100m
-50m
-20m
-10m
-5m
-2m
-1m
COLLECTOR CURRENT : I
C
(A)
-10
V
CE
=2V
-5
COLLECTOR CURRENT : I
C
(A)
-5
-4
-3
T
a
=100 C
25 C
25 C
50mA
45mA
40mA
35mA
A
30m
25mA
T
a
=25 C
20mA
15mA
10mA
-2
5mA
-1
0
I
B
=0A
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2 -1.4
0
-0.4
-0.8
-1.2
-1.6
-2.0
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
FIG.1 Grounded Emitter Propagation
Characteristics
5k
DC CURRENT GAIN : h
FE
FIG.2 Grounded Emitter Output
Characteristics
5k
DC CURRENT GAIN : h
FE
T
a
=25 C
V
CE
=1V
2k
1k
500
200
100
50
20
10
5
2k
1k
500
200
100
50
20
10
5
T
a
=100 C
25 C
25 C
V
CE
=5V
2V
1V
-1m -2m -5m-0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2
-5 -10
-1m-2m -5m-0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2
-5 -10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
FIG.3 DC Current Gain vs.
Collector Current
5k
DC CURRENT GAIN : h
FE
FIG.4 DC Current Gain vs.
Collector Current
-5
COLLECTOR SATURATION
VOLTAGE : V
CE(sat)
(V)
V
CE
=2V
T
a
=25 C
2k
1k
500
200
100
50
20
10
5
T
a
=100 C
25 C
25 C
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
-2m -5m-0.01
-0.02-0.05-0.1 -0.2 -0.5 -1 -2
-5 -10
I
C
/I
B
50/1
40/1
/1
30/1
10/1
-1m-2m -5m-0.01 2-0.05-0.1-0.2 -0.5 -1 -2
-0.0
-5 -10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
FIG.5 DC Current Gain vs.
Collector Current
FIG.6 Collector-Emitter Saturation
Voltage vs. Collector Current
WEITRON
2SB1386
-5
COLLECTOR SATURATION
VOLTAGE : V
CE(sat)
(V)
-5
COLLECTOR SATURATION
VOLTAGE : V
CE(sat)
(V)
I
C
/I
B
=10
I
C
/I
B
=30
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
T
a
=100 C
25 C
25 C
-5 -10
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
T
a
=100 C
25 C
25 C
-2m -5m -0.01-0.02-0.05-0.1 -0.2 -0.5 -1 -2
-2m -5m-0.01-0.02-0.05-0.1 -0.2 -0.5 -1 -2
-5 -10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
FIG.7 Collector-Emitter Saturation
Voltage vs. Collector Current
-5
COLLECTOR SATURATION
VOLTAGE : V
CE(sat)
(V)
FIG.8 Collector-Emitter Saturation
Voltage vs. Collector Current
-5
COLLECTOR SATURATION
VOLTAGE : V
CE(sat)
(V)
I
C
/I
B
=40
25 C
25 C
I
C
/I
B
=50
25 C
25 C
T
a
=100 C
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
T
a
=100
C
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
-2m -5m-0.01-0.02-0.05-0.1-0.2 -0.5 -1 -2
-5 -10
-2m -5m -0.01
-0.02 -0.05-0.1-0.2 -0.5 -1 -2
-5 -10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
FIG.9 Collector-Emitter Saturation
Voltage vs. Collector Current
TRANSEITION FREQUENCY : f
T
(MHz)
FIG.10 Collector-Emitter Saturation
Voltage vs. Collector Current
1000
COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)
1000
500
200
100
50
20
10
5
2
1
T
a
=25 C
V
CE
=6V
500
200
100
50
20
10
-0.1 -0.2
-0.5
-1
-2
-5
-10
T
a
=25 C
f=1MHz
I
E
=0A
1
2
5
10
20
50 100 200
500 1000
-20
-50
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
FIG.11 Gain Bandwidth Product
vs. Emitter Current
FIG.12 Collector Output Capacitance
vs. Collector-Base Voltage
WEITRON
2SB1386
1000
EMIITER INTPUT
CAPACITANCE : Cib (pF)
500
200
100
50
20
10
-0.1
-0.2
-0.5
-1
-2
T
a
=100 C
f=1MHz
I
c
=0A
-5
-10
EMITTER TO BASE VOLTAGE : V
EB
(V)
FIG.13 Emitter Input Capacitance
vs. Emitter-Base Voltage
WEITRON
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