AUTOMOTIVE GRADE
AUIRF7416Q
HEXFET
®
Power MOSFET
Features
l
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Advanced Process Technology
Low On-Resistance
Logic Level Gate Drive
P-Channel MOSFET
Dynamic dV/dT Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified*
S
1
2
3
4
8
7
A
D
D
D
D
V
(BR)DSS
R
DS(on)
max.
I
D
-30V
0.02
Ω
-10A
S
S
G
6
5
Top View
Description
Specifically designed for Automotive applications, this cel-
lular design of HEXFET® Power MOSFETs utilizes the lat-
est processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automo-
tive and a wide variety of other applications.
SO-8
AUIRF7416Q
Base Part Number
AUIRF7416Q
Package Type
SO-8
Standard Pack
Form
Tube
Tape and Reel
Quantity
95
2500
Orderable Part Number
AUIRF7416Q
AUIRF7416QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifica-
tions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The
thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature
(T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
E
AS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Max.
-10
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
Units
A
W
mW/°C
V
mJ
V/ns
°C
c
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
e
d
Thermal Resistance
R
θJA
Junction-to-Ambient
g
Parameter
Max.
50
Units
°C/W
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
1
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2014 International Rectifier
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March 27, 2014
AUIRF7416Q
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Conditions
-30
––– –––
V V
GS
= 0V, I
D
= -250μA
––– -0.024 ––– V/°C Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -5.6A
––– ––– 0.020
Ω
V
GS
= -4.5V, I
D
= -2.8A
––– ––– 0.035
-1.0 ––– -2.04
V V
DS
= V
GS
, I
D
= -250μA
5.6
––– –––
S V
DS
= -10V, I
D
= -2.8A
V
DS
= -24V, V
GS
= 0V
––– ––– -1.0
μA
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
––– –––
-25
V
GS
= -20V
––– ––– -100
nA
––– ––– 100
V
GS
= 20V
f
f
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
61
8.0
22
18
49
59
60
1700
890
410
92
12
32
–––
–––
–––
–––
–––
–––
–––
nC
I
D
= -5.6A
V
DS
= -24V
V
GS
= -10V, See Fig. 6 & 9
V
DD
= -15V
I
D
= -5.6A
R
G
= 6.2Ω
R
D
= 2.7Ω, See Fig. 10
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz, See Fig. 5
fÃ
ns
f
pF
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
56
99
-3.1
A
-45
-1.0
85
150
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= -5.6A, V
GS
= 0V
T
J
= 25°C,I
F
= -5.6A
di/dt = 100A/μs
e
e
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 25mH
R
G
= 25Ω, I
AS
= -5.6A. (See Figure 12)
I
SD
≤
-5.6A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
,
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
T
J
≤
150°C.
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AUIRF7416Q
100
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
10
10
-3.0V
-3.0V
20μs PULSE WIDTH
T
J
= 25°C
A
0.1
1
10
1
1
0.1
1
20μs PULSE WIDTH
T
J
= 150°C
A
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
T
J
= 25°C
T
J
= 150°C
10
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -5.6A
-I
D
, Drain-to-Source Current (A)
1.5
1.0
0.5
1
3.0
3.5
4.0
V
DS
= -10V
20μs PULSE WIDTH
4.5
5.0
5.5
A
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= -10V
100 120 140 160
A
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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AUIRF7416Q
4000
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -5.6A
V
DS
= -24V
V
DS
= -15V
16
C, Capacitance (pF)
3000
C
iss
2000
12
C
oss
8
1000
C
rss
4
0
1
10
100
A
0
0
20
40
FOR TEST CIRCUIT
SEE FIGURE 9
60
80
100
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
D
, Drain Current (A)
I
100us
T
J
= 150°C
10
T
J
= 25°C
10
1ms
1
0.4
0.6
0.8
1.0
V
GS
= 0V
A
1.2
1
0.1
T
A
= 25 °C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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Fig 8.
Maximum Safe Operating Area
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March 27, 2014
AUIRF7416Q
V
DS
Q
G
R
D
V
GS
R
G
-10V
V
G
D.U.T.
+
-10V
Charge
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 9a.
Basic Gate Charge Waveform
Fig 10a.
Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2μF
.3μF
t
d(on)
t
r
t
d(off)
t
f
V
GS
10%
+
D.U.T.
-
V
DS
V
GS
-3mA
90%
V
DS
I
G
I
D
Current Sampling Resistors
Fig 9b.
Gate Charge Test Circuit
Fig 10b.
Switching Time Waveforms
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.1
1
10
100
10
0.1
0.0001
0.001
0.01
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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March 27, 2014
-
Q
GS
Q
GD
V
DD
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