Technical Data Sheet
1.6mm Round Subminiature Side Looking Phototransiator
PT26-51B/TR8
Features
․Fast
response time
․High
photo sensitivity
․Small
junction capacitance
․Package
in 8mm tape on 7” diameter reels.
․Pb
free
․The
product itself will remain within RoHS compliant version.
Descriptions
․PT26-51B/TR8(ES)
is a phototransistor in miniature SMD package
which is molded in a black with spherical top view lens.
The device is Spectrally matched to infrared emitting diode.
Applications
․Miniature
switch
․Counters
and sorter
․Position
sensor
․Infrared
applied system
Device Selection Guide
LED Part No.
PT
Chip
Material
Silicon
Lens Color
Black
Everlight Electronics Co., Ltd.
Device No：DTT-026-269
http:\\www.everlight.com
Prepared date：03-06-2007
Rev 1
Page: 1 of 10
Hsu
Prepared by：Posen
PT26-51B/TR8
Package Dimensions
Emitter
Collector
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±0.1mm
Absolute Maximum Ratings (Ta=25℃)
Parameter
Collector-Emitter Voltage
Emitter-Collector-Voltage
Collector Current
Operating Temperature
Storage Temperature
Soldering Temperature
Power Dissipation at(or below)
25℃Free Air Temperature
Symbol
V
CEO
V
ECO
I
C
T
opr
T
stg
T
sol
P
c
Rating
30
5
20
-25 ~ +85
-40 ~ +100
260
75
Units
V
V
mA
℃
℃
℃
mW
Notes:
*1:Soldering time≦5 seconds.
Everlight Electronics Co., Ltd.
Device No：DTT-026-269
http:\\www.everlight.com
Prepared date：03-06-2007
Rev 1
Page: 2 of 10
Hsu
Prepared by：Posen
PT26-51B/TR8
Electro-Optical Characteristics (Ta=25℃)
Parameter
Rang Of Spectral Bandwidth
Wavelength Of Peak Sensitivity
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Collector-Emitter Saturation
Voltage
Collector Dark Current
Symbol
λ
0.5
λ
P
BV
CEO
BV
ECO
V
CE(sat)
I
CEO
Condition
---
---
I
C
=500μA
Ee=0mW/cm
2
I
E
=50μA
Ee=0mW/cm
2
I
C
=5mA
Ee=1mW/cm
2
V
CE
=20V
Ee=0mW/cm
2
V
CE
=5V
Ee=1mW /cm
2
λ
P
=940nm
V
CE
=5V
I
C
=1mA
R
L
=1000Ω
Min
730
---
60
Typ
---
940
---
Max
1100
---
---
Unit
nm
nm
V
7
---
---
---
---
---
---
0.4
100
V
V
nA
On State Collector Current
Rise Time
Fall Time
I
C(ON)
t
r
t
f
---
---
---
1.0
15
15
---
---
mA
μS
---
Everlight Electronics Co., Ltd.
Device No：DTT-026-269
http:\\www.everlight.com
Prepared date：03-06-2007
Rev 1
Page: 3 of 10
Hsu
Prepared by：Posen
PT26-51B/TR8
Typical Electro-Optical Characteristics Curves
Fig.1Collector Power Dissipation vs.
Ambient Temperature
Fig.2 Spectral Sensitivity
100
80
60
40
20
0
-25
0
25
50
75 85 100
1.0
Ta=25
C
0.8
0.6
0.4
0.2
0
600 700 800 900 1000 1100 1200
O
Fig.3 Relative Collector Current vs.
Ambient Temperature
Fig.4 Collector Current vs.
Irradiance
160
140
120
100
80
60
40
20
0
0
10
20
30
40 50
60
70
2
100
C
10
1
0.1
0.01
0.01
0.1
1
2
10
Everlight Electronics Co., Ltd.
Device No：DTT-026-269
http:\\www.everlight.com
Prepared date：03-06-2007
Rev 1
Page: 4 of 10
Hsu
Prepared by：Posen
PT26-51B/TR8
Typical Electro-Optical Characteristics Curves
Fig.5 Collector Dark Current vs.
Ambient Temperature
Fig.6 Collector Current vs.
Collector-Emitter Voltage
10
7
6
10
10
5
4
3
10
2
1
10
0
25
50
75
100
0
0
1
2
3
4
Everlight Electronics Co., Ltd.
Device No：DTT-026-269
http:\\www.everlight.com
Prepared date：03-06-2007
Rev 1
Page: 5 of 10
Hsu
Prepared by：Posen
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