Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT5088
CMBT5089
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N transistors
Marking
CMBT5088 = 1Q
CMBT5089 = 1R
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
5088
5089
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current
Total power dissipation up to T
amb
= 25 °C
Junction temperature
Collector-emitter saturation voltage
I
C
= 10 mA; I
B
= 1 mA
D.C. current gain
I
C
= 100 µA; V
CE
= 5 V
Transition frequency at f = 20 MHz
I
C
= 500 µA; V
CE
= 5 V
*FR-5 Board = 1.0 × 0.75 × 0.062 in.
V
CB0
V
CE0
I
C
P
tot
*
T
j
V
CEsat
h
FE
max.
max.
max.
max.
max.
max.
35
30
50
225
150
0.5
30 V
25 V
mA
mW
°C
V
400
1200
min. 300
max. 900
min.
50
f
T
MHz
Continental Device India Limited
Data Sheet
Page 1 of 3
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
V
CBO
Collector–emitter voltage (open base)
V
CEO
Emitter-base voltage (open collector)
VEBO
Collector current (d.c.)
I
C
P
tot
*
Total power dissipation up to T
amb
= 25 °C
Storage temperature
T
stg
Junction temperature
T
j
THERMAL RESISTANCE
From junction to ambient
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified
Collector cut–off current
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 15V
Emitter cut–off current
I
C
= 0; V
EB
= 3 V
I
C
= 0; V
EB
= 4.5V
Saturation voltages
I
C
= 10 mA; I
B
= 1 mA
Collector capacitance at f = 100 KHz
Emitter guarded
I
E
= 0; V
CB
= 5V
Emitter capacitance at f = 100 KHz
Emitter guarded
I
C
= 0; V
EB
= 0.5V
D.C. current gain
I
C
= 0.1
µA;
V
CE
= 5 V
I
C
= 1.0 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
Small signal current gain
I
C
= 1 mA; V
CE
= 5V; f = 1 KHz
Transition frequency at f = 20 MHz
I
C
= 500 µA; V
CE
= 5 V
Noise figure at R
S
= 10 kΩ
I
C
= 100
µA;
V
CE
= 5 V
f = 10 Hz to 15.7 Hz
*FR-5 Board = 1.0 × 0.75 × 0.62 in.
5088
5089
max.
max.
max.
max.
max.
max.
35
30
30 V
25 V
4.5
V
50
mA
225
mW
–55 to +150 ° C
150
°C
R
th j–a
417
°C/W
5088
5089
I
CBO
<
<
<
<
<
<
50
–
50
–
500
800
– nA
50 nA
– nA
100 nA
mV
mV
I
EBO
V
CEsat
V
BEsat
C
cb
<
4.0
pF
C
eb
h
FE
h
FE
h
FE
h
fe
f
T
N
F
<
300-900
350
300
350-1400
>
<
3.0
10
pF
400-1200
450
400
450-1800
>
>
50
MHz
2.0 dB
Continental Device India Limited
Data Sheet
Page 2 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com
www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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