Semiconductor
SUT462N
Epitaxial planar NPN/PNP silicon transistor
Descriptions
•
Complex type bipolar transistor
Features
•
Reduce quantity of parts and mounting cost
•
High collector power dissipation : P
C
=300mW(Max.)
•
Both 2SA1980 chip and 2SC5343 chip in SOT-26 Package
Ordering Information
Type NO.
SUT462N
Marking
3X
Package Code
SOT-26
Outline Dimensions
unit :
mm
2.60~3.00
0.95 Typ.
1.50~1.70
6
5
4
0.95 Typ.
1
2
3
Tr1
0.45 Max.
Tr2
2.80~3.00
•
Equivalent Circuit
4
5
6
3
2
1
1.00~1.20
PIN Connections
0.19 Max.
0.40 Min.
0.10 Max.
1.
2.
3.
4.
5.
Collector 1
Base 2
Emitter 2
Collector 2
Base 1
6.
Emitter 1
KSD-T5P002-000
1
SUT462N
Absolute Maximum Ratings
[Tr1, Tr2]
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
※:
Total rating
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
※
T
J
T
stg
Rating
Tr1
Tr2
60
50
5
150
300
150
-55~150
-50
-50
-5
-150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
[Tr1]
Characteristic
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
(Ta=25°C)
Symbol
BV
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Test Condition
I
C
=1mA, I
B
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=2mA
V
CE
=10V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
Min. Typ. Max.
50
-
-
120
-
-
-
-
-
-
-
-
-
0.65
200
2
-
0.1
0.1
400
0.25
-
-
-
Unit
V
µA
µA
-
V
V
MHz
pF
Electrical Characteristics
[Tr2]
Characteristic
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
(Ta=25°C)
Symbol
BV
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Test Condition
I
C
=-1mA, I
B
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-6V, I
C
=-2mA
V
CE
=-10V, I
C
=-10mA
V
CB
=-10V, I
E
=0, f=1MHz
Min. Typ. Max.
-50
-
-
120
-
-
-
-
-
-
-
-
-
-0.65
200
4
-
-0.1
-0.1
400
-0.3
-
-
-
Unit
V
µA
µA
-
V
V
MHz
pF
KSD-T5P002-000
2
SUT462N
Electrical Characteristic Curves
[Tr1]
Fig. 1 I
C
-V
BE
Fig. 2 I
C
-V
CE
㎂
Fig. 3 h
FE
-I
C
Fig. 4 V
CE(sat)
-I
C
[Tr2]
Fig. 1 I
C
-V
BE
Fig. 2 I
C
-V
CE
㎂
KSD-T5P002-000
3
SUT462N
Electrical Characteristic Curves
Fig. 3 h
FE
-I
C
Fig. 4 V
CE(sat)
-I
C
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
KSD-T5P002-000
4
嵌入式系统
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