电子工程世界电子工程世界电子工程世界

产品描述

搜索
 

MCP6002M/TR

器件型号:MCP6002M/TR
器件类别:模拟混合信号IC    低功耗运放   
厂商:HGSEMI(华冠)

广东华冠半导体有限公司是一家专业从事半导体器件的研发、封装、测试和销售为一体的高新技术企业。公司建立了国际先进水平的半导体分立器件和集成电路封装测试生产线,有丰富的半导体器件的设计、封装、测试行业经验和技术。公司与美国,台湾等行业一流企业建立了长期战略合作关系,建立研发中心,组建专业的技术开发团队,从事新产品、新技术开发。公司研发项目涵盖集成电路的研发、设计、制造以及新产品的合作开发等诸多领域。公司主营通用集成电路和分立器件的研发、制造、销售,产品主要应用于通讯、LED照明、开关电源、汽车电子、仪器仪表、家用电器等。HGSEMI品牌是华冠公司自主品牌,自主品牌的建立更有利于我们对客户的服务,推动公司的发展,成为中国半导体产业的领先服务商!

公司秉承“客户第一、互动双赢”的经营信念,竭诚与广大客户建立长期互惠合作关系,共创行业美好未来。

厂商官网:http://www.hgsemi.net/
下载文档

MCP6002M/TR产品介绍

MCP6001/2/4
1 MHz Bandwidth Low Power Op Amp
Features
Available in SC-70-5 and SOT-23-5 packages
1 MHz Gain Bandwidth Product (typ.)
Rail-to-Rail Input/Output
Supply Voltage: 1.8V to 5.5V
Supply Current: I
Q
= 100 µA (typ.)
90° Phase Margin (typ.)
Temperature Range:
- Industrial: -40°C to +85°C
- Extended: -40°C to +125°C
• Available in Single, Dual and Quad Packages
Description
The Microchip Technology Inc. MCP6001/2/4 family of
operational amplifiers (op amps) is specifically
designed for general-purpose applications. This family
has a 1 MHz gain bandwidth product and 90° phase
margin (typ.). It also maintains 45° phase margin (typ.)
with 500 pF capacitive load. This family operates from
a single supply voltage as low as 1.8V, while drawing
100 µA (typ.) quiescent current. Additionally, the
MCP6001/2/4 supports rail-to-rail input and output
swing, with a common mode input voltage range of
V
DD
+ 300 mV to V
SS
- 300 mV. This family of opera-
tional amplifiers is designed with Microchip’s
advanced CMOS process.
The MCP6001/2/4 family is available in the industrial
and extended temperature ranges. It also has a power
supply range of 1.8V to 5.5V.
Applications
Automotive
Portable Equipment
Photodiode Pre-amps
Analog Filters
Notebooks and PDAs
Battery-Powered Systems
Package Types
MCP6001
SC-70-5, SOT-23-5
V
OUT
1
V
SS
2
V
IN
+ 3
-
+
MCP6002
PDIP, SOIC, MSOP
V
OUTA
1
V
INA
– 2
4 V
IN
V
INA
+ 3
V
SS
4
A
- +
B
+ -
8 V
DD
7 V
OUTB
6 V
INB
5 V
INB
+
5 V
DD
Available Tools
Spice Macro Models (at www.microchip.com)
FilterLab Software (at www.microchip.com)
®
Typical Application
V
DD
V
IN
+
MCP6001
-
V
SS
R
1
R
1
-
Gain
=
1
+ -----
R
2
V
OUT
MCP6001R
SOT-23-5
V
OUT
1
V
DD
2
V
IN
+ 3
-
+
+
-
5 V
SS
MCP6004
PDIP, SOIC, TSSOP
V
OUTA
1
V
INA
– 2
14 V
OUTD
A
- + +D - 13 V
IND
12 V
IND
+
11 V
SS
10 V
INC
+
- + + -
B
C
9 V
INC
8 V
OUTC
4 V
IN
MCP6001U
SOT-23-5
V
IN
+ 1
V
SS
2
V
IN
– 3
5 V
DD
V
INA
+ 3
V
DD
4
V
INB
+ 5
V
INB
– 6
R
2
V
REF
4 V
OUT
V
OUTB
7
Non-Inverting Amplifier
http://www.hgsemi.com.cn
1
2016 APR
MCP6001/2/4
1.0
ELECTRICAL
CHARACTERISTICS
PIN FUNCTION TABLE
Name
Function
Absolute Maximum Ratings †
V
DD
- V
SS
.........................................................................7.0V
All Inputs and Outputs ...................... V
SS
-0.3V to V
DD
+0.3V
Difference Input Voltage ....................................... |V
DD
- V
SS
|
Output Short Circuit Current ..................................continuous
Current at Input Pins ....................................................±2 mA
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature (T
J
) .......................... +150°C
ESD Protection On All Pins (HBM;MM)
............... ≥
4 kV; 200V
† Notice:
Stresses above those listed under “Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
V
IN
+, V
INA
+, V
INB
+, V
INC
+,
V
IND
+
V
IN
–, V
INA
–, V
INB
–, V
INC
–,
V
IND
V
DD
V
SS
V
OUT
, V
OUTA
, V
OUTB
,
V
OUTC
, V
OUTD
Non-inverting Inputs
Inverting Inputs
Positive Power Supply
Negative Power Supply
Outputs
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, R
L
= 10 kΩ
to V
DD
/2, and V
OUT
~ V
DD
/2.
Parameters
Input Offset
Input Offset Voltage
Input Offset Drift with Temperature
Power Supply Rejection
Input Bias Current and Impedance
Input Bias Current:
Industrial Temperature
Extended Temperature
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common Mode Input Range
Common Mode Rejection Ratio
Open-Loop Gain
DC Open-Loop Gain (large signal)
Output
Maximum Output Voltage Swing
Output Short-Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Sym
V
OS
∆V
OS
/∆T
A
PSRR
I
B
I
B
I
B
I
OS
Z
CM
Z
DIFF
V
CMR
CMRR
A
OL
Min
-7.0
V
SS
0.3
60
88
Typ
±2.0
86
±1.0
19
1100
±1.0
10
13
||6
10
13
||3
76
112
Max
+7.0
V
DD
+ 0.3
Units
mV
µV/°C
dB
pA
pA
pA
pA
Ω||pF
Ω||pF
V
dB
dB
Conditions
V
CM
= V
SS
T
A
= -40°C to +125°C,
V
CM
= V
SS
V
CM
= V
SS
T
A
= +85°C
T
A
= +125°C
V
CM
= -0.3V to 5.3V, V
DD
= 5V
V
OUT
= 0.3V to V
DD
- 0.3V,
V
CM
= V
SS
V
DD
= 5.5V
V
DD
= 1.8V
V
DD
= 5.5V
V
OL
, V
OH
I
SC
V
SS
+ 25
±6
±23
100
V
DD
25
5.5
170
mV
mA
mA
V
µA
V
DD
I
Q
1.8
50
I
O
= 0, V
DD
= 5.5V, V
CM
= 5V
http://www.hgsemi.com.cn
2
2016 APR
MCP6001/2/4
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8 to 5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
V
DD
/2, R
L
= 10 kΩ to V
DD
/2, and C
L
= 60 pF.
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
E
ni
e
ni
i
ni
6.1
28
0.6
µVp-p
nV/√Hz
fA/√Hz
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
GBWP
PM
SR
1.0
90
0.6
MHz
°
V/µs
G = +1
Sym
Min
Typ
Max
Units
Conditions
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.8V to +5.5V, and V
SS
= GND.
Parameters
Temperature Ranges
Industrial Temperature Range
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SC70
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC (150 mil)
Thermal Resistance, 8L-SOIC (208 mil)
Thermal Resistance, 8L-MSOP
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Note:
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
331
256
85
163
118
206
70
120
100
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
T
A
T
A
-40
-40
-40
-65
+85
+125
+125
+150
°C
°C
°C
°C
(Note)
Sym
Min
Typ
Max
Units
Conditions
The industrial temperature devices operate over this extended temperature range, but with reduced perfor-
mance. In any case, the internal Junction Temperature (T
J
) must not exceed the Absolute Maximum
specification of +150°C.
http://www.hgsemi.com.cn
3
2016 APR
MCP6001/2/4
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
V
DD
/2,
R
L
= 10 kΩ to V
DD
/2, and C
L
= 60 pF.
22%
100
Percentage of Occurrences
20%
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
1225 Samples
V
CM
= V
SS
PSRR, CMRR (dB)
90
PSRR (V
CM
= V
SS
)
80
CMRR (V
CM
= -0.3V to +5.3V)
0
1
2
3
4
5
6
-7
-6
-5
-4
-3
-2
-1
7
70
-50
-25
0
25
50
75
100
125
Input Offset Voltage (mV)
Ambient Temperature (°C)
FIGURE 2-1:
Histogram.
100
90
Input Offset Voltage
FIGURE 2-4:
Temperature.
120
100
CMRR, PSRR vs. Ambient
V
CM
= V
SS
0
-30
-60
Phase
-90
-120
Gain
V
CM
= V
SS
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
Open Loop Gain (dB)
80
70
60
50
40
30
20
1.E+01
1.E+02
PSRR-
PSRR+
80
60
40
20
0
CMRR
-150
-180
-210
10M
1.E+03
1.E+04
1.E+05
10
100
1k
10k
100k
-20
0.1
1
10
100
1k
10k
100k
1M
Frequency (Hz)
Frequency (Hz)
FIGURE 2-2:
Frequency.
14%
PSRR, CMRR vs.
FIGURE 2-5:
Frequency.
55%
50%
45%
40%
35%
30%
25%
20%
15%
10%
5%
0%
Open-Loop Gain, Phase vs.
Percentage of Occurrences
12%
10%
8%
6%
4%
2%
0%
Percentage of Occurrences
1230 Samples
V
DD
= 5.5 V
V
CM
= V
DD
T
A
= +85°C
605 Samples
V
DD
= 5.5 V
V
CM
= V
DD
T
A
= +125°C
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
Input Bias Current (pA)
Input Bias Current (pA)
FIGURE 2-3:
Histogram.
Input Bias Current at +85°C
FIGURE 2-6:
Histogram.
Input Bias Current at +125°C
http://www.hgsemi.com.cn
4
2016 APR
1500
10
12
14
16
18
20
22
24
26
28
30
0
2
4
6
8
Open Loop Phase (°)
PSRR, CMRR (dB)
MCP6001/2/4
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
V
DD
/2,
R
L
= 10 kΩ to V
DD
/2, and C
L
= 60 pF.
1,000
18%
Input Noise Voltage Density
(nV/ Hz)
Percentage of Occurrences
16%
14%
12%
10%
8%
6%
4%
2%
0%
1225 Samples
V
CM
= V
SS
T
A
= -40°C to +125°C
100
E
ni
= 6.1 µV
P-P
,
10
0.1
1.E-01
1.E+00
f = 0.1 to 10 Hz
10
1.E+01
0
2
4
6
-8
-6
-4
-2
8
10
5.0
-12
1
100
1.E+02
1k
1.E+03
10k
1.E+04
100k
1.E+05
Frequency (Hz)
-10
Input Offset Voltage Drift (µV/°C)
FIGURE 2-7:
vs. Frequency.
0
Input Noise Voltage Density
FIGURE 2-10:
Histogram.
200
Input Offset Voltage Drift
Input Offset Voltage (µV)
Input Offset Voltage (µV)
-100
-200
-300
-400
-500
-600
-700
V
DD
= 1.8V
150
100
50
0
-50
-100
-150
-200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.5
V
CM
= V
SS
V
DD
= 1.8V
V
DD
= 5.5V
T
A
= -40°C
T
A
= +25°C
T
A
= +85°C
T
A
= +125°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-0.4
-0.2
Common Mode Input Voltage (V)
2.2
Output Voltage (V)
FIGURE 2-8:
Input Offset Voltage vs.
Common Mode Input Voltage at V
DD
= 1.8V.
0
V
DD
= 5.5V
FIGURE 2-11:
Output Voltage.
35
30
25
20
15
10
5
0
-50
-25
0
-I
SC
, V
DD
= 1.8V
+I
SC
, V
DD
= 1.8V
Input Offset Voltage vs.
-100
-200
-300
-400
-500
-600
T
A
= -40°C
T
A
= +25°C
T
A
= +85°C
T
A
= +125°C
Output Short Circuit Current
(mA)
Input Offset Voltage (µV)
+I
SC
, V
DD
= 5.5V
-I
SC
, V
DD
= 5.5V
-700
-0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
25
50
75
100
125
Common Mode Input Voltage (V)
Ambient Temperature (°C)
FIGURE 2-9:
Input Offset Voltage vs.
Common Mode Input Voltage at V
DD
= 5.5V.
FIGURE 2-12:
Output Short-Circuit Current
vs. Ambient Temperature.
http://www.hgsemi.com.cn
5
2016 APR
12
小广播

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区知春路23号集成电路设计园量子银座1305 电话:(010)82350740 邮编:100191

电子工程世界版权所有 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2021 EEWORLD.com.cn, Inc. All rights reserved