SUM40N05-19L
New Product
Vishay Siliconix
N-Channel 55-V (D-S), 175_C MOSFET, Logic Level
FEATURES
PRODUCT SUMMARY
V
(BR)DSS
(V)
55
r
DS(on)
(W)
0.019 @ V
GS
= 10 V
0.025 @ V
GS
= 4.5 V
I
D
(A)
40
35
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
APPLICATIONS
D
Automotive
- Full Injection Systems
- Wipers
- Door Modules
D
TO-263
DRAIN connected to TAB
G
D S
Top View
Ordering Information: SUM40N05-19L
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current, Single Pulse
Avalanche Energy, Single Pulse
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
c
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
55
"20
40
28
80
30
45
65
a
3.1
b
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
b
Junction-to-Case
Notes:
a.
b.
See SOA curve for voltage derating.
Surface Mounted on FR4 Board, t
v
10 sec.
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Symbol
R
thJA
R
thJC
Limit
40
2.3
Unit
_C/W
Document Number: 72386
S-31922—Rev. A, 15-Sep-03
1
SUM40N05-19L
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
DS
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 55 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
g
On-State Drain Current
a
I
DSS
I
D(on)
V
DS
= 55 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 55 V, V
GS
= 0 V, T
J
= 175_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State
Drain Source On State Resistance
a
r
DS( )
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 20 A, T
J
= 175_C
V
GS
= 4.5 V, I
D
= 15 A
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
0.020
50
40
0.0155
0.019
0.033
0.040
0.025
S
W
55
1.0
2.0
3.0
"100
1
50
250
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 25 V, R
L
= 0.3
W
I
D
]
35 A, V
GEN
= 10 V, R
G
= 2.5
W
f = 1.0 MHz
V
DS
= 25 V, V
GS
= 10 V, I
D
= 35 A
,
,
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
885
185
80
10.5
4
4.8
5.0
5
18
20
100
8
30
30
150
ns
W
13
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
s
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 35 A, di/dt = 100 A/ms
,
m
I
F
= 35 A, V
GS
= 0 V
1.0
25
1.5
0.019
35
80
1.5
40
2.5
0.05
A
V
ns
A
mC
Notes:
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 72386
S-31922—Rev. A, 15-Sep-03
SUM40N05-19L
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
100
V
GS
= 10 thru 6 V
80
5V
I
D
- Drain Current (A)
60
4V
40
I
D
- Drain Current (A)
60
125_C
40
80
100
T
C
= - 55_C
25_C
Transfer Characteristics
20
3V
20
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
0
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
Transconductance
60
50
g
fs
- Transconductance (S)
40
30
20
10
0
0
20
40
60
80
100
T
C
= - 55_C
r
DS(on)
- On-Resistance (
Ω
)
0.03
0.04
On-Resistance vs. Drain Current
25_C
125_C
V
GS
= 4.5 V
0.02
V
GS
= 10 V
0.01
0.00
0
20
40
60
80
100
I
D
- Drain Current (A)
1500
I
D
- Drain Current (A)
20
V
DS
= 25 V
I
D
= 35 A
Capacitance
Gate Charge
1200
C - Capacitance (pF)
C
iss
900
V
GS
- Gate-to-Source Voltage (V)
15
10
600
C
oss
300
C
rss
0
11
22
5
0
0
33
44
55
0
10
20
30
40
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Document Number: 72386
S-31922—Rev. A, 15-Sep-03
www.vishay.com
3
SUM40N05-19L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.4
2.0
r
DS(on)
- On-Resistance (
W)
(Normalized)
1.6
1.2
0.8
0.4
0.0
- 50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 20 A
I
S
- Source Current (A)
100
Source-Drain Diode Forward Voltage
T
J
= 150_C
10
T
J
= 25_C
- 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
1.5
T
J
- Junction Temperature (_C)
V
SD
- Source-to-Drain Voltage (V)
70
Drain Source Breakdown vs.
Junction Temperature
66
V
(BR)DSS
(V)
I
D
= 10 mA
62
58
54
50
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (_C)
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4
Document Number: 72386
S-31922—Rev. A, 15-Sep-03
SUM40N05-19L
New Product
THERMAL RATINGS
Vishay Siliconix
50
Drain Current vs. Case Temperature
200
100
Safe Operating Area
Limited by r
DS(on)
10
ms
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
100
ms
10
1 ms
10 ms
1
T
C
= 25_C
Single Pulse
dc, 100 ms
30
20
10
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature (_C)
0.1
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
Square Wave Pulse Duration (sec)
10
-1
1
Document Number: 72386
S-31922—Rev. A, 15-Sep-03
www.vishay.com
5
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