Freescale Semiconductor
Technical Data
Document Number: MRF8P23160WH
Rev. 0, 12/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for base station applications with wide instantaneous bandwidth
requirements covering frequencies from 2300 to 2400 MHz.
•
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQA
= 600 mA, V
GSB
= 1.2 Vdc, P
out
= 30 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
2300 MHz
2350 MHz
2400 MHz
G
ps
(dB)
13.9
14.1
13.8
η
D
(%)
37.1
38.3
38.3
Output PAR
(dB)
7.9
7.7
7.4
ACPR
(dBc)
--31.0
--32.2
--33.1
MRF8P23160WHR3
MRF8P23160WHSR3
2300-
-2400 MHz, 30 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 30 Vdc, 2350 MHz, 144 Watts CW
(1)
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 3 dB Compression Point
≃
190 Watts
(2)
Features
•
Designed for Wide Instantaneous Bandwidth Applications
•
Designed for Wideband Applications that Require 100 MHz Signal Bandwidth
•
Production Tested in a Symmetrical Doherty Configuration
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Large--Signal Load--Pull Parameters and Common Source
S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
•
Designed for Digital Predistortion Error Correction Systems
•
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 14.
•
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 14.
CASE 465M-
-01, STYLE 1
NI-
-780-
-4
MRF8P23160WHR3
CASE 465H-
-02, STYLE 1
NI-
-780S-
-4
MRF8P23160WHSR3
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(3,4)
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Figure 1. Pin Connections
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
125
225
129
0.48
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
3. Continuous use at maximum temperature will affect MTTF.
4. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
©
Freescale Semiconductor, Inc., 2011. All rights reserved.
MRF8P23160WHR3 MRF8P23160WHSR3
1
RF Device Data
Freescale Semiconductor, Inc.
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 30 W CW, 28 Vdc, I
DQA
= 600 mA, V
GGB
= 2.4 Vdc, 2350 MHz
Case Temperature 101°C, 130 W CW
(3)
, 28 Vdc, I
DQA
= 600 mA, V
GGB
= 2.4 Vdc, 2350 MHz
Symbol
R
θJC
Value
(1,2)
0.69
0.43
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
B
IV
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 252
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DA
= 600 mAdc)
Fixture Gate Quiescent Voltage
(4,5)
(V
DD
= 28 Vdc, I
DA
= 600 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.0 Adc)
V
GS(th)
V
GSA(Q)
V
GGA(Q)
V
DS(on)
1.2
—
4.1
0.1
1.9
2.8
5.5
0.24
2.7
—
7.1
0.3
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
5
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(6,7,8)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 600 mA, V
GSB
= 1.2 Vdc, P
out
=
30 W Avg., f = 2320 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured on 3.84 MHz Channel Bandwidth @
±5
MHz Offsett.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
G
ps
η
D
PAR
ACPR
12.0
32.0
7.2
—
14.1
36.5
7.8
--32.2
15.0
—
—
--28.0
dB
%
dB
dBc
Typical Broadband Performance
(6,8)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 600 mA, V
GSB
= 1.2 Vdc,
P
out
= 30 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
2300 MHz
2350 MHz
2400 MHz
G
ps
(dB)
13.9
14.1
13.8
η
D
(%)
37.1
38.3
38.3
Output PAR
(dB)
7.9
7.7
7.4
ACPR
(dBc)
--31.0
--32.2
--33.1
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. V
GG
= 2.0 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistor divider network on the board. Refer to Test Fixture
Layout.
6. V
DDA
and V
DDB
must be tied together and powered by a single DC power supply.
7. Part internally matched both on input and output.
8. Measurement made with device in a Symmetrical Doherty configuration
(continued)
MRF8P23160WHR3 MRF8P23160WHSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(1)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 600 mA, V
GSB
= 1.2 Vdc,
2300--2400 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
P
out
@ 3 dB Compression Point
(3)
IMD Symmetry @ 28 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 100 MHz Bandwidth @ P
out
= 30 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
(2)
P1dB
P3dB
IMD
sym
—
—
—
150
(2)
190
102
—
—
—
W
W
MHz
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
150
0.6
0.015
0.017
—
—
—
—
MHz
dB
dB/°C
dB/°C
1. Measurement made with device in a Symmetrical Doherty configuration.
2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
3. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
MRF8P23160WHR3 MRF8P23160WHSR3
RF Device Data
Freescale Semiconductor, Inc.
3
C18
R3
C19
C14
R6
C8
C10
C3
Z1
CUT OUT AREA
C6
C
C12
C4
P
C5
C11
C15
C17
R5
R7 C9
C20
C23
C13
C22
C1
R1
C2
C7
R4
V
GGB
C21
Note: V
DDA
and V
DDB
must be tied together and powered by a single DC power supply.
Figure 2. MRF8P23160WHR3(WHSR3) Test Circuit Component Layout
Table 5. MRF8P23160WHR3(WHSR3) Test Circuit Component Designations and Values
Part
C1, C4, C5
C2, C3
C6
C7
C8, C9, C12, C13
C10, C11
C14, C15
C16, C17, C18, C19,
C20, C21
C22, C23
R1
R2, R3, R4, R5
R6, R7
Z1
PCB
Description
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8.2 pF Chip Capacitors
330 nF, 50 V Chip Capacitors
10
μF,
100 V Chip Capacitors
220
μF,
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50
Ω,
10 W Chip Resistor
390
Ω,
1/4 W Chip Resistors
4.75
Ω,
1/4 W Chip Resistors
2300--2700 MHz 90°, 3 dB Chip Hybrid Coupler
0.020″,
ε
r
= 3.5
Part Number
ATC600F0R2BT250XT
ATC600F0R3BT250XT
ATC600F3R3BT250XT
ATC600F5R6BT250XT
ATC600F6R8BT250XT
ATC600F8R2BT250XT
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EEV--FK2A221M
CW12010T0050GBK
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CRCW12064R75FKEA
1P603S
RF35A2
Manufacturer
ATC
ATC
ATC
ATC
ATC
ATC
TDK
TDK
Panasonic--ECG
ATC
Vishay
Vishay
Anaren
Taconic
MRF8P23160WHR3 MRF8P23160WHSR3
4
RF Device Data
Freescale Semiconductor, Inc.
V
DDB
V
DDA
R2
V
GGA
C16
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
--2
ACPR (dBc)
--2.2
--2.4
--2.6
--2.8
--3
PARC (dB)
--23
--25
--27
--29
--31
--33
--35
ACPR (dBc)
η
D
,
DRAIN EFFICIENCY (%)
V
DD
= 28 Vdc, P
out
= 30 W (Avg.), I
DQA
= 600 mA
14.8 V
GSB
= 1.2 Vdc, Single--Carrier W--CDMA
14.6
G
ps
, POWER GAIN (dB)
14.4
14.2
14
13.8
13.6
13.4 3.84 MHz Channel Bandwidth
13.2 Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
13
2290 2305 2320 2335 2350
PARC
ACPR
G
ps
15
41
39
η
D
37
35
33
--30
--30.4
--30.8
--31.2
--31.6
2365
2380
2395
--32
2410
f, FREQUENCY (MHz)
Figure 3. Single-
-Carrier Output Peak- -Average Ratio Compression
-to-
(PARC) Broadband Performance @ P
out
= 30 Watts Avg.
--20
IM3--U
--30
--40
--50
--60
--70
IM7--L
IM7--U
IM3--L
IM5--L
IM5--U
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, P
out
= 28 W (PEP)
I
DQA
= 600 mA, V
GSB
= 1.2 Vdc
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
1
10
TWO--TONE SPACING (MHz)
100
300
Figure 4. Intermodulation Distortion Products
versus Two-
-Tone Spacing
15
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
14.5
G
ps
, POWER GAIN (dB)
14
13.5
13
12.5
12
1
0
--1
--2
--3
--4
--5
--1 dB = 15 W
--2 dB = 24.5 W
--3 dB = 36 W
10
20
30
40
50
60
PARC
60
50
40
η
D
ACPR
30
20
10
0
V
DD
= 28 Vdc, I
DQA
= 600 mA, V
GSB
= 1.2 Vdc, f = 2350 MHz
Single--Carrier W--CDMA, 3.84 MHz, Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
G
ps
P
out
, OUTPUT POWER (WATTS)
Figure 5. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8P23160WHR3 MRF8P23160WHSR3
RF Device Data
Freescale Semiconductor, Inc.
5
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