Data Sheet No. PD60184 rev F
For new designs, we recommend
IR’s product IR2166
IR2167(S) & PbF
Features
PFC BALLAST CONTROL IC
•
•
•
•
•
•
•
•
•
Capacitive Mode Protection
Brown-Out Protection
Dynamic Restart
Automatic Restart for Lamp Exchange
Thermal Overload Protection
Programmable Deadtime
Internal 15.6V Zener Clamp Diode on VCC
Micropower Startup (150µA)
Latch Immunity and ESD Protection
•
PFC, Ballast Control and Half Bridge Driver in One IC
•
Critical Conduction Mode Boost Type PFC
•
No PFC Current Sense Resistor Required
•
Programmable Preheat Time & Frequency
•
Programmable Ignition Ramp
•
Programmable Over-Current
•
Internal Fault Counter
•
End-of-Life Protection
•
Lamp Filament Sensing & Protection
Description
The IR2167 is a fully integrated, fully protected 600V ballast control IC designed to
drive all types of fluorescent lamps. PFC circuitry provides for high PF, low THD and
DC Bus regulation. Externally programmable features such as preheat time & fre-
quency, ignition ramp characteristics, and running mode operating frequency provide a
high degree of flexibility for the ballast design engineer. Comprehensive protection
features such as protection from failure of a lamp to strike, filament failures, low AC
line conditions, thermal overload, or lamp failure during normal operation, as well as
an automatic restart function, have been included in the design. The heart of the
ballast control section is a variable frequency oscillator with externally programmmable
deadtime. Precise control of a 50% duty cycle is accomplished using a T-flip-flop.
Packages
20-Lead SOIC
(wide body)
20-Lead
PDIP
Typical Application Diagram
+ Rectified AC Line
L1
D1
R5
R4
C1
VDC
HO
R7
M2
VS
C
BS
D
BS
C
VCC
C5
L2
R
SUPPLY
1
2
3
20
19
18
C
BUS
C
PH
C
RAMP
RT
R2
CT
C
OC
R
DT
R
PH
R
RUN
CPH
RPH
VB
IR2167
RT
4
5
6
7
8
9
17
16
15
14
13
12
11
VCC
RUN
COM
C
SNUBBER
CT
LO
R8
M3
D3
R11
R12
C7
DT
CS
R9
D2
R
OC
C
COMP
OC
SD
R10
D4
COMP
R6
PFC
C3
ZX
10
VBUS
D5
C4
R3
C2
R
CS
D6
C6
R13
R1
M1
- Rectified AC Line
Please note that this datasheet contains advance information that could change before the product is released to production.
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1
IR2167(S) & PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
LO
V
PFC
I
OMAX
I
RT
V
CT
V
DC
I
CPH
I
RPH
I
RUN
I
DT
V
CS
I
CS
I
OC
I
SD
V
BUS
I
ZX
I
COMP
I
CC
dV/dt
P
D
Rth
JA
T
J
T
S
T
L
Definition
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side output voltage
PFC gate driver output voltage
Max. allowable output current (HO,LO,PFC) due to external
power transistor miller effect
RT pin current
CT pin voltage
VDC pin voltage
CPH pin current
RPH pin current
RUN pin current
Deadtime pin current
Current sense pin voltage
Current sense pin current
Over-current threshold pin current
Shutdown pin current
DC bus sensing input voltage
PFC inductor current, zero crossing detection input
PFC error amplifier compensation current
Supply current (note 1)
Allowable offset supply voltage slew ratet
Package power dissipation @ T
A
≤
+25°C
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
(20 lead PDIP)
(20 lead SOIC)
(20 lead PDIP)
(20 lead SOIC)
Min.
-0.3
V
B
- 25
V
S
- 0.3
-0.3
-0.3
-500
-5
-0.3
-0.3
-5
-5
-5
-5
-0.3
-5
-5
-5
-0.3
-5
-5
-20
-50
—
—
—
—
-55
-55
—
Max.
625
V
B
+ 0.3
V
B
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
500
5
6.5
V
CC
+ 0.3
5
5
5
5
6.5
5
5
5
V
CC
5
5
20
50
1.50
1.25
85
90
150
150
300
Units
V
mA
V
mA
V
mA
V
mA
V/ns
W
°C/W
°C
2
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IR2167(S) & PbF
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. All voltage parameters are absolute
voltages referenced to COM, all currents are defined positive into any lead
Symbol
V
BS
V
S
V
CC
I
CC
V
DC
I
SD
I
CS
C
T
R
DT
I
RT
I
RPH
I
RUN
I
ZX
T
J
Definition
High side floating supply voltage
Steady state high side floating supply offset voltage
Supply voltage
Supply current
V
DC
lead voltage
Shutdown lead current
Current sense lead current
C
T
lead capacitance
Deadtime resistance
R
T
lead current (Note 3)
RPH lead current (Note 3)
RUN lead current (Note 3)
Zero crossing detection lead current
Junction temperature
Min.
V
CC
- 0.7
-3.0
V
CCUV+
Note 2
0
-1
-1
220
1.0
-500
0
0
-1
-40
Max.
V
CLAMP
600
V
CLAMP
10
VCC
1
1
—
Units
V
mA
V
mA
pF
kΩ
uA
mA
o
—
-50
450
450
1
125
C
Electrical Characteristics
V
CC
= V
BS
= V
BIAS
= 14V +/- 0.25V, R
T
= 16.9kΩ, C
T
= 470 pF, RPH and RUN leads no connection, V
CPH
= 0.0V,
R
DT
= 6.1kΩ, R
OC
= 20.0kΩ, V
CS
= 0.5V, V
SD
= 2.0V, C
L
= 1000pF, T
A
= 25
o
C unless otherwise specified.
Supply Characteristics
Symbol Definition
V
CCUV+
V
UVHYS
I
QCCUV
I
QCCFLT
I
QCC
I
CC50K
V
CLAMP
Note 2:
Note 3:
V
CC
supply undervoltage positive going
threshold
V
CC
supply undervoltage lockout hysteresis
UVLO mode quiescent current
Fault-mode quiescent current
Quiescent V
CC
supply current
V
CC
supply current, f = 48kHz
V
CC
zener clamp voltage
Min.
10.4
2.0
Typ.
11.4
2.1
250
100
3.3
5.0
15.6
Max.
12.5
Units Test Conditions
V
CC
rising from 0V
V
—
—
1.9
4.0
14.0
2.1
400
350
4.5
µA
mA
6.0
16.5
V
V
CC
< V
CCUV-
SD = 5V, CS = 2V or
Tj > T
SD
R
T
no connection, C
T
connected to COM
I
CC
= 10mA
Sufficient current should be supplied to the VCC pin to keep the internal 15.6V zener clamp diode on this pin
regulating its voltage.
Due to the fact that the RT pin is a voltage-controlled current source, the total RT pin current is the sum of all
of the parallel current sources connected to that pin. During the preheat mode, the total current flowing out
of the RT pin consists of the RPH pin current plus the current due to the RT resistor. During the run mode, the
total RT pin current consists of the RUN pin current plus the current due to the RT resistor.
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IR2167(S) & PbF
Electrical Characteristics (cont.)
V
CC
= V
BS
= V
BIAS
= 14V +/- 0.25V, R
T
= 16.9kΩ, C
T
= 470 pF, RPH and RUN leads no connection, V
CPH
= 0.0V,
R
DT
= 6.1kΩ, R
OC
= 20.0kΩ, V
CS
= 0.5V, V
SD
= 2.0V, C
L
= 1000pF, T
A
= 25
o
C unless otherwise specified.
Floating Supply Characteristics
Symbol Definition
I
QBS0
I
LK
Quiescent V
BS
supply current
Offset supply leakage current
Min.
—
—
Typ.
0
0
Max.
10.0
50
Units Test Conditions
µA
V
HO
= V
S
V
B
= V
S
= 600V
PFC Error Amplifier Characteristics
Symbol Definition
V
BUS
I
VBUS
gm
I
SOURCE
I
SINK
V
OH(EA)
V
0L(EA)
VBUS sense input threshold
VBUS sense input bias current
Error amplifier transconductance
Error amplifier output current sourcing
Error amplifier output current sinking
Error amplifier output voltage swing
(Hi state)
Error amplifier output voltage swing
(Lo state)
Min.
3.7
—
40
15
5
12.5
—
Typ.
4.0
—
90
30
30
13.5
0.25
Max.
4.3
0.1
130
50
50
14.5
0.4
Units Test Conditions
µmho
µA
V
V
µA
RUN mode operation
V
BUS
= 3V
V
BUS
= 5V
V
BUS
= 3V
V
BUS
= 5V
PFC Over Voltage Comparator
Symbol Definition
V
0V
Over voltage comparator threshold
Min.
4.0
Typ.
4.3
Max. Units Test Conditions
4.5
V
PFC Zero Current Detector
V
ZX
ZX lead comparator threshold voltage
V
ZXhys
ZX lead comparator hysterisis
V
ZXclamp+
ZX lead clamp voltage (high state)
1.7
400
6.0
2.0
300
7.5
2.3
300
9.0
V
mV
V
I
ZX
= 1mA
Oscillator, Ballast Control, I/O Characteristics
Symbol Definition
fosc
V
CT+
V
CT-
V
RT
t
DLO
t
DHO
Oscillator frequency
Upper C
T
ramp voltage threshold
Lower C
T
ramp voltage threshold
R
T
lead voltage
LO output deadtime
HO output deadtime
Min.
41
3.6
1.8
1.8
2.0
2.0
Typ.
44
4.0
2.0
2.0
2.4
2.4
Max.
47
4.4
2.2
2.2
2.6
2.6
Units Test Conditions
kHz
V
µsec
R
T
= 16.9kΩ, R
DT
=
6.1kΩ, C
T
=470pF
Preheat Characteristics
Symbol Definition
I
CPH+
CPH lead charging current
I
CPH-
CPH lead discharge current
V
CPHIGN
CPH lead lgnition mode threshold voltage
V
CPHRUN
CPH lead run mode threshold voltage
V
CPHCLMP
CPH lead clamp voltage
Min.
2.5
50
3.6
4.7
6
Typ.
2.8
175
4.1
5.1
10
Max. Units Test Conditions
3.2
350
4.4
5.5
11.5
µA
nA
V
I
CPH
= 1µA
V
CPH
= 0V
V
CPH
= 0V
4
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IR2167(S) & PbF
Electrical Characteristics (cont.)
V
CC
= V
BS
= V
BIAS
= 14V +/- 0.25V, R
T
= 16.9kΩ, C
T
= 470 pF, RPH and RUN leads no connection, V
CPH
= 0.0V,
R
DT
= 6.1kΩ, R
OC
= 20.0kΩ, V
CS
= 0.5V, V
SD
= 2.0V, C
L
= 1000pF, T
A
= 25
o
C unless otherwise specified.
RPH
Characteristics
Symbol Definition
I
RPHLK
Open circuit RPH lead leakage current
Min.
—
Typ.
0.1
Max.
—
Units Test Conditions
µA
V
RPH
=5V,V
RPH
=6V
RUN
Characteristics
Symbol Definition
I
RUNLK
Open circuit RUN lead leakage current
Min.
—
Typ.
0.1
Max.
—
Units Test Conditions
µA
V
RUN
= 5V
Protection Circuitry Characteristics
Symbol Definition
V
SDTH+
Rising shutdown lead threshold voltage
V
SDHYS
Shutdown lead threshold hysteresis
V
SDEOL+
Rising shutdown lead end-of-life threshold
voltage
V
SDEOL-
Falling shutdown lead end-of-life threshold
voltage
V
CSTH+
Over-current sense threshold voltage
V
CSTH-
Under-current sense threshold voltage
T
CS
Over-current sense propogation delay
#FAULT
Number of sequential over-current Fault
cycles
cycles before IC shuts down (IGN Mode)
V
VDC+
Low V
BUS
/rectified line input upper threshold
V
VDC-
Low V
BUS
/rectified line input lower threshold
T
SD
Thermal shutdown junction temperature
Min.
4.8
300
2.6
0.7
1.05
0.14
50
25
4.8
2.7
—
Typ.
5.25
150
3.0
1.0
1.2
0.23
350
50
5.2
3.1
160
Max.
5.4
100
3.4
1.3
1.35
0.28
550
75
5.7
3.5
—
Units Test Conditions
V
mV
V
nsec
Delay from CS to LO
4V < V
CPH
<5.1V,
cycles cycles @CS > 1.3V
V
o
C
Note 4
Gate Driver Output Characteristics
Symbol Definition
VOL
V
OH
tr
tf
Note 4:
Low level output voltage (PFC, LO or HO)
High level output voltage (PFC, LO or HO)
Turn-on rise time (PFC, LO or HO)
Turn-off fall time (PFC, LO or HO)
Min.
—
—
50
25
Typ.
0
0
85
45
Max.
100
100
200
100
Units Test Conditions
mV
nsec
Io = 0
V
BIAS
- V
O,
Io = 0
When the IC senses an overtemperature condition (Tj > 160ºC), the IC is latched off. In order to reset this
Fault Latch, the SD lead must be cycled high and then low, or the V
CC
supply to the IC must be cycled below
the falling undervoltage lockout threshold (V
CCUV-
).
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