MOSFET 100V P-Ch Enh FET 20Vgs -0.5A ID 625mW
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Diodes |
产品种类 Product Category | MOSFET |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | SOT-23-3 |
Number of Channels | 1 Channel |
Transistor Polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 100 V |
Id - Continuous Drain Current | - 500 mA |
Rds On - Drain-Source Resistance | 1.45 Ohms |
Vgs th - Gate-Source Threshold Voltage | - 4 V |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 1.8 nC |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Single |
Channel Mode | Enhancement |
系列 Packaging | Cut Tape |
系列 Packaging | MouseReel |
系列 Packaging | Reel |
Transistor Type | 1 P-Channel |
Forward Transconductance - Min | 1.2 S |
Fall Time | 3.3 ns |
Pd-功率耗散 Pd - Power Dissipation | 625 mW |
Rise Time | 2.1 ns |
工厂包装数量 Factory Pack Quantity | 3000 |
Typical Turn-Off Delay Time | 5.9 ns |
Typical Turn-On Delay Time | 1.6 ns |
单位重量 Unit Weight | 0.000282 oz |
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