AUTOMOTIVE GRADE
AUIRFS4310
AUIRFSL4310
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
D
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
100V
5.6m
7.0m
130A
75A
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
Base part number
AUIRFSL4310
AUIRFS4310
Package Type
TO-262
D
2
-Pak
S
G
D Pak
AUIRFS4310
2
G
TO-262
AUIRFSL4310
S
D
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFSL4310
AUIRFS4310
AUIRFS4310TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
130
92
75
550
300
2.0
± 20
980
See Fig.14,15, 22a, 22b
14
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount), D
2
Pak
Typ.
–––
–––
Max.
0.50
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-10-27
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
gfs
R
G
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
Min.
100
–––
–––
2.0
160
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
5.6
–––
–––
1.4
–––
–––
–––
–––
170
46
62
26
110
68
78
7670
540
280
650
–––
7.0
4.0
–––
–––
20
250
100
-100
250
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
0.064 –––
AUIRFS/SL4310
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
m V
GS
= 10V, I
D
= 75A
V
V
DS
= V
GS
, I
D
= 250µA
S V
DS
= 50V, I
D
= 75A
ƒ = 1.0MHz, open drain
V
DS
= 100V, V
GS
= 0V
µA
V
DS
= 100V,V
GS
= 0V,T
J
=125°C
nA
V
GS
= 20V
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
D
= 75A
nC
V
DS
= 80V
V
GS
= 10V
V
DD
= 65V
I
D
= 75A
ns
R
G
= 2.6
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
pF
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 80V
V
GS
= 0V, V
DS
= 0V to 80V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 75A,V
GS
= 0V
T
J
= 25°C
V
DD
= 85V
ns
T
J
= 125°C
I
F
= 75A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
720.1 –––
Typ. Max. Units
––– 130
–––
–––
45
55
82
120
3.3
550
1.3
68
83
120
180
–––
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Q
rr
I
RRM
t
on
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 75A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.35mH, R
G
= 25, I
AS
= 75A, V
GS
=10V. Part not recommended for use above this value.
I
SD
75A,
di/dt
550A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at T
J
approximately 90°C.
2
2015-10-27
AUIRFS/SL4310
1000
TOP
1000
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
10
4.5V
1
0.1
1
60µs PULSE WIDTH
Tj = 25°C
10
10
100
4.5V
60µs PULSE WIDTH
Tj = 175°C
10
100
0.1
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
3.0
Fig. 2
Typical Output Characteristics
ID = 75A
VGS = 10V
ID, Drain-to-Source Current
)
2.5
100
TJ = 175°C
2.0
1.5
10
TJ = 25°C
VDS = 50V
1.0
60µs PULSE WIDTH
1
3.0
4.0
5.0
6.0
7.0
8.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig. 3
Typical Transfer Characteristics
12000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig. 4
Normalized On-Resistance vs. Temperature
20
VGS, Gate-to-Source Voltage (V)
ID= 75A
VDS = 80V
VDS= 50V
VDS= 20V
10000
16
C, Capacitance (pF)
8000
Ciss
12
6000
8
4000
2000
4
Coss
Crss
1
10
100
0
0
0
40
80
120
160
200
240
280
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2015-10-27
1000.0
AUIRFS/SL4310
10000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
TJ = 175°C
100.0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100
100µsec
10.0
TJ = 25°C
1.0
10
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
1msec
10msec
DC
100
1000
0.1
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
140
120
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
120
Limited By Package
100
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
115
110
105
100
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fg 9.
Maximum Drain Current vs. Case Temperature
4.0
Fig 10.
Drain-to-Source Breakdown Voltage
2400
EAS, Single Pulse Avalanche Energy (mJ)
3.5
3.0
2000
12A
17A
BOTTOM
75A
TOP
ID
Energy (µJ)
2.5
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
100
120
1600
1200
800
400
0
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
4
Fig 12.
Maximum Avalanche Energy vs. Drain Current
2015-10-27
1
AUIRFS/SL4310
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.02
0.01
J
R
1
R
1
J
1
2
R
2
R
2
C
1
2
C
Ri (°C/W)
0.1962
0.2542
I
(sec)
0.00117
0.016569
0.01
Ci=
iRi
Ci=
iRi
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
Avalanche Current (A)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C
and Tstart =25°C (Single Pulse)
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14.
Avalanche Current vs. Pulse width
1000
EAR , Avalanche Energy (mJ)
800
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A
600
400
200
0
25
50
75
100
125
150
175
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 13, 14).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/
Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Starting TJ , Junction Temperature (°C)
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
2015-10-27
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