SMBTA06/MMBTA06
NPN Silicon AF Transistor
•
Low collector-emitter saturation voltage
•
Complementary type:
SMBTA 56 / MMBTA56 (PNP)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
3
1
2
Type
SMBTA06/MMBTA06
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Marking
s1G
Pin Configuration
1=B
2=E
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Symbol
R
thJS
3=C
Package
SOT23
Value
80
80
4
500
1
100
200
330
150
mW
°C
mA
A
mA
Unit
V
Peak collector current,
t
p
≤
10 ms
Base current
Peak base current
Total power dissipation-
T
S
≤
79 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
-65 ... 150
Value
≤
215
Unit
K/W
Junction - soldering point
1)
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2011-12-19
SMBTA06/MMBTA06
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
80
I
C
= 1 mA,
I
B
= 0
Unit
V
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0
V
(BR)CBO
V
(BR)EBO
I
CBO
80
4
-
-
-
-
µA
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 80 V,
I
E
= 0
V
CB
= 80 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
I
CEO
h
FE
-
-
-
0.1
20
100
nA
-
Collector-emitter cutoff current
V
CE
= 60 V,
I
B
= 0
-
DC current gain
1)
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
100
100
V
CEsat
V
BE(ON)
-
-
-
-
-
-
0.25
1.2
V
Collector-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 10 mA
-
-
Base-emitter voltage
1)
I
C
= 100 mA,
V
CE
= 1 V
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 20 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
1
Pulse
f
T
C
cb
-
-
100
7
-
-
MHz
pF
test: t < 300µs; D < 2%
2
2011-12-19
SMBTA06/MMBTA06
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 1 V
EHP00821
Collector-emitter saturation voltage
I
C
=
ƒ
(V
CEsat
),
h
FE
= 10
EHP00819
10
3
h
FE
100 C
10
2
25 C
10
3
Ι
C
mA
100 C
25 C
-50 C
10
2
5
-50 C
10
1
10
1
5
10
0 -1
10
10
0
10
1
10
2
mA 10
3
10
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V
V
CEsat
0.8
Ι
C
Base-emitter saturation voltage
I
C
=
ƒ
(V
BEsat
),
h
FE
= 10
10
3
mA
EHP00818
Collector current
I
C
=
ƒ
(V
BE
)
V
CE
= 1V
EHP00815
10
3
Ι
C
10
2
5
100 ˚C
25 ˚C
-50 ˚C
mA
Ι
C
10
2
5
100 C
25 C
-50 C
10
1
5
10
1
5
10
0
5
10
0
5
10
-1
0
0.5
1.0
V
1.5
10
-1
0
0.5
1.0
V
BE
V
1.5
V
BEsat
3
2011-12-19
SMBTA06/MMBTA06
Collector cutoff current
I
CBO
=
ƒ
(T
A
)
V
CBO
= 80 V
10
4
nA
EHP00820
Transition frequency
f
T
=
ƒ
(I
C
)
V
CE
= parameter in V,
f
= 2 GHz
10
3
MHz
f
T
5
EHP00817
Ι
CBO
10
5
3
max
10
2
5
10
1
5
10
0
5
10
-1
0
50
100
T
A
C 150
typ
10
2
5
10
1
10
0
5 10
1
5 10
2
mA
10
3
Ι
C
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
Emitter-base capacitance
C
eb
=
ƒ
(V
EB
)
80
pF
Total power dissipation
P
tot
=
ƒ
(T
S
)
400
mW
C
CB
(C
EB
)
60
300
40
CEB
Ptot
CCB
50
250
200
30
150
20
100
10
50
0
0
4
8
12
16
V
22
0
0
15
30
45
60
75
90 105 120
°C
TS
150
V
CB(VEB)
4
2011-12-19
SMBTA06/MMBTA06
Permissible Pulse Load
R
thJS
=
ƒ
(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
10
3
K/W
10
3
P
tot max
5
P
tot DC
t
p
D
=
T
t
p
T
EHP00816
10
2
R
thJS
10
2
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
5
10
1
10
1
5
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
5
2011-12-19
微控制器 MCU
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