CAS300M12BM2
1.2kV, 4.2 mΩ All-Silicon Carbide
Half-Bridge Module
C2M MOSFET and Z-Rec
TM
Diode
Features
E
sw, Total @ 300A
R
DS(on)
V
DS
1.2 kV
12 mJ
4.2 mΩ
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Package
62mm x 106mm x 30mm
Ultra Low Loss
High-Frequency Operation
Zero Reverse Recovery Current from Diode
Zero Turn-off Tail Current from MOSFET
Normally-off, Fail-safe Device Operation
Ease of Paralleling
Copper Baseplate and Aluminum Nitride Insulator
System Benefits
Enables Compact and Lightweight Systems
High Efficiency Operation
Mitigates Over-voltage Protection
Reduced Thermal Requirements
Reduced System Cost
Applications
Induction Heating
Motor Drives
Solar and Wind Inverters
UPS and SMPS
Traction
Part Number
CAS300M12BM2
Package
Half-Bridge Module
Marking
CAS300M12BM2
Maximum Ratings (T
C
=
25˚C unless otherwise specified)
Symbol
V
DSmax
V
GSmax
V
GSop
I
D
Parameter
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
Continuous Drain Current
Pulsed Drain Current
Junction Temperature
Case and Storage Temperature Range
Case Isolation Voltage
Stray Inductance
Power Dissipation
Value
1.2
-10/+25
-5/+20
423
293
1500
150
-40 to +125
5.0
15
1668
Unit
kV
V
V
A
A
˚C
˚C
kV
nH
W
AC, 50 Hz , 1 min
Measured between terminals 2 and 3
T
C
= 25 ˚C, T
J
= 150 ˚C
Fig. 25
Absolute Maximum values
Recommended Operational Values
V
GS
= 20 V, T
C
= 25 ˚C
V
GS
= 20 V, T
C
= 90 ˚C
Pulse width t
P
limited by T
jmax
Fig. 26
Test Conditions
Notes
BM2,R
e
v.A
I
D(pulse)
T
Jmax
T
C
,T
STG
V
isol
L
Stray
P
D
AS300M12
D
a
tash
ee
t: C
Subject to change without notice.
www.cree.com
1
Electrical Characteristics (T
C
=
25˚C unless otherwise specified)
Symbol
V
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
Parameter
Drain - Source Blocking Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On State Resistance
Min.
1.2
1.8
2.5
600
1500
1
4.2
7.7
156
144
19.3
2.57
0.12
5.8
6.1
3.0
166
475
1025
76
68
168
43
1.6
2.0
3.2
2.0
ns
ns
ns
ns
V
μC
nC
mJ
mJ
Ω
V
DD
= 600 V, V
GS
= -5V/+20V
I
D
= 300 A, R
G(ext)
= 2.5 Ω
Load = 77 μH, T
J
= 150 ˚C
Note: IEC 60747-8-4 Definitions
f = 200 kHz, V
AC
= 25 mV
V
DD
= 800 V, V
GS
= -5V/+20V,
I
D
= 300 A, Per JEDEC24 pg 27
V
DD
= 600V, V
GS
= -5/+20V,
I
D
= 300 A, R
G(ext)
= 2.5 Ω,
Timing relative to V
DS
Note: IEC 60747-8-4, pg 83
Inductive load
I
F
= 300 A, V
GS
= 0
I
F
= 300 A, T
J
= 150 ˚C, V
GS
= 0
Fig. 15
Fig. 22
nF
V
DS
= 600 V, f = 200 kHz,
V
AC
= 25 mV
Fig.
16, 17
100
5.3
mΩ
nA
2000
Typ.
Max.
Unit
kV
V
μA
Test Conditions
V
GS,
= 0 V, I
D
= 2 mA
V
DS
= 10 V
,
I
D
= 15 mA
Note
Fig 7
V
DS
= 1.2 kV, V
GS
= 0V
V
DS
= 1.2 kV,V
GS
= 0V, T
J
= 150 ˚C
V
GS
= 20 V, V
DS
= 0V
V
GS
= 20 V, I
DS
= 300 A
V
GS
= 20 V, I
DS
= 300 A,
T
J
= 150 ˚C
V
DS
= 20 V
,
I
DS
= 300 A
V
DS
= 20 V
,
I
D
= 300 A, T
J
= 150 ˚C
Fig. 4,
5, 6
Fig. 8
g
fs
C
iss
C
oss
C
rss
E
on
E
Off
R
G (int)
Q
GS
Q
GD
Q
G
t
d(on)
t
r
t
d(off)
t
f
V
SD
Q
C
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Switching Energy
Turn-Off Switching Energy
Internal Gate Resistance
Gate-Source Charge
Gate-Drain Charge
Total Gate Charge
Turn-on delay time
Rise Time
Turn-off delay time
Fall Time
Diode Forward Voltage
Total Capacitive Charge
S
Fig. 23
Fig. 10
Fig. 11
Note: The reverse recovery is purely capacitive
Thermal Characteristics
Symbol
R
thJCM
R
thJCD
Parameter
Thermal Resistance Juction-to-Case for MOSFET
Thermal Resistance Juction-to-Case for Diode
Min.
Typ.
0.070
0.073
Max.
0.075
0.076
Unit
˚C/W
Test Conditions
T
c
= 90 ˚C, P
D
= 150 W
T
c
= 90 ˚C, P
D
= 130 W
Note
Fig. 27
Fig. 28
Additional Module Data
Symbol
W
M
Weight
Mounting Torque
Clearance Distance
Creepage Distance
Parameter
Max.
300
5
9
30
40
Unit
g
Nm
Test Condtion
To heatsink and terminals
Terminal to terminal
Terminal to terminal
Terminal to baseplate
mm
mm
mm
2
CAS300M12BM2,Rev. A
Typical Performance
600
500
V
GS
= 20 V
V
GS
= 18 V
V
GS
= 10 V
V
GS
= 16 V
V
GS
= 14 V
600
V
GS
= 12 V
V
GS
= 20 V
V
GS
= 18 V
V
GS
= 16 V
V
GS
= 12 V
V
GS
= 10 V
500
Drain-Source Current, I
DS
(A)
400
300
200
100
0
0
Drain-Source Current, I
DS
(A)
400
V
GS
= 14 V
300
200
100
0
Conditions:
T
J
= -40°C
t
p
= 200 µs
Conditions:
T
J
= 25°C
t
p
= 200 µs
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 1. Output Characteristics T
J
= -40
˚
C
600
500
Figure 2. Output Characteristics T
J
= 25
˚
C
V
GS
= 20 V
V
GS
= 18 V
V
GS
= 16 V
V
GS
= 14 V
V
GS
= 12 V
V
GS
= 10 V
2.0
1.8
1.6
Conditions:
I
DS
= 300 A
V
GS
= 20 V
t
p
= 200 µs
Drain-Source Current, I
DS
(A)
On Resistance, R
DS On
(p.u.)
Conditions:
T
J
= 150°C
t
p
= 200 µs
400
300
200
100
0
0
1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
75
100
125
150
2
3
4
5
6
7
8
Drain-Source Voltage V
DS
(V)
Junction Temperature, T
J
(°C)
Figure 3. Output Characteristics T
J
= 150
˚
C
10
9
Figure 4. Normalized On-Resistance vs. Temperature
10.0
On-Resistance, R
DS ON
(mΩ)
8
7
6
5
4
3
2
1
0
0
Conditions:
V
GS
= 20 V
t
p
= 200 µs
9.0
T
j
= 150 °C
8.0
V
GS
= 12 V
V
GS
= 14 V
V
GS
= 16 V
V
GS
= 18 V
V
GS
= 20 V
On Resistance, R
DS On
(p.u.)
7.0
6.0
5.0
4.0
3.0
2.0
1.0
T
j
= 25 °C
T
j
= -40 °C
Conditions:
I
DS
= 300 A
t
p
= 200 µs
-50
-25
0
25
50
75
100
125
150
100
200
300
400
500
600
0.0
Drain-Source Current, I
DS
(A)
Junction Temperature, T
J
(°C)
Figure 5. On-Resistance vs. Drain Current for
Various Temperatures
3
CAS300M12BM2,Rev. A
Figure 6. On-Resistance vs. Temperature for Various
Gate-Source Voltage
Typical Performance
3.5
3.0
Conditions
V
DS
= V
GS
V
10
I
DS
= 0.5mA
15 mA
400
350
Conditions:
V
DS
= 20 V
tp < 200 µs
T
J
= 150 °C
Drain-Source Current, I
DS
(A)
Threshold Voltage, V
GS(th)
(V)
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
300
250
T
J
= 25 °C
200
150
100
50
0
0
2
4
6
8
T
J
= -40 °C
10
12
14
Junction Temperature T
J
(°C)
Gate-Source Voltage, V
GS
(V)
Figure 7. Threshold Voltage vs. Temperature
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
V
GS
= 0 V
Figure 8. Transfer Characteristic for Various
Junction Temperatures
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
Drain-Source Current, I
DS
(A)
-200
V
GS
= -2 V
Drain-Source Current, I
DS
(A)
-100
-100
-200
-300
-300
V
GS
= -5 V
Conditions:
T
J
= -40 °C
t
p
= 200 µs
-400
V
GS
= -2 V
Conditions:
T
J
= 25°C
t
p
= 200 µs
-400
-500
V
GS
= -5 V
V
GS
= 0 V
-500
Drain-Source Voltage V
DS
(V)
-600
Drain-Source Voltage V
DS
(V)
-600
Figure 9. Diode Characteristic at -40
˚
C
Figure 10. Diode Characteristic at 25
˚
C
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
-3.0
-2.5
-2.0
V
GS
= 0 V
-1.5
-1.0
-0.5
0.0
0
Drain-Source Current, I
DS
(A)
Drain-Source Current, I
DS
(A)
-100
-100
V
GS
= 5 V
-200
-200
V
GS
= 10 V
V
GS
= 15 V
-300
-300
V
GS
= 20 V
-400
V
GS
= -5 V
V
GS
= 0 V
V
GS
= -2 V
Conditions:
T
J
= 150°C
t
p
= 200 µs
-400
-500
Drain-Source Voltage V
DS
(V)
-600
Conditions:
T
J
= 25 °C
-40 °C
t
p
= 200 µs
-500
Drain-Source Voltage V
DS
(V)
-600
Figure 11. Diode Characteristic at 150
˚
C
Figure 12. 3
rd
Quadrant Characteristic at -40
˚
C
4
CAS300M12BM2,Rev. A
Typical Performance
-3.0
-2.5
Conditions:
T
J
= 25°C
t
p
= 200 µs
V
GS
= 5 V
-2.0
V
GS
= 0 V
-1.5
-1.0
-0.5
0.0
0
-3.0
-2.5
Conditions:
T
J
= 150°C
t
p
= 200 µs
-2.0
V
GS
= 0 V
-1.5
-1.0
-0.5
0.0
0
Drain-Source Current, I
DS
(A)
-100
Drain-Source Current, I
DS
(A)
-100
V
GS
= 5 V
-200
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 20 V
-200
V
GS
= 10 V
-300
V
GS
= 15 V
-300
-400
-400
-500
V
GS
= 20 V
-500
Drain-Source Voltage V
DS
(V)
-600
Drain-Source Voltage V
DS
(V)
-600
Figure 13. 3
rd
Quadrant Characteristic at 25
˚
C
25
Conditions:
TJ = 25 °C
I
DS
= 300 A
V
DS
= 1000 V
Figure 14. 3
rd
Quadrant Characteristic at 150
˚
C
100
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 200 kHz
20
C
iss
Source
Gate-Source Voltage, V
GS
(V)
10
15
Capacitance (nF)
C
oss
10
1
5
0.1
C
rss
0
0.01
-5
0
200
400
Gate Charge (nC)
600
800
1000
1200
0
50
100
Drain-Source Voltage, V
DS
(V)
150
200
Figure 15. Typical Gate Charge Characteristics
100
Figure 16. Typical Capacitances vs. Drain-Source
Voltage (0 - 200 V)
1.6
1.4
1.2
C
iss
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 200 kHz
10
Capacitance (nF)
C
oss
Stored Energy, E
OSS
(mJ)
1
0.8
0.6
0.4
0.2
1
0.1
C
rss
0.01
0
200
400
600
Drain-Source Voltage, V
DS
(V)
800
1000
0
0
200
400
600
800
1000
1200
Drain to Source Voltage, V
DS
(V)
Figure 17. Typical Capacitances vs. Drain-Source
Voltage (0 - 1 kV)
CAS300M12BM2,Rev. A
Figure 18. Typical Output Capacitor Stored Energy
5
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