BFS17P
NPN Silicon RF Transistor
Features
•
•
•
•
•
•
•
•
•
Maximum collector-emitter voltage V
CE0
= 15 V
Maximum collector current I
C
= 25 mA
Noise figure NF = 3.5 dB
3rd order output intercept point OIP
3
= 21.5 dBm
1 dB output compression point P
-1dB
= 10 dBm
Transition frequency f
T
= 1.4 GHz
Maximum total power dissipation P
tot
= 280 mW
Package: SOT23
Pb-free (RoHS compliant) package
Potential Applications
•
•
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
For mixers and oscillators in sub-GHz applications
Device Information
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type / Ordering code
BFS17P / BFS17PE6327HTSA1
Marking
MCs
1=B
Pin Configuration
2=E
3=C
Package
SOT23
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Revision 1.1
2017-06-01
NPN Silicon RF Transistor
Table of contents
BFS17P
Table of contents
Features
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Potential Applications
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Device Information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents
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1
2
3
4
5
5.1
Maximum Ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
Typical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
SOT23 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision History
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Trademarks
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Datasheet
2
Revision 1.1
2017-06-01
NPN Silicon RF Transistor
Maximum Ratings
BFS17P
1
Table 1
Parameter
Maximum Ratings
Maximum Rating at
T
A
= 25 °C, unless otherwise specified
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
P
tot
T
j
T
A
T
Stg
Values
15
25
2.5
25
50
280
150
-65 ... 150
-65 ... 150
–
mW
°C
T
S
≤ 95 °C
–
mA
Unit
V
Note or Test Condition
–
–
–
–
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation
1)
Junction temperature
Ambient temperature
Storage temperature
2
Table 2
Parameter
Thermal Resistance
Thermal resistance
Symbol
R
thJS
Values
≤ 195
Unit
K/W
Note or Test Condition
–
Junction - soldering point
Note:
For calculation of R
thJA
please refer to Application Note AN077 (Thermal Resistance Calculation)
1
T
S
is measured on the collector lead at the soldering point to the pcb
3
Revision 1.1
2017-06-01
Datasheet
NPN Silicon RF Transistor
Electrical Characteristics
BFS17P
3
Table 3
Parameter
Electrical Characteristics
DC Characteristics at
T
A
= 25°C, unless otherwise specified
Symbol
Min.
V
(BR)CEO
I
CBO
I
EBO
h
FE
15
–
–
–
40
20
–
–
–
–
–
70
0.1
Values
Typ.
Max.
–
0.05
10
100
150
–
0.4
V
µA
–
V
µA
I
C
= 1 mA,
I
B
= 0
V
CB
= 10 V,
I
E
= 0
V
CB
= 25 V,
I
E
= 0
V
EB
= 2.5 V,
I
C
= 0
I
C
= 2 mA,
V
CE
= 1 V
pulse measured
I
C
= 25 mA,
V
CE
= 1 V
pulse measured
I
C
= 10 mA,
I
B
= 1 mA
Unit
Note or Test Condition
Collector-emitter breakdown
voltage
Collector-base cutoff current
Emitter-base cutoff current
DC current gain
Collector-emitter saturation
voltage
Table 4
Parameter
Transition frequency
V
CEsat
–
AC Characteristics at T
A
= 25°C, unless otherwise specified
Symbol
Min.
f
T
1
1.3
Values
Typ.
1.4
2.5
0.55
0.27
0.9
3.5
13
21.5
1.45
5
–
–
Max.
–
–
0.8
pF
pF
pF
dB
dB
dBm
GHz
I
C
= 2 mA,
V
CE
= 5 V,
f
= 200 MHz
I
C
= 25 mA,
V
CE
= 5 V,
f
= 200 MHz
V
CB
= 5 V,
f
= 1 MHz,
V
BE
= 0 , emitter grounded
V
CE
= 5 V,
f
= 1 MHz,
V
BE
= 0 , base grounded
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 , collector grounded
I
C
= 2 mA,
V
CE
= 5 V,
Z
S
= 50Ω,
f
= 800 MHz
I
C
= 20 mA,
V
CE
= 5 V,
Z
S
=
Z
L
= 50Ω,
f
= 500 MHz
V
CE
= 5 V,
I
C
= 20 mA,
f
= 800 MHz,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
I
C
= 20 mA,
V
CE
= 5 V,
Z
S
=
Z
L
= 50Ω, f = 800 MHz
Unit
Note or Test Condition
Collector-base capacitance
Collector emitter capacitance
Emitter-base capacitance
Minimum noise figure
Transducer gain
Third order intercept point at
output
1dB compression point
C
cb
C
ce
C
eb
NF
min
|S
21e
|
2
OIP
3
–
–
–
–
–
–
P
-1dB
–
10
–
dBm
Datasheet
4
Revision 1.1
2017-06-01
NPN Silicon RF Transistor
Typical characteristics diagrams
BFS17P
4
Typical characteristics diagrams
Figure 1
Total Power Dissipation
10
3
R
thJS
[K/W]
10
2
D=0
D = .005
D = .01
D = .02
D = .05
D = .1
D = .2
D = .5
10
1
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
p
[sec]
Figure 2
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Datasheet
5
Revision 1.1
2017-06-01
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