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FM24V01-G

产品描述Memory Circuit, 16KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
产品类别存储    存储   
文件大小373KB,共14页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
标准
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FM24V01-G概述

Memory Circuit, 16KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

FM24V01-G规格参数

参数名称属性值
是否Rohs认证符合
零件包装代码SOIC
包装说明SOP, SOP8,.25
针数8
Reach Compliance Codeunknown
JESD-30 代码R-PDSO-G8
长度4.9 mm
内存密度131072 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
功能数量1
端子数量8
字数16384 words
字数代码16000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织16KX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
电源2.5/3.3 V
认证状态Not Qualified
座面最大高度1.75 mm
最大待机电流0.00015 A
最大压摆率0.001 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
宽度3.9 mm
Base Number Matches1

文档预览

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FM24V01
128Kb Serial 3V F-RAM Memory
Features
128K bit Ferroelectric Nonvolatile RAM
Organized as 16,384 x 8 bits
High Endurance 100 Trillion (10
14
) Read/Writes
10 year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
Up to 3.4 MHz maximum bus frequency
Direct hardware replacement for EEPROM
Supports legacy timing for 100 kHz & 400 kHz
Device ID
Device ID reads out Manufacturer ID & Part ID
Low Voltage, Low Power Operation
Low Voltage Operation 2.0V – 3.6V
Active Current 90
A
(typ.
@ 100KHz
)
Standby Current 80
A
(typ.)
Sleep Mode Current 4
A
(typ.)
Industry Standard Configuration
Industrial Temperature -40 C to +85 C
8-pin “Green”/RoHS SOIC Package
Description
The FM24V01 is a 128Kbit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM24V01 performs write operations at bus
speed. No write delays are incurred. The next bus
cycle may commence immediately without the need
for data polling. In addition, the product offers write
endurance orders of magnitude higher than
EEPROM. Also, F-RAM exhibits much lower power
during writes than EEPROM since write operations
do not require an internally elevated power supply
voltage for write circuits.
These capabilities make the FM24V01 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss. The
combination of features allows more frequent data
writing with less overhead for the system.
The FM24V01 provides substantial benefits to users
of serial EEPROM, yet these benefits are available in
a hardware drop-in replacement. The device is
available in an industry standard 8-pin SOIC package
using a familiar two-wire (I
2
C) protocol. The device
incorporates a read-only Device ID that allows the
host to determine the manufacturer, product density,
and product revision. The device is guaranteed over
an industrial temperature range of -40°C to +85°C.
Pin Configuration
A0
A1
A2
VSS
1
2
3
4
8
7
6
5
VDD
WP
SCL
SDA
Pin Name
A0-A2
SDA
SCL
WP
VDD
VSS
Function
Device Select Address
Serial Data/address
Serial Clock
Write Protect
Supply Voltage
Ground
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s internal
qualification testing and has reached production status.
Rev. 3.0
Jan. 2012
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Page 1 of 14

FM24V01-G相似产品对比

FM24V01-G FM24V01-GTR
描述 Memory Circuit, 16KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8 Memory Circuit, 16KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
是否Rohs认证 符合 符合
零件包装代码 SOIC SOIC
包装说明 SOP, SOP8,.25 SOP, SOP8,.25
针数 8 8
Reach Compliance Code unknown unknown
JESD-30 代码 R-PDSO-G8 R-PDSO-G8
长度 4.9 mm 4.9 mm
内存密度 131072 bit 131072 bit
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 8 8
功能数量 1 1
端子数量 8 8
字数 16384 words 16384 words
字数代码 16000 16000
工作模式 SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
组织 16KX8 16KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP
封装等效代码 SOP8,.25 SOP8,.25
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
电源 2.5/3.3 V 2.5/3.3 V
认证状态 Not Qualified Not Qualified
座面最大高度 1.75 mm 1.75 mm
最大待机电流 0.00015 A 0.00015 A
最大压摆率 0.001 mA 0.001 mA
最大供电电压 (Vsup) 3.6 V 3.6 V
最小供电电压 (Vsup) 2 V 2 V
标称供电电压 (Vsup) 3.3 V 3.3 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL
端子形式 GULL WING GULL WING
端子节距 1.27 mm 1.27 mm
端子位置 DUAL DUAL
宽度 3.9 mm 3.9 mm

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