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HN7G01FU-AT5LFT

产品描述Bipolar Transistors - BJT Vceo=-12V Vds=20V Ic=-400mA Id=50mA
产品类别半导体    分立半导体   
文件大小328KB,共6页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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HN7G01FU-AT5LFT概述

Bipolar Transistors - BJT Vceo=-12V Vds=20V Ic=-400mA Id=50mA

HN7G01FU-AT5LFT规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Toshiba(东芝)
产品种类
Product Category
Bipolar Transistors - BJT
RoHSDetails
安装风格
Mounting Style
SMD/SMT
Transistor PolarityPNP
ConfigurationDual
Collector- Emitter Voltage VCEO Max- 12 V
Collector- Base Voltage VCBO- 15 V
Emitter- Base Voltage VEBO- 5 V
DC Current Gain hFE Max1000
系列
Packaging
Reel
Continuous Collector Current- 400 mA
DC Collector/Base Gain hfe Min300
Pd-功率耗散
Pd - Power Dissipation
200 mW
工厂包装数量
Factory Pack Quantity
3000

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HN7G01FU
Preliminary
TOSHIBA Multi Chip Discrete Device
HN7G01FU
Power Management Switch Application
Driver Circuit Application
Interface Circuit Application
Q1 (transistor): 2SA1955 equivalent
Q2 (MOS-FET): 2SK1830 equivalent
Unit: mm
Q1
(transistor)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
−15
−12
−5
−400
−50
Unit
V
V
V
mA
mA
Q2
(MOS-FET)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Symbol
V
DS
V
GSS
I
D
Rating
20
10
50
Unit
V
V
mA
JEDEC
JEITA
TOSHIBA
Weight: 6.8 mg (typ.)
Q1, Q2 Common Ratings
(Ta
=
25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
(Note 1)
T
j
T
stg
Rating
200
125
−55~150
Unit
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Pin Assignment
(top view)
1
2007-11-01

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描述 Bipolar Transistors - BJT Vceo=-12V Vds=20V Ic=-400mA Id=50mA transistors bipolar - bjt vceo=-12v vds=20v Ic=-400ma Id=50ma

 
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