BFP540FESD
Low Noise Silicon Bipolar RF Transistor
•
For ESD protected high gain low noise amplifier
•
Excellent ESD performance
typical value 1000 V (HBM)
•
Outstanding
G
ms
= 20 dB
Minimum noise figure
NF
min
= 0.9 dB
•
Pb-free (ROHS compliant) and halogen-free thin small
flat package with visible leads
•
Qualification report according to AEC-Q101 available
4
3
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFP540FESD
Marking
AUs
1=B
Pin Configuration
2=E
3=C
4=E
-
-
Package
TSFP-4
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
CEO
Value
Unit
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
4.5
4
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
80 °C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
10
10
1
80
8
250
150
-55 ... 150
mW
°C
mA
Junction temperature
Storage temperature
1
T
S
is
measured on the emitter lead at the soldering point to the pcb
1
2013-09-05
BFP540FESD
Thermal Resistance
Parameter
Symbol
R
thJS
Value
Unit
Junction - soldering point
1)
280
K/W
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 10 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 20 mA,
V
CE
= 3.5 V, pulse measured
1
For
Unit
max.
-
10
100
10
170
V
µA
nA
µA
-
typ.
5
-
-
-
110
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
4.5
-
-
-
50
the definition of
R
thJS please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2013-09-05
BFP540FESD
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 50 mA,
V
CE
= 4 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
I
C
= 5 mA,
V
CE
= 2 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
I
C
= 5 mA,
V
CE
= 2 V,
f
= 3 GHz,
Z
S
=
Z
Sopt
Power gain, maximum stable
1)
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 3 GHz
Transducer gain
I
C
= 20 mA,
V
CE
= 2 V,
Z
S =
Z
L =
50
Ω
,
f
=
1
.
8GHz
I
C
= 20 mA,
V
CE
= 2 V,
Z
S =
Z
L =
50
Ω
,
f
=
3GHz
Third order intercept point at output
2)
V
CE
= 2 V,
I
C
= 20 mA,
Z
S =
Z
L =
50
Ω
,
f
=
1
.
8GHz
1dB compression point at output
I
C
= 20 mA,
V
CE
= 2 V,
Z
S =
Z
L =
50
Ω
,
f
=
1
.
8GHz
1
G
1/2
ma
= |S
21e
/
S
12e
| (k-(k²-1) ),
G
ms
= |S
21e
/
S
12e
|
2
IP3 value depends on termination of all intermodulation frequency components.
Unit
max.
-
0.26
GHz
pF
typ.
30
0.16
f
T
C
cb
21
-
C
ce
-
0.4
-
C
eb
-
0.55
-
NF
min
-
-
G
ms
-
0.9
1.3
20
1.4
-
-
dB
dB
G
ma
-
14.5
-
dB
|S
21e
|
2
15.5
-
IP3
P
-1dB
-
-
18
13
24.5
11
-
-
-
-
dB
dBm
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
2013-09-05
BFP540FESD
Total power dissipation
P
tot
=
ƒ
(T
S
)
300
mW
P
TOT
200
150
100
50
0
0
30
60
90
°C
150
T
S
4
2013-09-05
Package TSFP-4
BFP540FESD
5
2013-09-05
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