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IS62WV51216BLL-55BI-TR

产品描述SRAM 8Mb 512Kx16 55ns Async SRAM
产品类别存储   
文件大小155KB,共16页
制造商ISSI(芯成半导体)
官网地址http://www.issi.com/
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IS62WV51216BLL-55BI-TR概述

SRAM 8Mb 512Kx16 55ns Async SRAM

IS62WV51216BLL-55BI-TR规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
ISSI(芯成半导体)
产品种类
Product Category
SRAM
RoHSN
Memory Size8 Mbit
Organization512 k x 16
Access Time55 ns
接口类型
Interface Type
Parallel
电源电压-最大
Supply Voltage - Max
3.6 V
电源电压-最小
Supply Voltage - Min
2.5 V
Supply Current - Max5 mA
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 85 C
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
TFBGA-48
系列
Packaging
Reel
数据速率
Data Rate
SDR
类型
Type
Asynchronous
Number of Ports1
Moisture SensitiveYes
工厂包装数量
Factory Pack Quantity
2500

文档预览

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IS62WV51216ALL
IS62WV51216BLL
512K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
DECEMBER 2007
FEATURES
• High-speed access time: 45ns, 55ns
• CMOS low power operation
– 36 mW (typical) operating
– 12 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
– 1.65V--2.2V V
DD
(62WV51216ALL)
– 2.5V--3.6V V
DD
(62WV51216BLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
DESCRIPTION
The
ISSI
IS62WV51216ALL/ IS62WV51216BLL are high-
speed, 8M bit static RAMs organized as 512K words by 16
bits. It is fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with innovative
circuit design techniques, yields high-performance and low
power consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected) or when
CS1
is LOW, CS2 is HIGH and both
LB
and
UB
are HIGH, the device assumes a standby mode at
which the power dissipation can be reduced down with CMOS
input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE)
controls both writing and reading of the memory. A data
byte allows Upper Byte
(UB)
and Lower Byte (LB) access.
The IS62WV51216ALL and IS62WV51216BLL are packaged
in the JEDEC standard 48-pin mini BGA (7.2mm x 8.7mm)
and 44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
A0-A18
DECODER
512K x 16
MEMORY ARRAY
V
DD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CS2
CS1
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
12/13/2007
1

IS62WV51216BLL-55BI-TR相似产品对比

IS62WV51216BLL-55BI-TR IS62WV51216ALL-70BI-TR IS62WV51216ALL-70BI IS62WV51216BLL-55BI
描述 SRAM 8Mb 512Kx16 55ns Async SRAM SRAM 8Mb 512Kx16 70ns Async SRAM SRAM 8Mb 512Kx16 70ns Async SRAM SRAM 8Mb 512Kx16 55ns Async SRAM
Product Attribute Attribute Value Attribute Value - Attribute Value
制造商
Manufacturer
ISSI(芯成半导体) ISSI(芯成半导体) - ISSI(芯成半导体)
产品种类
Product Category
SRAM SRAM - SRAM
RoHS N N - N
Memory Size 8 Mbit 8 Mbit - 8 Mbit
Organization 512 k x 16 512 k x 16 - 512 k x 16
Access Time 55 ns 70 ns - 55 ns
接口类型
Interface Type
Parallel Parallel - Parallel
电源电压-最大
Supply Voltage - Max
3.6 V 2.2 V - 3.6 V
电源电压-最小
Supply Voltage - Min
2.5 V 1.65 V - 2.5 V
Supply Current - Max 5 mA 4 mA - 5 mA
最小工作温度
Minimum Operating Temperature
- 40 C - 40 C - - 40 C
最大工作温度
Maximum Operating Temperature
+ 85 C + 85 C - + 85 C
安装风格
Mounting Style
SMD/SMT SMD/SMT - SMD/SMT
封装 / 箱体
Package / Case
TFBGA-48 TFBGA-48 - TFBGA-48
系列
Packaging
Reel Reel - Tray
数据速率
Data Rate
SDR SDR - SDR
类型
Type
Asynchronous Asynchronous - Asynchronous
Number of Ports 1 1 - 1
Moisture Sensitive Yes Yes - Yes
工厂包装数量
Factory Pack Quantity
2500 2500 - 312
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