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IS43R32400E-4BL

产品描述DRAM 128M (4Mx32) 250MHz 2.5v DDR SDRAM
产品类别存储   
文件大小1MB,共31页
制造商ISSI(芯成半导体)
官网地址http://www.issi.com/
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IS43R32400E-4BL概述

DRAM 128M (4Mx32) 250MHz 2.5v DDR SDRAM

IS43R32400E-4BL规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
ISSI(芯成半导体)
产品种类
Product Category
DRAM
RoHSDetails
类型
Type
SDRAM - DDR1
Data Bus Width32 bit
Organization4 M x 32
封装 / 箱体
Package / Case
BGA-144
Memory Size128 Mbit
Maximum Clock Frequency250 MHz
Access Time4 ns
电源电压-最大
Supply Voltage - Max
2.7 V
电源电压-最小
Supply Voltage - Min
2.3 V
Supply Current - Max340 mA
最小工作温度
Minimum Operating Temperature
0 C
最大工作温度
Maximum Operating Temperature
+ 70 C
系列
Packaging
Tray
安装风格
Mounting Style
SMD/SMT
Moisture SensitiveYes
工作电源电压
Operating Supply Voltage
2.5 V
工厂包装数量
Factory Pack Quantity
189

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IS43/46R16800E, IS43/46R32400E
4Mx32, 8Mx16
128Mb DDR SDRAM
FEATURES
VDD and VDDQ: 2.5V ± 0.2V (-5,-6)
VDD and VDDQ: 2.5V ± 0.1V (-4)
SSTL_2 compatible I/O
Double-data rate architecture; two data transfers
per clock cycle
Bidirectional, data strobe (DQS) is transmitted/
received with data, to be used in capturing data
at the receiver
DQS is edge-aligned with data for READs and
centre-aligned with data for WRITEs
Differential clock inputs (CK and CK)
DLL aligns DQ and DQS transitions with CK
transitions
Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
Four internal banks for concurrent operation
Data Mask for write data. DM masks write data
at both rising and falling edges of data strobe
Burst Length: 2, 4 and 8
Burst Type: Sequential and Interleave mode
Programmable CAS latency: 2, 2.5, 3, and 4
Auto Refresh and Self Refresh Modes
Auto Precharge
T
ras
Lockout supported (t
rap
= t
rcd
)
JANUARY 2014
DEVICE OVERVIEW
ISSI’s 128-Mbit DDR SDRAM achieves high speed data
transfer using pipeline architecture and two data word
accesses per clock cycle. The 134,217,728-bit memory
array is internally organized as four banks of 32Mb to
allow concurrent operations. The pipeline allows Read
and Write burst accesses to be virtually continuous, with
the option to concatenate or truncate the bursts. The
programmable features of burst length, burst sequence
and CAS latency enable further advantages. The device
is available in 16-bit and 32-bit data word size Input
data is registered on the I/O pins on both edges of
Data Strobe signal(s), while output data is referenced
to both edges of Data Strobe and both edges of CLK.
Commands are registered on the positive edges of CLK.
An Auto Refresh mode is provided, along with a Self
Refresh mode. All I/Os are SSTL_2 compatible.
ADDRESS TABLE
Parameter
Configuration
Bank Address
Pins
Autoprecharge
Pins
Row Address
Column
Address
Refresh Count
Com./Ind./A1
A2
4M x 32
1M x 32 x 4
banks
BA0, BA1
A8/AP
4K(A0 – A11)
256(A0 – A7)
8M x 16
2M x 16 x 4
banks
BA0, BA1
A10/AP
4K(A0 – A11)
512(A0 – A8)
OPTIONS
• Configuration(s): 4Mx32, 8Mx16
• Package(s):
144 Ball BGA (x32)
66-pin TSOP-II (x16) and 60 Ball BGA (x16)
• Lead-free package available
• Temperature Range:
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
Automotive, A1 (-40°C to +85°C)
Automotive, A2 (-40°C to +105°C)
4K / 64ms
4K / 16ms
4K / 64ms
4K / 16ms
KEY TIMING PARAMETERS
Speed Grade
F
ck
Max CL = 4
F
ck
Max CL = 3
F
ck
Max CL = 2.5
F
ck
Max CL = 2
-4
250
200
-5
200
167
133
-6
167
167
133
Units
MHz
MHz
MHz
MHz
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest
version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.
Rev. C
1/16/14
1

IS43R32400E-4BL相似产品对比

IS43R32400E-4BL IS43R16800E-5TL IS43R32400E-5BL-TR IS43R16800E-6TLI-TR IS43R32400E-4B-TR IS43R16800E-5TLI IS43R16800E-6TL IS43R32400E-4BL-TR IS43R32400E-5BL
描述 DRAM 128M (4Mx32) 250MHz 2.5v DDR SDRAM DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM DRAM 128M (4Mx32) 200MHz DDR 2.5v DRAM 128M (8Mx16) 166MHz DDR 2.5v DRAM 128M, 2.5V, DDR, 4Mx32, 250MHz @ CL4, 144-ball BGA (12mmx12mm), T&R DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM DRAM 128M (8Mx16) 166MHz 2.5v DDR SDRAM DRAM 128M (4Mx32) 250MHz DDR 2.5v DRAM 128M (4Mx32) 200MHz 2.5v DDR SDRAM
Product Attribute Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value
制造商
Manufacturer
ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体)
产品种类
Product Category
DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM
类型
Type
SDRAM - DDR1 SDRAM - DDR1 SDRAM - DDR1 SDRAM - DDR1 SDRAM - DDR1 SDRAM - DDR1 SDRAM - DDR1 SDRAM - DDR1 SDRAM - DDR1
Data Bus Width 32 bit 16 bit 32 bit 16 bit 32 bit 16 bit 16 bit 32 bit 32 bit
Organization 4 M x 32 8 M x 16 4 M x 32 8 M x 16 4 M x 32 8 M x 16 8 M x 16 4 M x 32 4 M x 32
封装 / 箱体
Package / Case
BGA-144 TSOP-66 BGA-144 TSOP-66 BGA-144 TSOP-66 TSOP-66 BGA-144 BGA-144
Memory Size 128 Mbit 128 Mbit 128 Mbit 128 Mbit 128 Mbit 128 Mbit 128 Mbit 128 Mbit 128 Mbit
Maximum Clock Frequency 250 MHz 200 MHz 200 MHz 166 MHz 250 MHz 200 MHz 166 MHz 250 MHz 200 MHz
Access Time 4 ns 5 ns 5 ns 6 ns 0.7 ns 5 ns 6 ns 4 ns 5 ns
电源电压-最大
Supply Voltage - Max
2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
电源电压-最小
Supply Voltage - Min
2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V
Supply Current - Max 340 mA 240 mA 320 mA 220 mA 340 mA 240 mA 220 mA 340 mA 320 mA
最小工作温度
Minimum Operating Temperature
0 C 0 C 0 C - 40 C 0 C - 40 C 0 C 0 C 0 C
最大工作温度
Maximum Operating Temperature
+ 70 C + 70 C + 70 C + 85 C + 70 C + 85 C + 70 C + 70 C + 70 C
安装风格
Mounting Style
SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT
工作电源电压
Operating Supply Voltage
2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
工厂包装数量
Factory Pack Quantity
189 108 1500 1500 1500 108 108 1500 189
RoHS Details Details Details Details - Details Details Details Details
系列
Packaging
Tray Tray Reel Reel - Tray Tray Reel Tray
Moisture Sensitive Yes Yes Yes Yes - Yes Yes Yes Yes
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