AUTOMOTIVE GRADE
AUIRFS4310Z
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
Base part number
AUIRFS4310Z
Package Type
D
2
-Pak
100V
4.8m
6.0m
127A
120A
S
G
D
2
-Pak
AUIRFS4310Z
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFS4310Z
AUIRFS4310ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
127
90
120
560
250
1.7
± 20
130
See Fig.14,15, 22a, 22b
18
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount), D
2
Pak
Typ.
–––
–––
Max.
0.6
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2017-10-12
AUIRFS4310Z
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
gfs
R
G
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
Min.
100
–––
–––
2.0
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.11
4.8
–––
–––
0.7
–––
–––
–––
–––
120
29
35
85
20
60
55
57
6860
490
220
570
920
–––
–––
6.0
4.0
–––
–––
20
250
100
-100
170
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 5mA
m V
GS
= 10V, I
D
= 75A
V
V
DS
= V
GS
, I
D
= 150µA
S V
DS
= 50V, I
D
= 75A
V
DS
= 100V, V
GS
= 0V
µA
V
DS
= 80V,V
GS
= 0V,T
J
=125°C
nA
V
GS
= 20V
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
I
D
= 75A
V
DS
= 50V
nC
V
GS
= 10V
V
DD
= 65V
I
D
= 75A
ns
R
G
= 2.7
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
pF ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 80V
V
GS
= 0V, V
DS
= 0V to 80V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 75A,V
GS
= 0V
T
J
= 25°C
V
DD
= 85V
ns
T
J
= 125°C
I
F
= 75A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Q
rr
I
RRM
t
on
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Typ. Max. Units
––– 127
–––
–––
40
49
58
89
2.5
560
1.3
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.047mH, R
G
= 25, I
AS
= 75A, V
GS
=10V. Part not recommended for use above this value.
I
SD
75A,
di/dt
600A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at T
J
approximately 90°C.
2
2017-10-12
AUIRFS4310Z
1000
TOP
1000
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
4.5V
4.5V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
60µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
2.5
Fig. 2
Typical Output Characteristics
ID = 75A
VGS = 10V
2.0
ID, Drain-to-Source Current
)
100
TJ = 175°C
10
1.5
TJ = 25°C
1
1.0
VDS = 50V
0.1
2.0
3.0
4.0
5.0
60µs PULSE WIDTH
6.0
7.0
8.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig. 3
Typical Transfer Characteristics
12000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig. 4
Normalized On-Resistance vs. Temperature
20
VGS, Gate-to-Source Voltage (V)
ID= 75A
VDS = 80V
VDS= 50V
VDS= 20V
10000
16
C, Capacitance (pF)
8000
Ciss
12
6000
8
4000
2000
Coss
Crss
4
0
1
10
100
0
0
40
80
120
160
200
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2017-10-12
AUIRFS4310Z
1000
10000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100
TJ = 175°C
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
1msec
100µsec
10
TJ = 25°C
10
10msec
1
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
DC
10
100
0.1
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
140
LIMITED BY PACKAGE
120
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
130
ID = 5mA
120
100
80
60
40
20
0
25
50
75
100
125
150
175
TC, Case Temperature (°C)
110
100
90
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
3.0
Fig 10.
Drain-to-Source Breakdown Voltage
600
EAS, Single Pulse Avalanche Energy (mJ)
2.5
500
11A
19A
BOTTOM
75A
TOP
ID
2.0
400
Energy (µJ)
1.5
300
1.0
200
0.5
100
0.0
0
20
40
60
80
100
0
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
4
Fig 12.
Maximum Avalanche Energy vs. Drain Current
2017-10-12
AUIRFS4310Z
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.02
J
J
1
Ri (°C/W)
R
1
R
1
2
R
2
R
2
R
3
R
3
3
R
4
R
4
C
1
2
3
4
4
C
I
(sec)
0.000007
0.000117
0.001817
0.011735
0.018756
0.159425
0.320725
0.101282
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
iRi
Ci=
iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
0.01
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14.
Avalanche Current vs. Pulse width
140
120
EAR , Avalanche Energy (mJ)
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A
100
80
60
40
20
0
25
50
75
100
125
150
175
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 13, 14).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/
Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Starting TJ , Junction Temperature (°C)
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
2017-10-12
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