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NSS20300MR6T1G

产品描述Bipolar Transistors - BJT 3A 20V Low VCEsat
产品类别分立半导体    晶体管   
文件大小121KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NSS20300MR6T1G概述

Bipolar Transistors - BJT 3A 20V Low VCEsat

NSS20300MR6T1G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
零件包装代码TSOP
包装说明LEAD FREE, MINIATURE, CASE 318G-02, TSOP-6
针数6
制造商包装代码318G-02
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time1 week
最大集电极电流 (IC)3 A
集电极-发射极最大电压20 V
配置SINGLE
最小直流电流增益 (hFE)100
JESD-30 代码R-PDSO-G6
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量6
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性/信道类型PNP
认证状态Not Qualified
表面贴装YES
端子面层Tin (Sn)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间40
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)100 MHz
Base Number Matches1

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NSS20300MR6T1G
20 V, 5 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Continuous
Collector Current
Peak
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
Max
−20
−30
−6.0
−3.0
−5.0
Unit
Vdc
Vdc
Vdc
Adc
A
1
TSOP−6
CASE 318G
STYLE 6
http://onsemi.com
20 VOLTS
5.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
78 mW
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead #1
Total Device Dissipation
(Single Pulse < 10 sec.)
Junction and Storage
Temperature Range
Symbol
P
D
(Note 1)
R
qJA
(Note 1)
P
D
(Note 2)
Max
545
4.3
230
1.06
8.5
R
qJA
(Note 2)
R
qJL
(Note 1)
R
qJL
(Note 2)
P
Dsingle
(Note 2)
T
J
, T
stg
118
48
40
1.75
−55
to
+150
Unit
mW
mW/°C
°C/W
W
mW/°C
°C/W
°C/W
°C/W
W
°C
DEVICE MARKING
VS1 MG
G
VS1 = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm
2
, 2 oz copper traces.
2. FR−4 @ 500 mm
2
, 2 oz copper traces.
NSS20300MR6T1G TSOP−6 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
April, 2009
Rev. 2
1
Publication Order Number:
NSS20300MR6/D
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