CYStech Electronics Corp.
Low V
CESAT
PNP Epitaxial Planar Transistor
Spec. No. : C313N3-H
Issued Date : 2003.09.26
Revised Date :
Page No. : 1/4
BTP8550N3
Features
•
Low V
CE(SAT)
, -0.18V(typically) at I
C
=-500mA/I
B
=-50mA
.
•
Complementary to BTN8050N3
.
Symbol
BTP8550N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
R
θJA
Tj
Tstg
Limits
-30
-20
-5
-1
225
556
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
BTP8550N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(on)
*h
FE
1
*h
FE
2
f
T
Cob
Min.
-30
-20
-5
-
-
-
-
-
100
80
-
-
Typ.
-
-
-
-
-
-
-0.18
-
-
-
150
15
Max.
-
-
-
-500
-500
-0.3
-0.4
-1
500
-
-
-
Unit
V
V
V
nA
nA
V
V
V
-
-
MHz
pF
Spec. No. : C313N3-H
Issued Date : 2003.09.26
Revised Date :
Page No. : 2/4
Test Conditions
I
C
=-50µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-20V, I
E
=0
V
EB
=-4V, I
C
=0
I
C
=-400mA, I
B
=-20mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-1V, I
C
=-150mA
V
CE
=-1V, I
C
=-150mA
V
CE
=-3V, I
C
=-800mA
V
CE
=-5V, I
C
=-50mA, f=100MHz
V
CB
=-10V, f=1MHz
*Pulse Test: Pulse Width
≤380µs,
Duty Cycle≤2%
Classification Of h
FE
1
Rank
Range
C
100~200
D
150~300
E
250~500
BTP8550N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=2V
Spec. No. : C313N3-H
Issued Date : 2003.09.26
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
VCESAT@IC=20IB
Current Gain---
HFE
100
100
0.1
1
10
100
1000
Collector Current ---IC(mA)
10
1
10
100
1000
Collector Current ---IC(mA)
Saturation Voltage vs Collector Current
1000
Cutoff Frequency---FT(GHZ)
Saturation Voltage---(mV)
1
Cutoff Frequency vs Collector Current
VBE(SAT)@IC=20IB
FT@VCE=2V
100
1
10
100
1000
Collector Current ---IC(mA)
0.1
1
10
Collector Current---IC(mA)
100
Power Derating Curve
250
Power Dissipation---PD(mW)
200
150
100
50
0
0
50
100
150
200
Ambient Temperature ---Ta(℃ )
BTP8550N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C313N3-H
Issued Date : 2003.09.26
Revised Date :
Page No. : 4/4
A
L
3
B
1
2
S
Marking:
B9
TE
V
G
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Base 2.Emitter 3.Collector
D
H
K
J
C
*: Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTP8550N3
CYStek Product Specification
NXP MCU
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