CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
Spec. No. : C853T3
Issued Date : 2004.07.14
Revised Date : 2004.09.02
Page No. : 1/5
BTN2129T3
Description
The BTN2129T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
switching application.
Features:
•High
current capability
•Low
V
CE(SAT)
•High
current gain
•Monolithic
construction with built-in base-emitter shunt resistors
Equivalent Circuit
BTN2129T3
C
B
R1≈8k
R2≈120
Outline
TO-126
B：Base
C：Collector
E：Emitter
E
BCE
BTN2129T3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=100ms
Spec. No. : C853T3
Issued Date : 2004.07.14
Revised Date : 2004.09.02
Page No. : 2/5
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd(T
A
=25℃)
Pd(T
C
=25℃)
Tj
Tstg
Limits
80
50
5
8
12
*1
1
20
150
-55~+150
Unit
V
V
V
A
W
°C
°C
Characteristics
(Ta=25°C)
Symbol
BV
CEO
I
CEO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
*V
BE(on)
1
*V
BE(on)
2
*h
FE
1
*h
FE
2
*h
FE
3
Min.
50
-
-
-
-
-
-
-
-
500
2
2
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
10
10
2
1.3
1.5
2.1
2
2.1
-
20
-
Unit
V
µA
µA
mA
V
V
V
V
V
-
K
K
Test Conditions
I
C
=1mA, I
B
=0
V
CE
=40V, I
E
=0
V
CB
=80V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=3A, I
B
=12mA
I
C
=5A, I
B
=20mA
I
C
=3A, I
B
=12mA
V
CE
=3V, I
C
=3A
V
CE
=4V, I
C
=4A
V
CE
=3V, I
C
=500mA
V
CE
=3V, I
C
=3A
V
CE
=4V, I
C
=4A
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
BTN2129T3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
10000
Saturation Voltage---(mV)
V
CE
= 3V
Current Gain---H
FE
1000
10000
V
CE(SAT)
@I
C
=250I
B
Spec. No. : C853T3
Issued Date : 2004.07.14
Revised Date : 2004.09.02
Page No. : 3/5
Saturation Voltage vs Collector Current
100
1000
10
1
1
10
100
1000
Collector Current---I
C
(mA)
10000
100
10
100
1000
10000
Collector Current---I
C
(mA)
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
Saturation Voltage---(mV)
V
CE(SAT)
@I
C
=500I
B
Saturation Voltage vs Collector Current
10000
V
CE(SAT)
@I
C
=1000I
B
1000
1000
100
10
100
1000
Collector Current---I
C
(mA)
10000
100
100
1000
Collector Current---I
C
(mA)
10000
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
Saturation Voltage---(mV)
V
BE (SAT)
@I
C
= 250I
B
10000
Saturation Voltage vs Collector Current
V
BE (SAT)
@I
C
= 500I
B
1000
1000
100
10
100
1000
Collector Current---I
C
(mA)
10000
100
10
100
1000
Collector Current---I
C
(mA)
10000
BTN2129T3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
On voltage vs Collector Current
10000
Power Dissipation---P
D
(W)
V
BE (ON)
@V
CE
= 3V
On voltage---(mV)
1.2
1
0.8
0.6
0.4
0.2
0
1
10
100
1000
10000
0
50
Spec. No. : C853T3
Issued Date : 2004.07.14
Revised Date : 2004.09.02
Page No. : 4/5
Power Derating Curve
1000
100
Collector Current---I
C
(mA)
100
150
200
Ambient Temperature---T
A
(℃)
Power Derating Curve
25
Power Dissipation---P
D
(W)
20
15
10
5
0
0
50
100
150
200
Case Temperature---T
C
(℃)
BTN2129T3
CYStek Product Specification
CYStech Electronics Corp.
TO-126 Dimension
D
A
B
1 2 3
G
C
I
Spec. No. : C853T3
Issued Date : 2004.07.14
Revised Date : 2004.09.02
Page No. : 5/5
E
J
K
M
Marking:
α
3
α
4
N2129
Style: Pin 1.Base 2.Collector 3.Emitter
F
H
L
α
1
α
2
3-Lead TO-126 Plastic Package
CYStek Package Code: T3
*: Typical
DIM
α1
α2
α3
α4
A
B
C
D
E
Inches
Min.
Max.
-
*3°
-
*3°
-
*3°
-
*3°
0.1500
0.1539
0.2752
0.2791
0.5315
0.6102
0.2854
0.3039
0.0374
0.0413
Millimeters
Min.
Max.
-
*3°
-
*3°
-
*3°
-
*3°
3.81
3.91
6.99
7.09
13.50
15.50
7.52
7.72
0.95
1.05
DIM
F
G
H
I
J
K
L
M
Inches
Min.
Max.
0.0280
0.0319
0.0480
0.0520
0.1709
0.1890
0.0950
0.1050
0.0450
0.0550
0.0450
0.0550
-
*0.0217
0.1378
0.1520
Millimeters
Min.
Max.
0.71
0.81
1.22
1.32
4.34
4.80
2.41
2.66
1.14
1.39
1.14
1.39
-
*0.55
3.50
3.86
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTN2129T3
CYStek Product Specification
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