CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C304N3
Issued Date : 2005.01.10
Revised Date :
Page No. : 1/4
BTD1768N3
Description
The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose
application.
Features
•
Low collector saturation voltage
•
High breakdown voltage, V
CEO
=80V (min.)
•
High collector current, I
C(max)
=1A (DC)
Symbol
BTD1768N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note : Pulse test, P
W
≤
10ms, Duty
≤
50%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
R
θJA
Tj
Tstg
Limits
100
80
5
1
2
(Note)
225
556
150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
BTD1768N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(SAT)
*h
FE
f
T
Cob
Min.
100
80
5
-
-
-
120
-
-
Typ.
-
-
-
-
-
0.15
-
100
20
Max.
-
-
-
1
1
0.4
560
-
-
Unit
V
V
V
µA
µA
V
-
MHz
pF
Spec. No. : C304N3
Issued Date : 2005.01.10
Revised Date :
Page No. : 2/4
Test Conditions
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=80V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=500mA, I
B
=20mA
V
CE
=3V, I
C
=100mA
V
CE
=10V, I
C
=50mA, f=100MHz
V
CB
=10V, I
E
=0A, f=1MHz
*Pulse Test: Pulse Width
≤380
µ
s, Duty Cycle≤2%
Classification Of h
FE
Rank
Range
Q
120~270
R
180~390
S
270~560
BTD1768N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=3V
Spec. No. : C304N3
Issued Date : 2005.01.10
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
Current Gain---
HFE
VBESAT@IC=20IB
100
HFE@VCE=2V
100
VCESAT@IC=20IB
10
1
10
100
1000
Collector Current---IC(mA)
10
1
10
100
1000
Collector Current---IC(mA)
On Voltage vs Collector Current
1000
Power Dissipation---PD(mW)
250
200
150
100
50
0
Power Derating Curve
On Voltage---(mV)
VBE(on)@VCE=2V
100
1
10
100
1000
Collector Current---IC(mA)
0
50
100
150
200
Ambient Temperature---TA(℃)
BTD1768N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
A
L
3
B
1
2
S
Spec. No. : C304N3
Issued Date : 2005.01.10
Revised Date :
Page No. : 4/4
Marking:
AJ
V
G
C
D
K
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Base 2.Emitter 3.Collector
H
J
*: Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD1768N3
CYStek Product Specification
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
