Patent Pending
OM100L60CMIS,
OM75L60CMIS,
OM75L60CMIB
CERMOD™ HERMETIC HIGH POWER MODULES,
THREE PHASE BRIDGE, IGBT’S
75 & 100 A, 600V Three Phase Bridge
Configuration in Ceramic to Metal
Sealed Modules
FEATURES
•
•
•
•
•
•
•
Rugged, Lightweight Hermetic Ceramic Package
NPT IGBT Technology
Soft Recovery Rectifiers
Zener Gate Protection
Short Circuit Capability
-55 C to +150 C Operating Temperature Range
Hi-Rel Screened Av i a l
albe
DESCRIPTION
C E R M O D ™ modules are isolated fully hermetic power modules which combine the latest
NPT IGBT and Soft Recovery Rectifier technology housed in a low thermal resistance
ceramic to metal sealed light weight package. This series of CERMOD™ power modules are
o
ffered in a three phase bridge configuration as Phase Leg and chopper configurations.
Designed for tough environments, these high power modules are ideally suited in motor
control, inverters, switching power supplies, in aerospace, defense, transportation and high
power industrial equipment and systems.
GENERAL CHARACTERISTICS @ 25
°
C
PART NUMBER
V CE, Vo t
ls
I AMPS
C
V CE (sat) Vo t
ls
CONFIGURATION
OM100L60CMIS
OM75L60CMIS
OM75L60CMIB
600
600
600
100
75
75
25
.
25
.
25
.
3 Phase Bridge
3 Phase Bridge
3 Phase Bridge
& Braking Transistor
9 5 R0
205 Crawford Street, Leominster, MA 01453 USA (978) 534-5776 FAX (978) 537-4246
Visit Our Web Site at www.omnirel.com
OM100L60CMIS
ELECTRICAL CHARACTERISTICS: (
Tc= 25C unless otherwise specified)
°
Characteristic
Symbol
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, V
GE
=0V
V
CES
Zero Gate Voltage Collector Current, V
GE
=0,
CE
=600V
V
I
CES
Gate Emitter Leakage Current, V
GE
=+/-15V,
CE
=0V
V
I
GES
ON CHARACTERISTICS
Gate Threshold Voltage,
GE,
I =6mA
CE
=V V
C
V
GE(TH)
Collector Emitter Saturation
GE
=15V, IC=100A V
CE(SAT)
Voltage, V
DYNAMIC CHARACTERISTICS
Fwd. Transconductance
Input Capacitance
Output Capacitance
Rev. Transfer Capacitance
Min.
600
25
2
4.5
6.0
2.0
6.5
2.5
Typ.
Max
Unit
V
µA
µA
V
V
V
CE
=5V,
C
I
=100A
V
GE
=0
V
CE
=25V
f=1.0MHz
gfs
Cies
Coes
Cres
55
4.5
0.7
1.7
S
nF
nF
nF
SWITCHING INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
Rise Time
V
CC
= 300V,
C
=100A
I
Turn-on Losses
R
V
GE
=+15/-10V,
G
=10Ω
Turn-off Delay Time
L=100µH,Tj=125
°C
Fall Time
Turn-off Losses
DIODE CHARACTERISTICS
Maximum Forward Voltage
t(on)
tr
Eon
td(off)
tf
Eoff
192
81
5.4
285
44
1.4
nS
nS
mJ
nS
nS
mJ
Reverse Recovery
Characteristics
I =100A, Tj=25
F
°C
Tj=125C
°
V
R
=300V, Tj=25
°C
F
°C
I =100A, Tj=125
dI/dt=-1080A/Tj=25
µS
°C
Tj=125C
°
Tj=25
°C
Tj=125C
°
V
F
Qrr
Irr
trr
1.4
1.5
2
3.7
51
68
124
215
1.8
1.9
V
µC
A
nS
THERMAL AND MECHANICAL CHARACTERISTICS
Thermal Resistance, Junction to Case (Per IGBT)
thJC
R
Thermal Resistance, Junction to Case (Per Diode)
thJC
R
Maximum Junction Temperature
T
jMAX
Isolation Voltage
Vis
RMS
Screw Torque
-
Mounting
Module Weight
-
15
250
0.35
°C/W
0.6
°C/W
150
°C
-
V
20
in-b
l
Grams
Rev.0
5
4/15/
99
Omnirel LLC
205 Crawford Street, Leominster, MA 01453
www.omnirel.com
(978) 534-5776 FAX (978) 537-4246
OM100L60CMIS
IGBT Collector Current vs Collector Emitter
Tj=25C
IGBT Collector Current vs Collector Emitter
Tj=+125C
120
13Vge
100
15Vge
80
60
Ic(A)
9Vge
40
20
0
0
1
2
3
Vce(V)
4
5
6
11Vge
120
13Vge
100
15Vge
80
11Vge
Ic(A)
60
9Vge
40
20
0
0
1
2
3
Vce(V)
4
5
6
IGBT Collector Current vs Collector Emitter
Tj=-55C
Switching Energy vs Collector Curren
Vce=100V,Tj=25C
120
100
80
Ic(A)
60
13Vge
15Vge
6
5
11Vge
Energy(mJ)
4
Eon
9Vge
3
Eof
40
20
0
0
1
2
Vce(V)
2
1
0
3
4
5
6
0
50
Ic(A)
100
150
Switching Energy vs Gate Resister
Switcing Energy vs Temperature Vce=300V,Ic=
7
6
Energy(mJ)
5
4
3
2
1
0
0
25
50
75
T(C)
100
125
150
Energy(mJ)
8
7
6
5
4
3
2
1
0
5
10
Vce=300V,Ic=100,Tj=25C
Eon
Eof
Eon
Eof
15
Rg(ohms)
20
25
30
35
Diode Forward Current vs. Forward Vo
Vge =0V
120
100
80
+25C
60
If(A)
40
20
0
0
0.25
0.5 0.75
1
Vf(V)
+125C
-55C
1.25 1.5
1.75
2
Rev.0
5
4/15/
99
Omnirel LLC
205 Crawford Street, Leominster, MA 01453 U
www.omnirel.com
(978) 534-5776 FAX (978) 537-4246
OM100L60CMIS
P
Gu
Gv
Gw
Eu
Ev
Ew
U
V
W
Gx
Gy
Gz
Ex
N
Ey
Ez
OM75L60CMIS
ELECTRICAL CHARACTERISTICS (Tc= 25C unless otherwise specified)
°
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, V
CE
=0V
Zero Gate Voltage Collector Current, V
GE
=0,
CE
=600V
V
Gate Emitter Leakage Current, V
GE
=+/-15V,
CE
=0V
V
ON CHARACTERISTICS
Gate Threshold Voltage,
GE,
I =6mA
CE
=V V
C
Collector Emitter Saturation
GE
=15V, IC=75A
Voltage, V
DYNAMIC CHARACTERISTICS
Fwd. Transconductance
Input Capacitance
Output Capacitance
Rev. Transfer Capacitance
Symbol
V
CES
I
CES
I
GES
V
GE(TH)
V
CE(SAT)
Min.
600
25
2
4.5
5.8
2.5
6.5
2.9
Typ.
Max
Unit
V
µA
µA
V
V
V
CE
=5V,
C
I
=75A
V
GE
=0
V
CE
=25V
f=1.0MHz
gfs
C
IES
C
OES
C
RES
36
3.7
1.1
1.9
S
nF
nF
nF
SWITCHING INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
Rise Time
V
CC
= 300V,
C
=75A
I
Turn-on Losses
V
GE
=+15/-10V,
G
=10Ω
R
Turn-off Delay Time
L=100µH,Tj=125
°C
Fall Time
Turn-off Losses
DIODE CHARACTERISTICS
Maximum Forward Voltage
t(on)
tr
Eon
td(off)
tf
Eoff
60
65
90
80
nS
nS
mJ
nS
nS
mJ
Reverse Recovery
Characteristics
F
°C
I =75A, Tj=25
Tj=125C
°
V
R
=300V, Tj=25
°C
I =75A, Tj=125
F
°C
dI/dt=-1200A/Tj=25
µS
°C
Tj=125C
°
Tj=25
°C
Tj=125C
°
V
F
Qrr
Irr
trr
1.4
4
6.5
40
85
2.0
V
µC
A
nS
THERMAL AND MECHANICAL CHARACTERISTICS
Thermal Resistance, Junction to Case (Per IGBT)
thJC
R
Thermal Resistance, Junction to Case (Per Diode)
thJC
R
Maximum Junction Temperature
T
jMAX
Isolation Voltage
Vis
RMS
Screw Torque
-
Mounting
Module Weight
-
15
250
0.45
°C/W
0.8
°C/W
150
°C
-
V
20
in-b
l
Grams
Rev.02
4/22/99
Omnirel LLC
205 Crawford Street,
www.omnirel.com
(978) 534-5776 FAX (978) 537-4246
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